公开(公告)号：US07781230B2

公开(公告)日：2010-08-24

申请号：US11683580

申请日：2007-03-08

申请人： Akihiro Odagawa ,  Yoshihisa Nagano

发明人： Akihiro Odagawa ,  Yoshihisa Nagano

IPC分类号： B23B9/00

CPC分类号： C23C28/048 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/36 ,  G11C13/0007 ,  H01L27/101

摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.

摘要翻译： 提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。 电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。 电阻元件包括基板和设置在基板上的多层结构，多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 O 3和Fe 3 O 4 含有0重量％至20重量％的Fe 2 O 3的量，下电极由具有与电阻层不同的组成并含有Fe 3 O 4的氧化铁制成，并且电阻层和下电极 互相接触。

公开(公告)号：US07446256B2

公开(公告)日：2008-11-04

申请号：US11643708

申请日：2006-12-22

申请人： Tsutomu Kanno ,  Akihiro Sakai ,  Akihiro Odagawa ,  Satoshi Okada ,  Hideaki Adachi

发明人： Tsutomu Kanno ,  Akihiro Sakai ,  Akihiro Odagawa ,  Satoshi Okada ,  Hideaki Adachi

IPC分类号： H01L35/12

CPC分类号： H01L35/22 ,  C01G51/006 ,  C01G51/66 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2002/78 ,  C01P2004/41 ,  C01P2004/62 ,  C01P2006/40

摘要： A thermoelectric conversion device of the present invention includes a first electrode, a second electrode, and a layered oxide arranged between the first electrode and the second electrode. The first electrode, the layered oxide, and the second electrode are arranged in this order so that a multilayer is formed. The layered oxide is formed of electric conductive layers and electric insulating layers being alternately arranged. The C axis of the layered oxide is perpendicular to the interface between the first electrode and the layered oxide. The area of the second electrode is smaller than that of the first electrode.

摘要翻译： 本发明的热电转换装置包括第一电极，第二电极和布置在第一电极和第二电极之间的层状氧化物。 第一电极，层状氧化物和第二电极按此顺序排列，从而形成多层。 层状氧化物由导电层和交替布置的电绝缘层形成。 层状氧化物的C轴垂直于第一电极和层状氧化物之间的界面。 第二电极的面积小于第一电极的面积。

公开(公告)号：US20070240995A1

公开(公告)日：2007-10-18

申请号：US11683580

申请日：2007-03-08

申请人： Akihiro ODAGAWA ,  Yoshihisa Nagano

发明人： Akihiro ODAGAWA ,  Yoshihisa Nagano

IPC分类号： B32B9/00 ,  C23C28/00 ,  B32B19/00

CPC分类号： C23C28/048 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/36 ,  G11C13/0007 ,  H01L27/101

摘要： An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.

摘要翻译： 提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。 电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。 电阻元件包括基板和布置在基板上的多层结构，该多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 <3 O 3，Fe 3 O 4含有0〜20％的Fe 2 O 3 下部电极由与电阻层不同的组成的氧化铁制成，并含有Fe 3 O 3， SUB> 4 <！ - SIPO - >电极层和下电极彼此接触。

公开(公告)号：US07067205B2

公开(公告)日：2006-06-27

申请号：US10730096

申请日：2003-12-09

申请人： Hideaki Adachi ,  Akihiro Odagawa

发明人： Hideaki Adachi ,  Akihiro Odagawa

IPC分类号： B32B18/00

CPC分类号： H01L35/22 ,  H01L35/34 ,  Y10T428/12528

摘要： A thermoelectric transducing material according to this invention includes a layered cobaltite based substance represented by the chemical formula AxCoO2, wherein A consists of an element or element group selected from alkali metal elements and alkali earth group elements and is compositionally modulated in a thickness-wise direction of layers in a structure of the layered cobaltite based substance.

摘要翻译： 根据本发明的热电转换材料包括由化学式A CoO 2 2表示的层状钴酸盐基物质，其中A由选自碱金属的元素或元素组成 金属元素和碱土金属元素，并且在层状钴酸盐基物质的结构中沿层的厚度方向组成调制。

公开(公告)号：US20060120205A1

公开(公告)日：2006-06-08

申请号：US11326520

申请日：2006-01-06

申请人： Akihiro Odagawa ,  Yasunari Sugita ,  Tsutomu Kanno ,  Akihiro Sakai ,  Hideaki Adachi

发明人： Akihiro Odagawa ,  Yasunari Sugita ,  Tsutomu Kanno ,  Akihiro Sakai ,  Hideaki Adachi

IPC分类号： G11C8/02

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/79 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675 ,  H01L45/1683

摘要： An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.

摘要翻译： 提供了具有与常规元件不同的构造并且显示出优异的电阻变化特性的电阻元件。 电阻元件具有两个或多个电阻值不同的状态，并且可以通过施加预定的电压或电流从两个或更多个状态之一切换到另一个状态。 电阻元件包括：多层结构，其包括上电极，下电极和夹在电极之间的电阻层，所述多层结构设置在基板上; 其中所述电阻层具有尖晶石结构，并且所述下电极的面向所述电阻层的表面被氧化。 电阻元件可以通过在400℃以下的制造工艺制造。

公开(公告)号：US06943041B2

公开(公告)日：2005-09-13

申请号：US10719412

申请日：2003-11-21

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.

摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。

公开(公告)号：US06778427B2

公开(公告)日：2004-08-17

申请号：US10250319

申请日：2003-06-26

申请人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

发明人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

IPC分类号： G11C1114

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistve memory device includes a magnetoresistive element and a wiring for applying a magnetic field to the magnetoresistive element. The wiring includes two or more conductive wires that extend in the same direction. A plurality of conductive wires is used to apply a magnetic field to a single magnetoresistive element, thereby achieving high-speed response and suppressing crosstalk.

摘要翻译： 磁阻存储器件包括磁阻元件和用于向磁阻元件施加磁场的布线。 布线包括沿相同方向延伸的两根或多根导线。 使用多根导线将磁场施加到单个磁阻元件，从而实现高速响应并抑制串扰。

公开(公告)号：US06590268B2

公开(公告)日：2003-07-08

申请号：US09803571

申请日：2001-03-09

申请人： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

发明人： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

IPC分类号： H01L4300

CPC分类号： G11C11/16

摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

摘要翻译： 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。

公开(公告)号：US06147360A

公开(公告)日：2000-11-14

申请号：US82761

申请日：1998-05-21

申请人： Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

发明人： Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

IPC分类号： H01L39/22 ,  H01L29/06

CPC分类号： H01L39/225

摘要： This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.

摘要翻译： 本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。 在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。 然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。 因此，在凸部形成有晶界部。 漏极电极和源极电极彼此面对地形成，晶界部分在其间。

公开(公告)号：US20110094823A1

公开(公告)日：2011-04-28

申请号：US12980960

申请日：2010-12-29

申请人： Akihiro ODAGAWA

发明人： Akihiro ODAGAWA

IPC分类号： G10K15/04 ,  B05D3/02

CPC分类号： H04R23/002

摘要： A sound wave generator that exhibits more excellent output properties than conventional ones, based on the combination of a base layer and a heat-insulating layer that cannot be expected from conventional techniques is provided. The sound wave generator includes a base layer; a heat-insulating layer disposed on the base layer; and a heat pulse source that applies heat pulses to the heat-insulating layer. The base layer is composed of graphite or sapphire, and the heat-insulating layer is composed of crystalline fine particles containing silicon or germanium. The heat pulse source, for example, is a heat pulse-generating layer that is disposed on the surface of the heat-insulating layer opposite to the base layer and applies heat pulses to the heat-insulating layer.

摘要翻译： 提供了基于传统技术中不能期望的基础层和绝热层的组合，表现出比传统的更好的输出性能的声波发生器。 所述声波发生器包括基底层; 设置在所述基底层上的绝热层; 以及向绝热层施加热脉冲的热脉冲源。 基层由石墨或蓝宝石构成，隔热层由含有硅或锗的结晶微粒构成。 例如，热脉冲源是设置在与基底层相反的绝热层的表面上的热脉冲发生层，并且对隔热层施加热脉冲。