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62 条记录 (耗时 0.026 秒)

    Semiconductor memory device
    51.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US6002621A

    公开(公告)日：1999-12-14

    申请号：US33657

    申请日：1998-03-03

    申请人： Shinji Tanaka ,  Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

    发明人： Shinji Tanaka ,  Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

    IPC分类号： G11C29/24 ,  G11C7/00

    CPC分类号： G11C29/24

    摘要： Normal column selection signal switching device (20) is provided to switch a signal outputted from normal column selection signal generating device (19) in response to a test-mode signal (TMC1). Even if the normal column selection signal generating device (19) outputs a signal to disable a normal column decoder (3), the normal column selection signal switching device (20) switches the signal to enable the normal column decoder (3) to operate in the test operation. Having this configuration, a semiconductor memory device enables writing of data into all the normal memory cells even after some of the normal memory cells are replaced by spare memory cells.

    摘要翻译： 提供正常列选择信号切换装置（20）以响应于测试模式信号（TMC1）切换从正常列选择信号发生装置（19）输出的信号。 即使正常列选择信号生成装置（19）输出禁止通常的列解码器（3）的信号，通常的列选择信号切换装置（20）切换信号，使通常的列解码器（3）能够工作 测试操作。 具有这种配置，半导体存储器件即使在由备用存储器单元代替一些正常存储器单元之后，也能够将数据写入所有正常存储单元。

    Guide wire having tubular connector with helical slits
    52.
    发明授权
    Guide wire having tubular connector with helical slits 失效
    导丝具有带螺旋狭缝的管状连接器

    公开(公告)号：US6001068A

    公开(公告)日：1999-12-14

    申请号：US967328

    申请日：1997-10-21

    申请人： Syunichi Uchino ,  Kenichi Yasuda

    发明人： Syunichi Uchino ,  Kenichi Yasuda

    IPC分类号： A61B5/00 ,  A61M25/01 ,  A61M25/09

    CPC分类号： A61M25/0905 ,  A61M25/09 ,  A61M2025/09091 ,  A61M2025/0915

    摘要： A guide wire includes a first wire located at the distal end of the guide wire, a second wire located at the proximal end of the guide wire and having a flexural rigidity greater than that of the first wire, and a tubular connector for joining the first and second wires. The connector has one or more grooves or slits formed on the distal side of the boundary between the first wire and the second wire. The connector is formed of a material different from the material of the first wire. The proximal portion of the first wire is provided with a thin metal coating. The first wire is joined to the connector by brazing at the portion provided with the thin metal coating.

    摘要翻译： 引导线包括位于引导线的远端的第一线，位于导丝的近端的第二线，其弯曲刚度大于第一线的弯曲刚度;以及管状连接器，用于连接第一线 和第二根线。 连接器具有形成在第一线和第二线之间的边界的远侧上的一个或多个槽或狭缝。 连接器由与第一线材料不同的材料形成。 第一线的近端部分设置有薄金属涂层。 第一线通过在设置有薄金属涂层的部分处钎焊而连接到连接器。

    Semiconductor memory device
    54.
    发明授权
    Semiconductor memory device 失效

    公开(公告)号：US5781484A

    公开(公告)日：1998-07-14

    申请号：US852643

    申请日：1997-05-07

    申请人： Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

    发明人： Koji Tanaka ,  Mikio Asakura ,  Kenichi Yasuda

    IPC分类号： G11C29/00 ,  G11C29/24 ,  G11C7/00

    CPC分类号： G11C29/70 ,  G11C29/24

    摘要： Normal column selection signal switching device (20) is provided to switch a signal outputted from normal column selection signal generating device (19) in response to a test-mode signal (TMC1). Even if the normal column selection signal generating device (19) outputs a signal to disable a normal column decoder (3), the normal column selection signal switching device (20) switches the signal to enable the normal column decoder (3) to operate in the test operation. Having this configuration, a semiconductor memory device enables writing of data into all the normal memory cells even after some of the normal memory cells are replaced by spare memory cells.

    Electrophotographic photoreceptor
    55.
    发明授权
    Electrophotographic photoreceptor 失效
    电子照相感光体

    公开(公告)号：US5716745A

    公开(公告)日：1998-02-10

    申请号：US720857

    申请日：1996-10-03

    申请人： Hiroaki Minemura ,  Kenichi Yasuda ,  Yohko Kitahara ,  Eiichi Sakai

    发明人： Hiroaki Minemura ,  Kenichi Yasuda ,  Yohko Kitahara ,  Eiichi Sakai

    IPC分类号： G03G5/047 ,  G03G5/14

    CPC分类号： G03G5/142 ,  G03G5/144 ,  G03G5/047

    摘要： An electrophotographic photoreceptor is disclosed. The photoreceptor has an interlayer and a photosensitive layer provided on a conductive support, in which the interlayer comprising: an alkoxy metallic chelate compound of titanium or aluminum having a chelate group of acetoacetic ester or .beta.-diketone; and a silane coupling reagent having an organic functional group, the end of which is methacryloxy or amino group. A method of forming an electrophotographic image is also disclosed.

    摘要翻译： 公开了一种电子照相感光体。 感光体具有设置在导电性支持体上的中间层和感光层，其中中间层包含：具有乙酰乙酸酯或β-二酮螯合基团的钛或铝的烷氧基金属螯合物; 和具有有机官能团的硅烷偶联剂，其末端是甲基丙烯酰氧基或氨基。 还公开了形成电子照相图像的方法。

    Dynamic random access memory with isolated well structure
    56.
    再颁专利
    Dynamic random access memory with isolated well structure 失效
    具有隔离井结构的动态随机存取存储器

    公开(公告)号：USRE35613E

    公开(公告)日：1997-09-23

    申请号：US496569

    申请日：1995-06-29

    申请人： Kenichi Yasuda ,  Makoto Suwa ,  Shigeru Mori

    发明人： Kenichi Yasuda ,  Makoto Suwa ,  Shigeru Mori

    IPC分类号： H01L27/02 ,  H01L27/105 ,  H01L27/108

    CPC分类号： H01L27/10805 ,  H01L27/0218 ,  H01L27/105

    摘要： A semiconductor memory device includes a first conductivity type well in a first conductivity type semiconductor substrate surrounded by a second conductivity type well, one of a memory cell and an external input circuit arranged on the first conductivity type well and the other disposed outside the second conductivity type well. A predetermined power supply voltage is applied to the second conductivity type well and the first conductivity type well is connected to ground. In the structure, charge carriers injected from the external input circuit are absorbed in the second conductivity type well. As a result, the charge carriers are prevented from reaching the memory cell and destroying data stored therein. Therefore, it is possible to miniaturize transistors and increase integration density of dynamic random access memory devices without degrading the source to drain dielectric strength.

    摘要翻译： 半导体存储器件包括第一导电类型的半导体衬底中的第一导电类型的阱，该第一导电类型的半导体衬底由第二导电类型阱围绕，存储单元和布置在第一导电类型阱上的外部输入电路之一，另一个位于第二导电类型 类型很好。 对第二导电类型阱施加预定的电源电压，并且将第一导电类型阱连接到地。 在该结构中，从外部输入电路注入的电荷载流子被吸收在第二导电型阱中。 结果，防止电荷载体到达存储单元并破坏其中存储的数据。 因此，可以使晶体管小型化并提高动态随机存取存储器件的集成密度，而不会使源极降低介电强度。

    Tandem mill system and work roll crossing mill
    57.
    发明授权
    Tandem mill system and work roll crossing mill 失效
    串列轧机系统和工作轧辊交叉磨

    公开(公告)号：US5657655A

    公开(公告)日：1997-08-19

    申请号：US711999

    申请日：1996-09-10

    申请人： Kenichi Yasuda ,  Kenjiro Narita ,  Yukio Hirama ,  Kouji Satou ,  Yasutsuga Yoshimura ,  Yoshio Takakura ,  Shinichi Kaga

    发明人： Kenichi Yasuda ,  Kenjiro Narita ,  Yukio Hirama ,  Kouji Satou ,  Yasutsuga Yoshimura ,  Yoshio Takakura ,  Shinichi Kaga

    IPC分类号： B21B13/00 ,  B21B1/24 ,  B21B1/26 ,  B21B1/28 ,  B21B13/02 ,  B21B13/14 ,  B21B27/10 ,  B21B37/00 ,  B21B37/28 ,  B21B37/32 ,  B21B37/38 ,  B21B37/42 ,  B21B1/22 ,  B21B27/06

    CPC分类号： B21B13/023 ,  B21B1/24 ,  B21B37/32 ,  B21B37/42 ,  B21B1/26 ,  B21B1/28

    摘要： In a tandem mill system, at least one first type rolling mill is arranged in the upstream side and at least one second type rolling mill is arranged in the downstream side. The first type rolling mill is of the so-called work roll crossing mill in which a pair of work rolls are inclined with respect to a pair of back-up rolls supporting the work rolls and simultaneously crossed each other in a horizontal plane to control transverse thickness distribution of a strip. The second type rolling mill is of the so-called HC mill which controls the strip crown and shape by a combination of axial movement of intermediate rolls and work roll bending. Such an arrangement makes it possible to increase a capability of controlling the strip crown and shape, particularly, a capability of correcting the quarter buckle, and eliminate a fear of causing scratches on the strip and roll surfaces, with the result of improved production efficiency. Plural lines of lubricant supply device are also provided to stop supply of a lubricant immediately before biting of the strip into the work roll crossing mill and start the supply again after the biting. A system of lubricating the work roll crossing mill is thereby improved.

    摘要翻译： 在串列式轧机系统中，至少一个第一类型的轧机设置在上游侧，并且至少一个第二类轧机设置在下游侧。 第一类轧机是所谓的工作轧辊交叉磨，其中一对工作辊相对于支撑工作辊的一对支承辊倾斜，同时在水平面上彼此交叉以控制横向 条的厚度分布。 第二型轧机是所谓的HC轧机，通过中间轧辊的轴向运动和工作辊的弯曲来组合控制带材的中心和形状。 这样的布置使得可以增加控制带材凸厚和形状的能力，特别是修正四分之一带扣的能力，并且消除了在带材和辊表面上产生划痕的担心，结果提高了生产效率。 还提供多条润滑剂供应装置，以便在将带材咬入工作辊交叉磨机之前立即停止供应润滑剂，并在咬合后重新开始供应。 从而提高了工作辊交叉磨机的润滑系统。

    Rolling mill and method
    58.
    发明授权
    Rolling mill and method 失效
    轧机和方法

    公开(公告)号：US5560237A

    公开(公告)日：1996-10-01

    申请号：US230344

    申请日：1994-04-20

    申请人： Kenichi Yasuda ,  Yukio Hirama ,  Kenjiro Narita ,  Koji Satou ,  Yoshio Takakura ,  Hiroyuki Shiraiwa

    发明人： Kenichi Yasuda ,  Yukio Hirama ,  Kenjiro Narita ,  Koji Satou ,  Yoshio Takakura ,  Hiroyuki Shiraiwa

    IPC分类号： B21B13/14 ,  B21B37/00 ,  B21B37/18 ,  B21B37/38 ,  B21B37/08

    CPC分类号： B21B13/145

    摘要： To eliminate a vertically asymmetrical deflection, a rolling mill comprises a device for measuring horizontal deflections of upper and lower work rolls 2, 3 during rolling, a device for comparing values measured on the upper and lower sides and calculating the difference therebetween, and a horizontal deflection controller four determining whether the difference exceeds a predetermined range or not and imparting a horizontal bending to at least one of the work rolls. To eliminate a transversely asymmetrical deflection, a rolling mill comprises a device for measuring horizontal deflections of at least one of the work rolls at axially spaced positions during rolling, a device for comparing values measured on at the axially spaced positions and calculating the difference therebetween, and a horizontal deflection controller for determining whether the difference exceeds a predetermined range or not and imparting a horizontal bending to the one work roll at least one of the axially spaced positions. This prevents an adverse effect by the work rolls being horizontally deflected in a vertically or transversely asymmetrical way, reduces the diameter of the work rolls, and increases the allowable rolling load. Stable rolling of high-quality strips with good shape or flatness is thus achieved.

    摘要翻译： 为了消除垂直不对称偏转，轧机包括用于在轧制期间测量上下工作辊2,3的水平偏转的装置，用于比较在上侧和下侧测量的值并计算它们之间的差的装置，以及水平 偏转控制器4确定差异是否超过预定范围，并且对至少一个工作辊施加水平弯曲。 为了消除横向不对称偏转，轧机包括用于在轧制期间轴向间隔位置测量至少一个工作辊的水平偏转的装置，用于比较在轴向间隔位置处测量的值并计算它们之间的差异的装置， 以及水平偏转控制器，用于确定所述差异是否超过预定范围，并且对所述一个工作辊施加至少一个所述轴向间隔位置的水平弯曲。 这样可以防止工作辊以垂直或横向不对称的方式水平偏转的不利影响，减小了工作辊的直径，并增加了允许的轧制负载。 因此实现了具有良好形状或平坦度的高质量条的稳定轧制。

    Output buffer circuits including voltage compensation
    59.
    发明授权
    Output buffer circuits including voltage compensation 失效
    输出缓冲电路包括电压补偿

    公开(公告)号：US5382847A

    公开(公告)日：1995-01-17

    申请号：US22647

    申请日：1993-02-25

    申请人： Kenichi Yasuda

    发明人： Kenichi Yasuda

    IPC分类号： H03K17/16 ,  H03K17/695 ,  H03K19/0175 ,  H03K19/003

    CPC分类号： H03K17/164 ,  H03K17/167

    摘要： Disclosed is an output buffer circuit for allowing a reduction in overshoot and undershoot without a decrease in output speed of an output signal. This output buffer circuit includes a PMOS transistor and an NMOS transistor complementarily connected to each other, an impedance increasing circuit connected in parallel to PMOS transistor, and an impedance increasing circuit connected in parallel to NMOS transistor. Impedance increasing circuit increases output impedance in accordance with an increase in voltage on an output node of a CMOS circuit. Impedance increasing circuit increases output impedance in accordance with a decrease in voltage on output node of the CMOS circuit.

    摘要翻译： 公开了一种用于允许在不输出信号的输出速度降低的情况下减小过冲和下冲的输出缓冲电路。 该输出缓冲器电路包括彼此互补连接的PMOS晶体管和NMOS晶体管，与PMOS晶体管并联连接的阻抗增加电路以及与NMOS晶体管并联连接的阻抗增加电路。 阻抗增加电路根据CMOS电路的输出节点上的电压的增加而增加输出阻抗。 阻抗增加电路根据CMOS电路输出节点上的电压降低而增加输出阻抗。