摘要:
An data recording device according to an aspect of the present invention includes a memory cell array in a memory chip, a refresh circuit which executes a refreshing of the memory cell array, a refresh control circuit which executes refreshing at a time interval which is shorter than a data hold time and manages a data hold time, and an internal power source which supplies a power source electric potential to the refresh circuit and the refresh control circuit in a state in which the data recording device is removed from an external device.
摘要:
A magnetic recording element includes a first fixed layer having a first and second face and having a magnetization direction fixed in a direction penetrating the first and second face. A free layer has a third and fourth face, a magnetization easy and hard axis both extending along the third or fourth face, and a magnetization direction which changes according to a direction of a current flowing through the first and fourth face with a magnetic field applied in a fixed direction or according to a direction of a magnetic field applied to the free layer with a current flowing through the first and fourth face in a fixed direction. A nonmagnetic first intermediate layer is provided between the second and third face. A magnetic field generating layer applies a magnetic field smaller than the anisotropy field of the free layer to the free layer along the magnetization hard axis.
摘要:
A magnetic material has a composition expressed by the following general formula, general formula: {(R1XR21−X)YBZT1−Y−Z}1−QNQ (where, R1 is at least one kind of element selected from rare earth elements, R2 is at least one kind of element selected from Zr, Hf, Ti and Sc, T is at least one kind of element selected from Fe and Co, and X, Y, Z and Q designate numerical values satisfying 0.5≦X
摘要翻译:磁性材料具有由以下通式表示的组成(其中,R 1为选自稀土元素中的至少一种元素,R 2为选自Zr,Hf,Ti和Sc中的至少一种元素,T为 选自Fe和Co中的至少一种元素,X,Y,Z和Q表示满足0.5 <= X <1,0.05 <= Y <= 0.2,0 <= Z <= 0.1和0.1 < Q <= 0.2),并且包括5体积%以上的Th2Ni17结晶相。 磁性材料的再结晶组织的平均粒径在0.02〜50μm的范围内,磁性优异。 通过对主相为Th2Ni17结晶相的母合金进行HDDR处理,可以得到这样的磁性材料。
摘要:
A permanent magnet material has a principal phase of TbCu7 type crystal structure and improved magnetic properties. This permanent magnet material is represented by the general formula: R1.sub.x R2.sub.y B.sub.z N.sub.u M.sub.100-x-y-z-u, wherein R1 is at least one rare earth element including Y, R2 is at least one element selected from the group consisting of Zr, Hf and Sc, M is at least one element selected from Fe and Co, x, y, z and u are atomic percents individually defined as x.gtoreq.2, y.gtoreq.0.01, 4.ltoreq.x+y.ltoreq.20, 0.ltoreq.z.ltoreq.10, and 0
摘要翻译:永磁材料具有TbCu7型晶体结构的主相和磁性能的改善。 该永磁材料由以下通式表示:R1xR2yBzNuM100-xyzu,其中R1是至少一种包括Y的稀土元素,R2是选自Zr,Hf和Sc中的至少一种元素,M是至少一种 选自Fe和Co的元素,x,y,z和u是原子百分比,分别定义为x> / = 2,y> / = 0.01,4 = x + y = 20,0 < / = 10,0
摘要:
An information display device includes a display, a detector for detecting an environmental variation around a place at which the device is mounted, and a detector for detecting date and time information, in which an image to be displayed on the display is varied on the basis of the detected environment variation information and/or the date and time information.
摘要:
There is disclosed a method of introducing magnetic anisotropy into a magnetic material, in which a laser beam is selectively radiated on the surface of a magnetic material to locally heat it, thereby forming a pattern of boundary phases for magnetically dividing a main phase of the magnetic material into a plurality of regions, and magnetic domains of the divided main phase regions are controlled to induce magnetic anisotropy in the main phase regions.
摘要:
A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.
摘要:
A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.
摘要:
It is made possible to improve a recording density by leaps and bounds. An information recording and reproducing apparatus includes: a control portion including a record-erase circuit which causes electrons to be emitted from the electron emission end to a recording portion on a recording medium by applying a first voltage to the first electrode in a state in which a second voltage is applied to the second electrode at time of information recording or erasing, and a reproducing circuit which causes a reproducing current to flow from the electron emission end to the recording portion on the recording medium by applying a third voltage which is lower than the first voltage to the first electrode in a state in which the second voltage is applied to the second electrode at time of reproducing, the control portion detecting an electric resistance change caused by a change in a recording state in the recording portion.
摘要:
A motion reduced floating structure includes a main hull structure and a wave damping structure connected with the main hull structure. The wave damping structure may include a back board, a lower horizontal board and vertical members. The back board is connected with the main hull structure, and the lower horizontal board is connected with a lower portion of the back board to extend in a horizontal direction and is under a seawater surface in case of mooring. The vertical members are connected with the lower horizontal board and the back board. A vertical direction hole is provided for the lower horizontal board.