公开(公告)号：US20120217461A1

公开(公告)日：2012-08-30

申请号：US13404795

申请日：2012-02-24

申请人： Shigeki KOBAYASHI ,  Takashi Shigeoka ,  Mitsuru Sato ,  Takahiro Hirai ,  Katsuyuki Sekine ,  Kazuya Kinoshita ,  Soichi Yamazaki ,  Ryota Fujitsuka ,  Kensuke Takahashi ,  Yasuhiro Nojiri ,  Masaki Yamato ,  Hiroyuki Fukumizu ,  Takeshi Yamaguchi

发明人： Shigeki KOBAYASHI ,  Takashi Shigeoka ,  Mitsuru Sato ,  Takahiro Hirai ,  Katsuyuki Sekine ,  Kazuya Kinoshita ,  Soichi Yamazaki ,  Ryota Fujitsuka ,  Kensuke Takahashi ,  Yasuhiro Nojiri ,  Masaki Yamato ,  Hiroyuki Fukumizu ,  Takeshi Yamaguchi

IPC分类号： H01L45/00 ,  H01L21/8239 ,  B82Y99/00

CPC分类号： H01L27/2409 ,  B82Y10/00 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608

摘要： A semiconductor memory device according to an embodiment includes: first lines provided on a substrate; second lines provided between the first lines and the substrate so as to intersect the first lines; and a first memory cell array including first memory cells, each of the first memory cells being provided at respective intersections of the first lines and the second lines and including a current rectifying element and a variable resistor connected in series. The variable resistor of the first memory cell includes a first recording layer and a second recording layer, the first recording layer being made of an oxide of a first metal material, the second recording layer being made of the first metal material and being formed so as to contact with the first recording layer. The second recording layer is closer to the first line than the first recording layer is.

摘要翻译： 根据实施例的半导体存储器件包括：设置在基板上的第一线; 设置在第一线和基板之间以与第一线相交的第二线; 以及包括第一存储单元的第一存储单元阵列，每个第一存储单元设置在第一行和第二行的相应交点处，并且包括串联连接的电流整流元件和可变电阻器。 第一存储单元的可变电阻器包括第一记录层和第二记录层，第一记录层由第一金属材料的氧化物制成，第二记录层由第一金属材料制成并形成为 与第一记录层接触。 第二记录层比第一记录层更靠近第一行。

公开(公告)号：US20110026294A1

公开(公告)日：2011-02-03

申请号：US12886040

申请日：2010-09-20

申请人： Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Chikayoshi Kamata ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Chikayoshi Kamata ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： G11C5/06 ,  H01L45/00

CPC分类号： G11B9/04 ,  B82Y10/00 ,  G11B9/149 ,  G11B11/002 ,  G11B11/08 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/0483 ,  G11C2211/565 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1675

摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.

摘要翻译： 根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。 记录层设置在第一层和第二层之间，并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。 第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。 电阻率分布层包括低电阻率部分和高电阻率部分。 高电阻率部分的电阻率高于低电阻率部分的电阻率。 低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。

公开(公告)号：US08089796B2

公开(公告)日：2012-01-03

申请号：US12886040

申请日：2010-09-20

申请人： Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Chikayoshi Kamata ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Chikayoshi Kamata ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： G11C5/06

CPC分类号： G11B9/04 ,  B82Y10/00 ,  G11B9/149 ,  G11B11/002 ,  G11B11/08 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/0483 ,  G11C2211/565 ,  G11C2213/32 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1675

摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first and second layers and is capable of reversibly transitioning between a first state and a second state with a resistance higher than in the first state. One of the first and second layers includes a resistivity distribution layer perpendicular to a stacking direction of the first and second layers, and the recording layer. The resistivity distribution layer includes a low and a high resistivity portion. Resistivity of the high resistivity portion is higher than resistivity of the low resistivity portion. The low resistivity portion contains a transition element identical to a transition element contained in the high resistivity portion.

摘要翻译： 根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。 记录层设置在第一层和第二层之间，并且能够以比第一状态高的电阻在第一状态和第二状态之间可逆地转换。 第一层和第二层之一包括垂直于第一层和第二层的层叠方向的电阻率分布层和记录层。 电阻率分布层包括低电阻率部分和高电阻率部分。 高电阻率部分的电阻率高于低电阻率部分的电阻率。 低电阻率部分包含与包含在高电阻率部分中的过渡元素相同的过渡元件。

公开(公告)号：US08288748B2

公开(公告)日：2012-10-16

申请号：US12889558

申请日：2010-09-24

申请人： Takayuki Tsukamoto ,  Chikayoshi Kamata ,  Takeshi Yamaguchi ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Takayuki Tsukamoto ,  Chikayoshi Kamata ,  Takeshi Yamaguchi ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： H01L29/02

CPC分类号： G11C13/0009 ,  G11C13/00 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.

摘要翻译： 根据一个实施例，信息记录和再现装置包括第一层和第二层之间的第一层，第二层和记录层，其能够在低电阻的第一状态和第二层之间的转变 通过在第一和第二层之间流动电流而产生高电阻。 记录层的周边部分具有与记录层的中心部分不同的组成。 中心部分包​​括两种阳离子元件。 并且中心部分以两种阳离子元素的比例与周边部分不同。

公开(公告)号：US08431920B2

公开(公告)日：2013-04-30

申请号：US12884880

申请日：2010-09-17

申请人： Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： H01L47/00

CPC分类号： G11B11/002 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  G11B11/08 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/0483 ,  G11C2211/565 ,  G11C2213/31 ,  G11C2213/53 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79

摘要： According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the second region is higher than that in the first region.

摘要翻译： 根据一个实施例，信息记录和再现装置包括记录层，其包括典型元件和过渡元件，并且将第一电阻率的状态和与第一电阻率不同的第二电阻率的状态存储在 典型元件的移动，以及设置在记录层的一端以向记录层施加电压或电流的电极层。 记录层包括与电极层接触的第一区域，电极层包括与记录层接触的第二区域。 第一和第二区域彼此相对。 并且第一和第二区域包括典型元件，并且第二区域中的典型元件的浓度高于第一区域中的典型元件的浓度。

公开(公告)号：US20110062407A1

公开(公告)日：2011-03-17

申请号：US12884880

申请日：2010-09-17

申请人： Chikayoshi KAMATA ,  Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Chikayoshi KAMATA ,  Takayuki Tsukamoto ,  Takeshi Yamaguchi ,  Tsukasa Nakai ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： H01L47/00

CPC分类号： G11B11/002 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  G11B11/08 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/0483 ,  G11C2211/565 ,  G11C2213/31 ,  G11C2213/53 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79

摘要： According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region.

摘要翻译： 根据一个实施例，信息记录和再现装置包括记录层，其包括典型元件和过渡元件，并且将第一电阻率的状态和与第一电阻率不同的第二电阻率的状态存储在 典型元件的移动，以及设置在记录层的一端以向记录层施加电压或电流的电极层。 记录层包括与电极层接触的第一区域，电极层包括与记录层接触的第二区域。 第一和第二区域彼此相对。 并且第一和第二区域包括典型的元件，并且第一区域中的典型元件的浓度高于第二区域中的典型元素的浓度。

公开(公告)号：US20110062405A1

公开(公告)日：2011-03-17

申请号：US12889558

申请日：2010-09-24

申请人： Takayuki Tsukamoto ,  Chikayoshi Kamata ,  Takeshi Yamaguchi ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

发明人： Takayuki Tsukamoto ,  Chikayoshi Kamata ,  Takeshi Yamaguchi ,  Takahiro Hirai ,  Shinya Aoki ,  Kohichi Kubo

IPC分类号： H01L45/00

CPC分类号： G11C13/0009 ,  G11C13/00 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements.

摘要翻译： 根据一个实施例，一种信息记录和再现装置包括第一层和第二层之间的第一层，第二层和记录层，其能够在低电阻的第一状态和第二层之间的转变 通过在第一和第二层之间流动电流而产生高电阻。 记录层的周边部分具有与记录层的中心部分不同的组成。 中心部分包​​括两种阳离子元件。 并且中心部分以两种阳离子元素的比例与周边部分不同。

公开(公告)号：US07995382B2

公开(公告)日：2011-08-09

申请号：US12636646

申请日：2009-12-11

申请人： Takayuki Tsukamoto ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Takahiro Hirai ,  Shinya Aoki ,  Toshiro Hiraoka

发明人： Takayuki Tsukamoto ,  Kohichi Kubo ,  Chikayoshi Kamata ,  Takahiro Hirai ,  Shinya Aoki ,  Toshiro Hiraoka

IPC分类号： G11C11/00

CPC分类号： H01L45/147 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/3427 ,  G11C2213/53 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/1625

摘要： An information recording and reproducing apparatus, includes: a recording layer including a first layer including a first compound, the first compound being a conjugated compound including at least two types of cation elements, at least one selected from the cation elements being a transition element having a d orbit incompletely filled by electrons, a shortest distance between adjacent cation elements being not more than 0.32 nm; a voltage application unit that applies a voltage to the recording layer, produces a phase change in the recording layer, and records information; an electrode layer that applies a voltage to the recording layer; and an orientation control layer provided between the recording layer and the electrode layer to control an orientation of the recording layer.

摘要翻译： 一种信息记录和再现装置，包括：记录层，包括第一层，第一层包括第一化合物，第一化合物是包含至少两种阳离子元素的共轭化合物，选自阳离子元素中的至少一种是具有 ad轨道不完全填充电子，相邻阳离子元素之间的最短距离不大于0.32nm; 向记录层施加电压的电压施加单元，在记录层中产生相变，记录信息; 向记录层施加电压的电极层; 以及设置在记录层和电极层之间的取向控制层，以控制记录层的取向。

公开(公告)号：US20110024713A1

公开(公告)日：2011-02-03

申请号：US12858975

申请日：2010-08-18

申请人： Chikayoshi KAMATA ,  Takayuki Tsukamoto ,  Kohichi Kubo ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

发明人： Chikayoshi KAMATA ,  Takayuki Tsukamoto ,  Kohichi Kubo ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1675 ,  Y10S257/92 ,  Y10S977/712 ,  Y10S977/734

摘要： According to one embodiment, a nonvolatile memory device includes a stacked body including a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer. The recording layer is capable of reversibly changing between a first state and a second state having a resistance higher than a resistance in the first state by a current supplied via the first layer and the second layer. The recording layer includes a first portion and a second portion provided in a plane of a major surface of the recording layer. The second portion has a nitrogen amount higher than a nitrogen amount in the first portion.

摘要翻译： 根据一个实施例，非易失性存储器件包括包括第一层，第二层和记录层的层叠体。 记录层设置在第一层和第二层之间。 记录层能够通过经由第一层和第二层提供的电流在具有高于第一状态的电阻的电阻的第一状态和第二状态之间可逆地改变。 记录层包括设置在记录层的主表面的平面中的第一部分和第二部分。 第二部分具有比第一部分中的氮量高的氮量。

公开(公告)号：US20100316831A1

公开(公告)日：2010-12-16

申请号：US12859911

申请日：2010-08-20

申请人： Kohichi Kubo ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

发明人： Kohichi Kubo ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

IPC分类号： B32B3/02

CPC分类号： G11B9/04

摘要： According to one embodiment, an information recording and reproducing device includes a resistive layer directly or indirectly added to a recording layer and having electric resistivity larger than electric resistivity in the low-resistance state of the recording layer. A first compound contained in the recording layer comprises a composite compound includes two or more kinds of cationic elements, at least one of the two or more kinds of cationic elements is a transition element having a d orbit filled incompletely with electrons, a shortest distance between cationic elements adjacent to each other is 0.32 nm or less.

摘要翻译： 根据一个实施例，信息记录和再现装置包括直接或间接添加到记录层的电阻层，其电阻率大于记录层的低电阻状态下的电阻率。 包含在记录层中的第一化合物包括复合化合物，包括两种或更多种阳离子元素，两种或多种阳离子元素中的至少一种是具有电子不完全填充轨道的过渡元素，阳离子 彼此相邻的元素为0.32nm以下。