公开(公告)号：US08890252B2

公开(公告)日：2014-11-18

申请号：US13190798

申请日：2011-07-26

申请人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

发明人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

IPC分类号： H01L21/70 ,  H01L21/78 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/861 ,  H02M7/00

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7398 ,  H01L29/7805 ,  H01L29/7819 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/861 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

摘要翻译： 一种半导体器件包括：具有漂移层的开关元件; 基地区 在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

公开(公告)号：US20100259798A1

公开(公告)日：2010-10-14

申请号：US12756427

申请日：2010-04-08

申请人： Jun Sakakibara ,  Katsuya Nagamochi

发明人： Jun Sakakibara ,  Katsuya Nagamochi

IPC分类号： H04N1/40

CPC分类号： H04N1/401 ,  H04N1/1017 ,  H04N1/1931 ,  H04N1/1934 ,  H04N2201/0081

摘要： According to one embodiment, a difference in output at connecting positions among line sensors of a CCD sensor is removed by adjusting the gains of gain amplifiers.

摘要翻译： 根据一个实施例，通过调节增益放大器的增益来消除CCD传感器的线传感器之间的连接位置的输出差异。

公开(公告)号：US07777918B2

公开(公告)日：2010-08-17

申请号：US11669306

申请日：2007-01-31

申请人： Hidekazu Sekizawa ,  Naoyuki Misaka ,  Jun Sakakibara

发明人： Hidekazu Sekizawa ,  Naoyuki Misaka ,  Jun Sakakibara

IPC分类号： H04N1/409

CPC分类号： G03G15/043 ,  G03G15/5025 ,  G03G2215/00177

摘要： An image forming apparatus applies a shading correction to an image read from a white reference board 18, and determines presence or absence of stripe-like noise in the image read therefrom after applying the shading correction. The apparatus exposes an area at which there is no noise in the white reference board 18 to create a white reference value for a shading correction for reading a document after that time.

摘要翻译： 图像形成装置对从白参考板18读取的图像应用阴影校正，并且在应用阴影校正之后，确定在其中读取的图像中是否存在条状噪声。 该设备在白色参考板18中露出没有噪声的区域，以创建用于在该时间之后读取文档的阴影校正的白色参考值。

公开(公告)号：US06570239B2

公开(公告)日：2003-05-27

申请号：US09804188

申请日：2001-03-13

申请人： Jun Sakakibara ,  Hitoshi Yamaguchi

发明人： Jun Sakakibara ,  Hitoshi Yamaguchi

IPC分类号： H01L2126

CPC分类号： H01L29/7801 ,  H01L29/0649 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/8605

摘要： A trench is formed in an n+ type substrate in a vertical direction from a main surface of the substrate, and a p type layer is deposited in the trench to have a recess portion. An n+ type layer is embedded in the recess portion. Accordingly, the p type layer is formed, as a resistive element, into a U-shape with ends that are ended on the main surface of the substrate. The resistive element has a resistance length corresponding to a path of the U-shape.

摘要翻译： 在基板的主表面沿垂直方向在n +型基板上形成沟槽，并且在沟槽中沉积p型层以具有凹陷部分。 n +型层嵌入凹部。 因此，p型层作为电阻元件形成U形，其端部终止在基板的主表面上。 电阻元件具有对应于U形路径的电阻长度。

公开(公告)号：US5869872A

公开(公告)日：1999-02-09

申请号：US974700

申请日：1997-11-19

申请人： Akiyoshi Asai ,  Jun Sakakibara ,  Megumi Suzuki ,  Seiji Fujino

发明人： Akiyoshi Asai ,  Jun Sakakibara ,  Megumi Suzuki ,  Seiji Fujino

IPC分类号： H01L27/04 ,  H01L21/265 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L23/62 ,  H01L27/01 ,  H01L27/76

CPC分类号： H01L27/0266 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device having an SOI structure is capable of preventing occurrence of leak current flowing from a diffusion layer even when a semiconductor element having a pn-junction is included in the semiconductor substrate. The semiconductor integrated circuit device having the SOI structure is formed with a semiconductor layer, or SOI layer, on a p-type semiconductor substrate through a buried insulating film and further with semiconductor circuit elements serving as functional elements at the SOI layer thus formed. As a protection transistor to protect the semiconductor circuit elements, a MOSFET may be formed in which n-type diffusion layers are formed in the semiconductor substrate. The n-type diffusion layers of the MOSFET are to be surrounded by p-type diffusion layers more highly doped than the semiconductor substrate.

摘要翻译： 具有SOI结构的半导体集成电路器件即使当具有pn结的半导体元件被包括在半导体衬底中时，也能够防止从扩散层流出的漏电流的发生。 具有SOI结构的半导体集成电路器件通过掩埋绝缘膜在p型半导体衬底上形成半导体层或SOI层，并且还在半导体电路元件作为这样形成的SOI层上的功能元件。 作为用于保护半导体电路元件的保护晶体管，可以形成在半导体衬底中形成n型扩散层的MOSFET。 MOSFET的n型扩散层将被比半导体衬底更高掺杂的p型扩散层包围。

公开(公告)号：US08537428B2

公开(公告)日：2013-09-17

申请号：US12756427

申请日：2010-04-08

申请人： Jun Sakakibara ,  Katsuya Nagamochi

发明人： Jun Sakakibara ,  Katsuya Nagamochi

IPC分类号： H04N1/40 ,  H04N1/04

CPC分类号： H04N1/401 ,  H04N1/1017 ,  H04N1/1931 ,  H04N1/1934 ,  H04N2201/0081

摘要： An apparatus includes a white reference member, an exposure lamp, a CCD sensor including a plurality of linear sensors connected in series, and a plurality of gain amplifiers which amplifies the outputs of the linear sensors, respectively. The apparatus selects one linear sensor, adjusts the gain of the gain amplifier corresponding to the selected linear sensor, adjusts the gain of the gain amplifier corresponding to the linear sensor existing to the left side of the selected linear sensor, and adjusts the gain of the gain amplifier corresponding to the linear sensor existing to the right side of the selected linear sensor. A difference in output at connecting positions among the line sensors is removed by adjusting the gains of gain amplifiers.

摘要翻译： 一种装置包括白色参考构件，曝光灯，包括串联连接的多个线性传感器的CCD传感器和分别放大线性传感器的输出的多个增益放大器。 该装置选择一个线性传感器，调整对应于所选择的线性传感器的增益放大器的增益，调整对应于存在于所选线性传感器左侧的线性传感器的增益放大器的增益，并调整 对应于存在于所选线性传感器右侧的线性传感器的增益放大器。 通过调节增益放大器的增益来消除线路传感器之间连接位置的输出差异。

公开(公告)号：US20110286055A1

公开(公告)日：2011-11-24

申请号：US13110732

申请日：2011-05-18

申请人： Yusuke Hashizume ,  Sueo Ueno ,  Katsuya Nagamochi ,  Hiroyuki Shiraishi ,  Koji Shimokawa ,  Jun Sakakibara

发明人： Yusuke Hashizume ,  Sueo Ueno ,  Katsuya Nagamochi ,  Hiroyuki Shiraishi ,  Koji Shimokawa ,  Jun Sakakibara

IPC分类号： H04N1/04

CPC分类号： H04N1/193 ,  H04N1/1013 ,  H04N1/1938 ,  H04N2201/0094

摘要： An image forming apparatus is provided which can form an image of excellent picture quality in which a streak does not appear at a specified position in a main scanning direction. A reading control apparatus includes an illuminator to irradiate an illumination light to a document of a reading object, a CCD sensor that includes a plurality of light-receiving elements arranged in one line to receive the illumination light reflected by the document, and sequentially outputs electric signals stored in the light-receiving elements, a read control part that acquires, with respect to the electric signals of each line generated by the CCD sensor, electric signals by reading the electric signals starting from an electric signal corresponding to a position outside one end, in a main scanning direction, which is one of both ends of the document of the reading target in the main scanning direction and is the end where an electric signal is outputted from the CCD sensor at an earlier timing, a pre-processing part to perform a specified pre-process on the electric signals acquired by the read control part, and an image output control part that removes, with respect to the electric signals of each line, electric signals corresponding to a range outside the one end from the electric signals processed by the pre-processing part, acquires electric signals starting from the electric signal corresponding to the one end, and outputs only the acquired electric signals to outside.

摘要翻译： 提供一种图像形成装置，其可以形成在主扫描方向上的特定位置处不出现条纹的优异图像质量的图像。 一种读取控制装置，包括将照明光照射到读取对象的原稿的照明装置，CCD传感器，其包括以一行布置的多个受光元件，以接收由原稿反射的照明光，并依次输出电 存储在光接收元件中的信号，读取控制部分，通过从对应于一端外部的位置的电信号读取电信号，获取关于由CCD传感器产生的每行的电信号的电信号 在作为主扫描方向的读取对象文件的两端之一的主扫描方向上，是在较早的时刻从CCD传感器输出电信号的结束，预处理部分 对由读取控制部分获取的电信号执行指定的预处理，以及图像输出控制部分，其相对于该ele 每条线的ctric信号，与从预处理部分处理的电信号相对应的一端范围的电信号，从与该一端相对应的电信号开始获取电信号，并将所获取的电信号仅输出到 外。

公开(公告)号：US20110286054A1

公开(公告)日：2011-11-24

申请号：US13110707

申请日：2011-05-18

申请人： Sueo Ueno ,  Naoaki Ide ,  Jun Sakakibara ,  Katsuya Nagamochi ,  Hiroyuki Shiraishi ,  Yusuke Hashizume ,  Kenji Itagaki ,  Sasuke Endo ,  Koji Shimokawa ,  Naoya Koseki ,  Mitsuru Hatano

发明人： Sueo Ueno ,  Naoaki Ide ,  Jun Sakakibara ,  Katsuya Nagamochi ,  Hiroyuki Shiraishi ,  Yusuke Hashizume ,  Kenji Itagaki ,  Sasuke Endo ,  Koji Shimokawa ,  Naoya Koseki ,  Mitsuru Hatano

IPC分类号： H04N1/04

CPC分类号： H04N1/02835 ,  H04N1/02885 ,  H04N1/0315 ,  H04N1/1017 ,  H04N2201/0094

摘要： According to one embodiment, a reading head includes: a carriage configured to move in a sub-scanning direction with respect to a document table glass; a first light source provided to be movable integrally with the carriage and configured to illuminate a reading target position on the document table glass from an angle tilting to one side in the sub-scanning direction with respect to a reading optical axis extending in a normal direction in the reading target position on the document table glass; and a second light source provided to be movable integrally with the carriage and configured to illuminate the reading target position from a tilting angle larger than the angle of the first light source to the other side in the sub-scanning direction with respect to the reading optical axis and from a position further apart from the reading target position than the first light source.

摘要翻译： 根据一个实施例，读取头包括：托架，被构造成相对于文件台玻璃在副扫描方向上移动; 第一光源，其设置成与所述托架一体地移动，并且被配置为相对于沿法线方向延伸的读取光轴从所述副扫描方向的角度倾斜到一侧照射所述文件台玻璃上的读取目标位置 在阅读目标位置上的文件台玻璃上; 以及第二光源，其被设置为与所述托架一体地移动并且被配置为相对于所述读取光学器从所述副扫描方向上的倾斜角度大于所述第一光源的角度向所述另一侧的倾斜角度照亮所述读取目标位置 从与第一光源相比读取目标位置更远的位置。

公开(公告)号：US07928470B2

公开(公告)日：2011-04-19

申请号：US11598646

申请日：2006-11-14

申请人： Hitoshi Yamaguchi ,  Jun Sakakibara

发明人： Hitoshi Yamaguchi ,  Jun Sakakibara

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.

摘要翻译： 具有超结MOS晶体管的半导体器件包括：半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。 阳极电极提供肖特基势垒二极管。

公开(公告)号：US07675658B2

公开(公告)日：2010-03-09

申请号：US12041227

申请日：2008-03-03

申请人： Jun Sakakibara

发明人： Jun Sakakibara

IPC分类号： H04N1/46 ,  H04N1/40 ,  H04N1/04

CPC分类号： H04N1/486 ,  H04N5/3692 ,  H04N9/045

摘要： When a monochromatic original is read, a control is effected to transfer a charge accumulated in a monochromatic photodiode array to a rear stage, and not to accumulate charges in respective color photodiode arrays. When a color original is read, a control is effected to transfer charges accumulated in the respective photodiode arrays and not to accumulate a charge in the monochromatic photodiode array.

摘要翻译： 当读取单色原稿时，进行控制以将累积在单色光电二极管阵列中的电荷转移到后级，而不是在各个彩色光电二极管阵列中积累电荷。 当读取彩色原稿时，进行控制以转移在各个光电二极管阵列中累积的电荷，而不是在单色光电二极管阵列中积累电荷。