公开(公告)号：US5869872A

公开(公告)日：1999-02-09

申请号：US974700

申请日：1997-11-19

申请人： Akiyoshi Asai ,  Jun Sakakibara ,  Megumi Suzuki ,  Seiji Fujino

发明人： Akiyoshi Asai ,  Jun Sakakibara ,  Megumi Suzuki ,  Seiji Fujino

IPC分类号： H01L27/04 ,  H01L21/265 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L23/62 ,  H01L27/01 ,  H01L27/76

CPC分类号： H01L27/0266 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002

摘要： A semiconductor integrated circuit device having an SOI structure is capable of preventing occurrence of leak current flowing from a diffusion layer even when a semiconductor element having a pn-junction is included in the semiconductor substrate. The semiconductor integrated circuit device having the SOI structure is formed with a semiconductor layer, or SOI layer, on a p-type semiconductor substrate through a buried insulating film and further with semiconductor circuit elements serving as functional elements at the SOI layer thus formed. As a protection transistor to protect the semiconductor circuit elements, a MOSFET may be formed in which n-type diffusion layers are formed in the semiconductor substrate. The n-type diffusion layers of the MOSFET are to be surrounded by p-type diffusion layers more highly doped than the semiconductor substrate.

摘要翻译： 具有SOI结构的半导体集成电路器件即使当具有pn结的半导体元件被包括在半导体衬底中时，也能够防止从扩散层流出的漏电流的发生。 具有SOI结构的半导体集成电路器件通过掩埋绝缘膜在p型半导体衬底上形成半导体层或SOI层，并且还在半导体电路元件作为这样形成的SOI层上的功能元件。 作为用于保护半导体电路元件的保护晶体管，可以形成在半导体衬底中形成n型扩散层的MOSFET。 MOSFET的n型扩散层将被比半导体衬底更高掺杂的p型扩散层包围。

公开(公告)号：US5751041A

公开(公告)日：1998-05-12

申请号：US732995

申请日：1996-10-16

申请人： Megumi Suzuki ,  Akiyoshi Asai ,  Jun Sakakibara

发明人： Megumi Suzuki ,  Akiyoshi Asai ,  Jun Sakakibara

IPC分类号： H01L21/761 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01 ,  H01L23/62

CPC分类号： H01L21/8221 ,  H01L27/0688 ,  H01L2924/0002

摘要： In a semiconductor integrated circuit device having an input protection circuit element such as a diode formed in the semiconductor substrate, the leak current is suppressed. An nMOS transistor and a pMOS transistor that constitute a CMOS inverter circuit are formed using a SOI structure. An n-type diffusion layer and p-type diffusion layer are formed within the semiconductor substrate to thereby construct a protective diode that forms an input protection circuit for the CMOS inverter circuit. By surrounding the outer periphery of the n-type diffusion layer with the p-type diffusion layer, the depletion layer that is formed at an interface between the semiconductor substrate and a buried insulation film therein is cut off by the p-type diffusion layer, thereby suppressing the leak current between the n-type diffusion layer and the p-type diffusion layer.

摘要翻译： 在半导体衬底中具有诸如二极管的输入保护电路元件的半导体集成电路器件中，泄漏电流被抑制。 使用SOI结构形成构成CMOS反相器电路的nMOS晶体管和pMOS晶体管。 在半导体衬底内形成n型扩散层和p型扩散层，从而构成形成CMOS反相器电路的输入保护电路的保护二极管。 通过用p型扩散层围绕n型扩散层的外周，通过p型扩散层切断在半导体衬底和其中的掩埋绝缘膜之间的界面处形成的耗尽层， 从而抑制n型扩散层和p型扩散层之间的漏电流。

公开(公告)号：US06191007B1

公开(公告)日：2001-02-20

申请号：US09066971

申请日：1998-04-28

申请人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

发明人： Masaki Matsui ,  Shoichi Yamauchi ,  Hisayoshi Ohshima ,  Kunihiro Onoda ,  Akiyoshi Asai ,  Takanari Sasaya ,  Takeshi Enya ,  Jun Sakakibara

IPC分类号： H01L21331

CPC分类号： H01L21/84 ,  H01L21/02667 ,  H01L21/2022 ,  H01L21/76243 ,  H01L21/76254 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76283 ,  H01L2221/68363

摘要： Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure has been formed it is possible to greatly increase the film thickness uniformity of the semiconductor layer and the film thickness controllability, particularly when the semiconductor layer is being formed as an extremely thin film. As a result, it is possible to achieve improved quality and characteristics of the semiconductor substrates and make possible the deployment of such semiconductor substrates to various uses.

摘要翻译： 制造半导体衬底的方法，其中半导体器件用于形成半导体器件的半导体层形成在支撑衬底上，绝缘膜介于其之间，在形成掩埋图案结构的衬底上形成半导体层是可能的 大大增加了半导体层的膜厚均匀性和膜厚可控性，特别是当半导体层被形成为极薄膜时。 结果，可以实现半导体衬底的改进的质量和特性，并且可以将这种半导体衬底部署到各种用途上。

公开(公告)号：US08890252B2

公开(公告)日：2014-11-18

申请号：US13190798

申请日：2011-07-26

申请人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

发明人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

IPC分类号： H01L21/70 ,  H01L21/78 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/861 ,  H02M7/00

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7398 ,  H01L29/7805 ,  H01L29/7819 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/861 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

摘要翻译： 一种半导体器件包括：具有漂移层的开关元件; 基地区 在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

公开(公告)号：US20100259798A1

公开(公告)日：2010-10-14

申请号：US12756427

申请日：2010-04-08

申请人： Jun Sakakibara ,  Katsuya Nagamochi

发明人： Jun Sakakibara ,  Katsuya Nagamochi

IPC分类号： H04N1/40

CPC分类号： H04N1/401 ,  H04N1/1017 ,  H04N1/1931 ,  H04N1/1934 ,  H04N2201/0081

摘要： According to one embodiment, a difference in output at connecting positions among line sensors of a CCD sensor is removed by adjusting the gains of gain amplifiers.

摘要翻译： 根据一个实施例，通过调节增益放大器的增益来消除CCD传感器的线传感器之间的连接位置的输出差异。

公开(公告)号：US07777918B2

公开(公告)日：2010-08-17

申请号：US11669306

申请日：2007-01-31

申请人： Hidekazu Sekizawa ,  Naoyuki Misaka ,  Jun Sakakibara

发明人： Hidekazu Sekizawa ,  Naoyuki Misaka ,  Jun Sakakibara

IPC分类号： H04N1/409

CPC分类号： G03G15/043 ,  G03G15/5025 ,  G03G2215/00177

摘要： An image forming apparatus applies a shading correction to an image read from a white reference board 18, and determines presence or absence of stripe-like noise in the image read therefrom after applying the shading correction. The apparatus exposes an area at which there is no noise in the white reference board 18 to create a white reference value for a shading correction for reading a document after that time.

摘要翻译： 图像形成装置对从白参考板18读取的图像应用阴影校正，并且在应用阴影校正之后，确定在其中读取的图像中是否存在条状噪声。 该设备在白色参考板18中露出没有噪声的区域，以创建用于在该时间之后读取文档的阴影校正的白色参考值。

公开(公告)号：US20090103149A1

公开(公告)日：2009-04-23

申请号：US11874442

申请日：2007-10-18

申请人： Jun Sakakibara ,  Koji Tanimoto

发明人： Jun Sakakibara ,  Koji Tanimoto

IPC分类号： G06K1/00 ,  H04N1/46

CPC分类号： H04N1/46 ,  H04N1/00795 ,  H04N1/00806 ,  H04N1/00822 ,  H04N1/00824 ,  H04N1/193 ,  H04N1/2307 ,  H04N1/233 ,  H04N1/2369 ,  H04N1/2392 ,  H04N2201/0091

摘要： It is made possible to determine image characteristics in a reading image while the image of an original is being read. A first line sensor (9R2, 9G2, 9B2) is arranged on a board and reads the original image. A second line sensor (9K1) has a larger number of pixels than the first line sensor and is arranged on the board to read the original image earlier than the first line sensor. An image signal processing characteristic control unit (46) uses an output of the second line sensor as a control signal to control the processing characteristic of the image signal read by the first line sensor.

摘要翻译： 可以在正在读取原稿的图像的同时确定读取图像中的图像特性。 第一行传感器（9R2,9G2,9B2）布置在板上并读取原始图像。 第二行传感器（9K1）具有比第一行传感器更多的像素数量，并且布置在板上以比第一行传感器更早地读取原始图像。 图像信号处理特性控制单元（46）使用第二行传感器的输出作为控制信号来控制由第一行传感器读取的图像信号的处理特性。

公开(公告)号：US20070229925A1

公开(公告)日：2007-10-04

申请号：US11806118

申请日：2007-05-30

申请人： Jun Sakakibara ,  Koji Tanimoto

发明人： Jun Sakakibara ,  Koji Tanimoto

IPC分类号： H04N1/46

CPC分类号： H04N9/045 ,  H04N1/46 ,  H04N5/3692

摘要： A 4-line CCD sensor according to one embodiment of the present invention has a monochromic reading line sensor section and a color reading line sensor section. This 4-line CCD sensor is characterized in that amplification factors for amplifiers 1 to 4 are set so that the amplitude of an output signal from the monochromic reading line sensor section is the same as that of each output signal from the color reading line sensor section. This 4-line CCD sensor is characterized in that the amplification factors for the amplifiers 1 to 4 are set so that the amplitude of each output signal from the color reading line sensor section is smaller than that of an output signal from the monochromic reading line sensor section.

摘要翻译： 根据本发明的一个实施例的4线CCD传感器具有单色读取线传感器部分和彩色读取线传感器部分。 该4线CCD传感器的特征在于放大器1〜4的放大系数被设定为使得来自单色读取线传感器部的输出信号的振幅与来自彩色读取线传感器部的每个输出信号的幅度相同 。 该4线CCD传感器的特征在于，放大器1至4的放大系数被设置为使得来自彩色读取线传感器部分的每个输出信号的幅度小于来自单色读取线传感器的输出信号的振幅 部分。

公开(公告)号：US07274496B2

公开(公告)日：2007-09-25

申请号：US10377818

申请日：2003-03-04

申请人： Jun Sakakibara ,  Koji Tanimoto

发明人： Jun Sakakibara ,  Koji Tanimoto

IPC分类号： H04N1/46 ,  H04N1/04

CPC分类号： H04N9/045 ,  H04N1/46 ,  H04N5/3692

摘要： A 4-line CCD sensor according to one embodiment of the present invention has a monochromic reading line sensor section and a color reading line sensor section. This 4-line CCD sensor is characterized in that amplification factors for amplifiers 1 to 4 are set so that the amplitude of an output signal from the monochromic reading line sensor section is the same as that of each output signal from the color reading line sensor section. This 4-line CCD sensor is characterized in that the amplification factors for the amplifiers 1 to 4 are set so that the amplitude of each output signal from the color reading line sensor section is smaller than that of an output signal from the monochromic reading line sensor section.

摘要翻译： 根据本发明的一个实施例的4线CCD传感器具有单色读取线传感器部分和彩色读取线传感器部分。 该4线CCD传感器的特征在于放大器1〜4的放大系数被设定为使得来自单色读取线传感器部的输出信号的振幅与来自彩色读取线传感器部的每个输出信号的幅度相同 。 该4线CCD传感器的特征在于，放大器1至4的放大系数被设置为使得来自彩色读取线传感器部分的每个输出信号的幅度小于来自单色读取线传感器的输出信号的振幅 部分。

公开(公告)号：US06989851B2

公开(公告)日：2006-01-24

申请号：US10938659

申请日：2004-09-13

申请人： Koji Tanimoto ,  Kenichi Komiya ,  Jun Sakakibara ,  Naoaki Ide ,  Toshimitsu Ichiyanagi

发明人： Koji Tanimoto ,  Kenichi Komiya ,  Jun Sakakibara ,  Naoaki Ide ,  Toshimitsu Ichiyanagi

IPC分类号： B41J2/47 ,  B41J2/435

CPC分类号： B41J2/473 ,  G02B26/127 ,  H04N1/0473 ,  H04N1/1135 ,  H04N1/1911 ,  H04N2201/02439 ,  H04N2201/04712 ,  H04N2201/04734 ,  H04N2201/04744 ,  H04N2201/04749 ,  H04N2201/04762 ,  H04N2201/04794

摘要： A light beam position detecting device detects the passage positions of a plurality of light beams for scanning the surface of a photosensitive drum. The light beam position detecting device has a sensor pattern for generating an output which is continuously changed in a wide range with a variation in the passage position of the light beam in a sub-scanning direction perpendicular to a main scanning direction of the light beam. The sensor pattern precisely detects the relative scanning position of the light beam in a wide range. The passage positions of the plurality of light beams for scanning the surface of the photosensitive drum are controlled to a preset position based on the output of the sensor pattern.