摘要:
A charging apparatus including a charging tube which has an outer surface contacting a photoconductive medium and electrically charges a surface of the photoconductive medium, a shaft which is disposed in the charging tube and to which a charging voltage is applied, and a conductive member which is connected to the shaft and contacts an inner surface of the charging tube. A friction coefficient between the conductive member and the inner surface of the charging tube may be less than a friction coefficient between the photoconductive medium and the outer surface of the charging tube, so that a slip phenomenon of the charging tube is prevented.
摘要:
A developing roller including a housing containing toner; and a developing roller installed in the housing and supplies the toner to an electrostatic latent image formed on a photoconductor, the developing roller including a cylindrical unit in the form of a hollow pipe and a power transmission unit connected to one end of the cylindrical unit and connected to a power transmission member for rotating the developing roller. Both ends of the cylindrical unit are supported by the housing and the power transmission unit is not restricted by the housing. Both ends of the cylindrical unit are supported by the housing and the power transmission unit is not restricted by the housing.
摘要:
Disclosed herein are a valve and a micro fluid pump having the same. The valve is mounted in a micro fluid pump having a capillary tube, to which a gas supply unit and a fluid transfer pipe are connected, for controlling the introduction and the discharge of fluid. The valve includes a discharge pipe filled with liquid such that the discharge pipe has a predetermined resistance pressure and constructed in a structure in which one end of the discharge pipe is connected to the capillary tube such that the discharge pipe communicates with the interior of the capillary tube, and the other end of the discharge pipe is open, thereby allowing gas out of the capillary tube through the discharge pipe when a gas pressure in the capillary tube exceeds the resistance pressure of the discharge pipe.
摘要:
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要:
A memory device includes a gate stack on a substrate. The gate stack is disposed between a source and a drain. The gate stack includes a tunneling film, storage node, and control oxide film. A thickness of the control oxide film is greater than or equal to about 5 nm and less than or equal to about 30 nm. A method of manufacturing a memory device, including a gate stack on a substrate, wherein the gate stack is disposed between a source and a drain, includes: sequentially forming a tunneling film, a first silicon-rich oxide film, and a control oxide film on the substrate, wherein the first silicon-rich oxide film comprises a SiOx film (1.5
摘要:
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
摘要:
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要:
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a cell including a transistor and a magnetic tunneling junction (MTJ) layer connected to the transistor, wherein the MTJ layer includes a lower electrode, a lower magnetic film, a tunneling film having a uniform thickness and a substantially flat upper surface, and an upper magnetic film, wherein the lower electrode includes a first lower electrode and an amorphous second lower electrode. An amorphous flattening film may be further formed between the lower electrode and the lower magnetic film.
摘要:
A magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices wherein MTJs are arranged at cross points of word lines and read bit lines to form memory cells. After write bit lines and read bit lines are arranged parallel to each other, current bypass paths are formed allowing current to bypass the side and bottom of the MTJ. Thus, an electric field having intensity enough to change the magnetization direction of the MTJ, is applied only to each selected cell. In a write operation, the magnetization direction of a free layer in the MTJ is formed to be parallel or antiparallel to the magnetization direction of a pinned ferromagnetic layer by the current passing through the word line and the current bypass path.
摘要:
A battery pack including a battery cell including an electrode assembly arranged within a can and an electrode terminal electrically connected to the electrode assembly, the can having an opening sealed by a cap plate, a top case attached to the battery cell at a top portion of the battery cell, the top case having an inner space and a protective circuit module including a protection circuit board arranged within said inner space of said top case and electrically connected to the electrode assembly, wherein the top case includes a top portion opposite from the electrode assembly and first and second pairs of opposed sides, the first pair of opposed sides having an edge, a portion of the edge has a recessed interference preventing portion, the recessed interference preventing portion corresponds to a location of a weld connecting an electrode tap to the electrode terminal.