Digital watermark image processing method
    51.
    发明授权
    Digital watermark image processing method 有权
    数字水印图像处理方法

    公开(公告)号:US06584210B1

    公开(公告)日:2003-06-24

    申请号:US09274103

    申请日:1999-03-23

    IPC分类号: G06K900

    摘要: An image processing apparatus having an adding unit to add information by changing a data value of image data and a detecting unit to detect the information added to the image data. In a digital watermark image processing method in the image processing apparatus, filter passage image data is formed by performing an image filtering process to original image data, watermark core image data is formed by performing a process to obtain a difference between the filter passage image data and the original image data, change amount image data is formed by performing a process to obtain a value to change the data value of the image data on the basis of the watermark core image data and desired information to be added, and watermark inserted image data is formed by performing a process to add the original image data and the change amount image data.

    摘要翻译: 一种图像处理装置,具有通过改变图像数据的数据值来添加信息的添加单元和检测附加到图像数据的信息的检测单元。 在图像处理装置中的数字水印图像处理方法中,通过对原始图像数据进行图像滤波处理来形成滤波器通过图像数据,通过执行获得滤波器通过图像数据之间的差异的处理来形成水印核心图像数据 并且通过执行基于水印核心图像数据和期望的要添加的信息来获得改变图像数据的数据值的处理来形成原始图像数据,改变量图像数据,以及水印插入图像数据 通过执行添加原始图像数据和变化量​​图像数据的处理来形成。

    Apparatus for recording and reproducing digital information signals of different transmission rates
    52.
    发明授权
    Apparatus for recording and reproducing digital information signals of different transmission rates 失效
    用于记录和再现不同传输速率的数字信息信号的装置

    公开(公告)号:US06441979B1

    公开(公告)日:2002-08-27

    申请号:US08405288

    申请日:1995-03-16

    IPC分类号: G11B509

    摘要: In a digital information recording and reproducing apparatus of a rotary magnetic head type for selecting and recording a plurality of digital information signals having different transmission rates and for selectively reproducing the recorded signal, a high-rate digital information signal and a low-rate digital information signal are inputted for selection of either one thereof to be converted by a recording-system encoder into two channels of recording signals. When recording the high-rate signal, the rotary drum is turned at a rotation speed and the magnetic tape is fed at a feed speed (V1) to conduct 4-track azimuth recording of the signals for each rotation of the rotary drum by the first to fourth magnetic heads. To record the low-rate signal, the rotary drum is turned at a rotation speed substantially equal to the first rotation speed and the magnetic tape is fed at a feed speed almost equal to (V1/N) so as to achieve 4-track azimuth recording of record signals compressed on a time axis to 1/N of the original signals for every N rotations of the rotary drum by the magnetic heads. A reproducing system receives two channels of signals reproduced by the first to fourth magnetic heads and conducts for the signals such processes reverse to those of the encoding process of the recording system.

    摘要翻译: 在用于选择和记录具有不同传输速率的多个数字信息信号并用于选择性地再现记录信号的旋转磁头类型的数字信息记录和再现装置中,高速数字信息信号和低速数字信息 输入信号以选择要由记录系统编码器转换成两个通道的记录信号。 当记录高速率信号时,旋转磁鼓以转速转动,磁带以进给速度(V1)进给,以便通过第一个旋转磁鼓对旋转磁鼓的每次旋转的信号进行四磁道方位记录 到第四磁头。 为了记录低速率信号,旋转磁鼓以基本上等于第一转速的转速转动,并且磁带以几乎等于(V1 / N)的馈送速度馈送,以便实现4磁道方位角 通过磁头对旋转磁鼓的每N次旋转记录在时间轴上压缩的记录信号为原始信号的1 / N。 再现系统接收由第一至第四磁头再现的两个信道信道,并对与记录系统的编码处理相反的处理进行传送。

    Process for making lithographic printing plate
    53.
    发明授权
    Process for making lithographic printing plate 失效
    平版印刷版制作工艺

    公开(公告)号:US06132938A

    公开(公告)日:2000-10-17

    申请号:US184023

    申请日:1998-11-02

    摘要: There is disclosed a process for making a lithographic printing plate which comprises subjecting a lithographic printing plate precursor having a silver thin film on a grained and anodized aluminum base to exposure by a heat-mode laser beam whereby removing the silver thin film, wherein the aluminum base has a surface activity which can form physical development silver in an amount of 0.5 g/m.sup.2 or more when the base is processed by using the following Physical development solution 1 at 23.degree. C. for 30 minutes:Physical development solution 1 wherein 1 part by volume of Solution B is added to 5 parts by volume of Solution A;______________________________________ Solution A: Anhydrous sodium sulfite 180 g 10% Silver nitrate solution 75 ml Make up to 1000 ml with addition of water, Solution B: Anhydrous sodium sulfite 20 g Hydroquinone 20 g Make up to 1000 ml with addition of water. ______________________________________

    摘要翻译: 公开了一种用于制造平版印刷版的方法,该方法包括使经过粒状和阳极化处理的铝基底上具有银薄膜的平版印刷版原版通过热模式激光束曝光,从而除去银薄膜,其中铝 碱可以通过在23℃下使用以下物理显影液1处理30分钟来处理基底时,可以形成0.5g / m 2以上的物理显影银的表面活性:物理显影液1,其中1份 溶液B加入5体积份溶液A中; - 溶液A:无水亚硫酸钠180g-10%硝酸银溶液75ml - 加水加至1000ml溶液B:无水亚硫酸钠20g - 对苯二酚20g - 添加至1000ml 水。 -

    Signal recording/reproducing method and apparatus in which key
information for descrambling is recorded in an area on the signal
recording medium
    54.
    发明授权
    Signal recording/reproducing method and apparatus in which key information for descrambling is recorded in an area on the signal recording medium 失效
    信号记录/再现方法和设备,其中用于解扰的密钥信息被记录在信号记录介质上的区域中

    公开(公告)号:US5897218A

    公开(公告)日:1999-04-27

    申请号:US867516

    申请日:1997-06-02

    CPC分类号: H04N5/9201 H04N5/926

    摘要: By receiving a key signal for descrambling before reproducing a program signal so as to record the scrambled program signal as it is and descramble and view it by a decoder at the time of reproducing or by reading and reproducing the record, a signal recording/reproducing method and apparatus therefor wherein a possibility that a program which is distributed for specified viewers with payment is viewed by the public at an optional location without payment is eliminated and on the other hand, a viewer can view a broadcasted program freely at any time he wants is provided.

    摘要翻译: 通过在再现程序信号之前接收用于解扰的密钥信号,以便原样记录加扰的程序信号,并且在再现时由解码器进行解码和查看,或通过读取和再现记录,信号记录/再现方法 以及其装置,其中消除了在公共场所在任意位置没有付款的情况下分配给具有支付的指定观众的节目的可能性,另一方面,观众可以在任何时候自由观看广播节目, 提供。

    Semiconductor device including a protective element having negative
resistance characteristic
    55.
    发明授权
    Semiconductor device including a protective element having negative resistance characteristic 失效
    包括具有负电阻特性的保护元件的半导体器件

    公开(公告)号:US5821586A

    公开(公告)日:1998-10-13

    申请号:US543047

    申请日:1995-10-13

    IPC分类号: H01L29/78 H01L27/02 H01L23/62

    CPC分类号: H01L27/0251 H01L2924/0002

    摘要: A semiconductor device has a vertical MOS FET and a trigger element connected between the drain and the gate of the MOS FET. The trigger element has a heavily doped n region, a lightly doped p region and a lightly doped n region. The trigger element has a breakdown voltage lower than the drain-to-source rated voltage of the MOS FET and exhibits a negative resistance characteristic. A surge voltage enterring the drain of the MOS FET raises the gate potential of the MOS FET by flowing through the trigger element to thereby trigger the source-drain path of the MOS FET. The negative resistance characteristic of the trigger element enables to lower the temperature rise of the MOS FET to thereby protect the MOS FET against thermal destruction. A bidirectional diode set may be connected in series to the trigger element to design various breakdown voltage of the protective path.

    摘要翻译: 半导体器件具有垂直MOS FET和连接在MOS FET的漏极和栅极之间的触发元件。 触发元件具有重掺杂的n区,轻掺杂的p区和轻掺杂的n区。 触发元件具有低于MOS FET的漏极 - 源极额定电压的击穿电压,并具有负电阻特性。 进入MOS FET的漏极的浪涌电压通过流过触发元件而提高MOS FET的栅极电位,从而触发MOS FET的源极 - 漏极路径。 触发元件的负电阻特性能够降低MOS FET的温度上升,从而保护MOS FET免受热破坏。 双向二极管组可以与触发元件串联连接,以设计保护路径的各种击穿电压。

    IGFET circuit preventing parasitic diode current
    56.
    发明授权
    IGFET circuit preventing parasitic diode current 失效
    IGFET电路防止寄生二极管电流

    公开(公告)号:US5789779A

    公开(公告)日:1998-08-04

    申请号:US871984

    申请日:1997-06-10

    摘要: The invention has the object of realizing a semiconductor device in which the various problems brought about by parasitic diodes in configuring a circuit are prevented, the semiconductor device being provided with first and second insulated-gate field-effect transistors, and being configured such that the source regions of the first and second insulation gate field-effect transistors are electrically connected, the back gate region, which in part constitutes a channel, and the source region of the first insulated-gate field-effect transistor are electrically connected, and the back gate region of the second insulated-gate field-effect transistor is electrically connected to the drain region of the first insulated-gate field-effect transistor.

    摘要翻译: 本发明的目的是实现一种半导体器件,其中防止寄生二极管在构成电路中引起的各种问题,半导体器件设置有第一和第二绝缘栅场效应晶体管,并且被配置为使得 第一绝缘栅场效应晶体管和第二绝缘栅场效应晶体管的源极区域电连接,部分构成沟道的背栅极区域和第一绝缘栅场效应晶体管的源极区域电连接,背面 第二绝缘栅场效应晶体管的栅极区电连接到第一绝缘栅场效应晶体管的漏极区。

    Low-noise zener diode
    57.
    发明授权
    Low-noise zener diode 失效
    低噪声齐纳二极管

    公开(公告)号:US5612568A

    公开(公告)日:1997-03-18

    申请号:US560190

    申请日:1995-11-21

    申请人: Takao Arai

    发明人: Takao Arai

    IPC分类号: H01L29/866 H01L29/861

    CPC分类号: H01L29/866

    摘要: A low-noise Zener diode that enables to improve the surge resistance performance without degeneration of its low-noise characteristic is provided. The diode contains a semiconductor substrate of a first conductivity type and a first impurity doped region of a second conductivity type formed in a surface area of the substrate. The first impurity doped region has spaces into which no impurity of the second conductivity type is doped. The diode further contains a second impurity doped region of the second conductivity type formed in the first impurity doped region. The second impurity doped region has a depth less than that of the first impurity doped region. The second impurity doped region is contacted with the substrate in the spaces, producing main p-n junctions of the diode at respective interfaces of the second impurity doped regions and the substrate. The second impurity doped region is contacted with the first impurity doped region other than in the spaces. Heat generation zones of the main p-n junctions are combined with each other to produce a total heat generation zone that is greater than a sum area of the main p-n junctions.

    摘要翻译: 提供了一种低噪声齐纳二极管,可以提高浪涌电阻性能,而不会降低其低噪声特性。 二极管包含形成在衬底的表面区域中的第一导电类型的半导体衬底和第二导电类型的第一杂质掺杂区域。 第一杂质掺杂区域具有不掺杂第二导电类型的杂质的空间。 二极管还包含在第一杂质掺杂区域中形成的第二导电类型的第二杂质掺杂区域。 第二杂质掺杂区域的深度小于第一杂质掺杂区域的深度。 第二杂质掺杂区域与空间中的衬底接触,在第二杂质掺杂区域和衬底的相应界面产生二极管的主p-n结。 第二杂质掺杂区域与除了空间中的第一杂质掺杂区域接触。 主p-n结的热产生区彼此组合以产生大于主p-n结的总面积的总发热区。

    Semiconductor device with parallel-connected diodes
    58.
    发明授权
    Semiconductor device with parallel-connected diodes 失效
    具有并联二极管的半导体器件

    公开(公告)号:US5548152A

    公开(公告)日:1996-08-20

    申请号:US260832

    申请日:1994-06-16

    申请人: Takao Arai

    发明人: Takao Arai

    CPC分类号: H01L27/0251 H01L27/0255

    摘要: A semiconductor device for electrostatic-charge protection is provided. The device includes first and second diodes parallel-connected and an MOS transistor connected serially to the second diode, all of which are provided on a semiconductor substrate. The breakdown voltages of the first and second diodes are higher than the threshold voltage of the MOS transistor. When a voltage lower than the threshold voltage is applied across a pair of electrodes of the device, the MOS transistor is open, so that only the first diode is effective, providing small capacitance between the pair of the electrodes. When a voltage equal to or higher than the threshold voltage is applied across the pair of the electrodes, the MOS transistor becomes short, so that both of the first and second diodes becomes effective. Therefore, when a voltage higher than the breakdown voltages is applied, both of the diodes absorb applied electrostatic energy, which means that the withstand voltage between the pair of the electrodes can be higher than those of the conventional ones.

    摘要翻译: 提供了一种用于静电电荷保护的半导体器件。 该器件包括并联的第一和第二二极管和串联连接到第二二极管的MOS晶体管,所有这些都设置在半导体衬底上。 第一和第二二极管的击穿电压高于MOS晶体管的阈值电压。 当低于阈值电压的电压施加在器件的一对电极上时,MOS晶体管断开,使得仅第一二极管有效,在一对电极之间提供小的电容。 当在一对电极之间施加等于或高于阈值电压的电压时,MOS晶体管变短,使得第一和第二二极管都有效。 因此,当施加高于击穿电压的电压时,两个二极管吸收所施加的静电能量,这意味着一对电极之间的耐电压可以高于常规电极。