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公开(公告)号：US09533277B2
公开(公告)日：2017-01-03
申请号：US13824762
申请日：2011-10-26
CPC分类号： B01J10/00 , B01J19/006 , B01J19/2405 , B01J19/2415 , B01J2219/00094 , B01J2219/00247 , B01J2219/00772 , B01J2219/00779 , C10L3/108 , F28G1/06 , F28G3/08 , F28G7/00
摘要： To enable long-term continuous operation by preventing blocking of a reaction pipe line disposed in a multi-pipe or double-walled-pipe heat exchanger, provided is a device for producing gas hydrate including a multi-pipe or double-walled-pipe device 1 for generating gas hydrate having a reaction pipe line 2 for flowing raw material water w and raw material gas g and a coolant circulation region 3 for circulating a coolant c and thereby cooling the reaction pipe line 2, wherein a coil spring 4 extending in the longitudinal direction of the reaction pipe line 2 is provided in the reaction pipe line 2.
摘要翻译： 为了能够通过防止多管或双壁管式热交换器中的反应管路的堵塞来实现长期的连续运转，提供了一种生产包括多管或双壁管装置的气体水合物的装置 1，用于产生具有用于使原料水w和原料气体g流动的反应管线2的气体水合物和用于使冷却剂c循环的冷却剂循环区域3，从而冷却反应管线2，其中螺旋弹簧4在 反应管线2的长度方向设置在反应管线2中。
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52.发明授权Method for manufacturing a semiconductor device comprising single- and multi-component oxide semiconductor layers 有权包括单组分和多组分氧化物半导体层的半导体器件的制造方法公开(公告)号：US09034104B2
公开(公告)日：2015-05-19
申请号：US12968367
申请日：2010-12-15
IPC分类号： C30B1/02 , H01L21/02 , H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L21/02631 , H01L21/02554 , H01L21/02565 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
摘要翻译： 可以使用更大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在基板上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值，优选550℃至750℃）进行热处理，从表面向内部进行晶体生长，从而包括单组分氧化物半导体层 形成单晶区; 并且包括单晶区域的多成分氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。
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公开(公告)号：US09012804B2
公开(公告)日：2015-04-21
申请号：US13279905
申请日：2011-10-24
IPC分类号： B23K26/24 , B23K26/322 , B23K26/32 , B23K33/00
CPC分类号： B23K26/244 , B23K33/00 , B23K2101/18 , B23K2101/34 , B23K2103/04 , B23K2103/08
摘要： A laser lap welding method for parts made of galvanized steel sheet includes steps of: press-forming two parts from galvanized steel sheet such that the two parts include elongated joining regions to be welded together on mutually opposed surfaces thereof and a plurality of protrusions are formed on at least any one of the joining regions of the two parts at predetermined intervals in a longitudinal direction of the joining region; retaining the two parts in a state in which the joining regions are overlapped one on the other such that a gap according to a height of the protrusions is formed between the joining regions; and irradiating a laser onto one surface of the overlapped joining regions of the two parts such that the overlapped joining regions are fused and welded by energy of the laser, and zinc gas produced with fusing is discharged through the gap.
摘要翻译： 用于镀锌钢板的部件的激光搭接焊接方法包括以下步骤：从镀锌钢板上压制两部分，使得两部分包括在其相互相对的表面上被焊接在一起的细长接合区域，并且形成多个突起 在所述接合区域的纵向方向上以预定间隔在所述两个部分中的至少任一个接合区域中; 将两部分保持在接合区域彼此重叠的状态，使得在接合区域之间形成根据突起的高度的间隙; 并且将激光照射到两个部分的重叠接合区域的一个表面上，使得重叠的接合区域被激光的能量熔合和焊接，并且通过该熔融物产生的锌气体通过间隙排出。
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公开(公告)号：US08841577B2
公开(公告)日：2014-09-23
申请号：US13279775
申请日：2011-10-24
CPC分类号： B23K33/00 , B23K26/244 , B23K2101/18 , B23K2101/34 , B23K2103/04 , B23K2103/08
摘要： A laser lap welding method for parts made of galvanized steel sheet includes steps of press-forming two parts from galvanized steel sheet such that the two parts include elongated joining regions to be welded together on mutually opposed surfaces thereof and a plurality of protrusions are formed on at least any one of the joining regions of the two parts at predetermined intervals in a longitudinal direction of the joining region; retaining the two parts in a state in which the joining regions are overlapped one on the other such that a gap according to a height of the protrusions is formed between the joining regions; and irradiating a laser onto one surface of the overlapped joining regions of the two parts such that the overlapped joining regions are fused and welded by energy of the laser, and zinc gas produced with fusing is discharged through the gap.
摘要翻译： 用于镀锌钢板的部件的激光搭接焊接方法包括从镀锌钢板压制成形两部分的步骤，使得两部分包括在其相互相对的表面上被焊接在一起的细长接合区域，并且多个突起形成在 所述两个部分的接合区域中的至少任一个在所述接合区域的纵向方向上以预定的间隔; 将两部分保持在接合区域彼此重叠的状态，使得在接合区域之间形成根据突起的高度的间隙; 并且将激光照射到两个部分的重叠接合区域的一个表面上，使得重叠的接合区域被激光的能量熔合和焊接，并且通过该熔融物产生的锌气体通过间隙排出。
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公开(公告)号：US08766250B2
公开(公告)日：2014-07-01
申请号：US12950186
申请日：2010-11-19
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/10 , H01L29/41733
摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。
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公开(公告)号：US08728883B2
公开(公告)日：2014-05-20
申请号：US13297474
申请日：2011-11-16
CPC分类号： H01L29/06 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/36 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.
摘要翻译： 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。
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公开(公告)号：US08686425B2
公开(公告)日：2014-04-01
申请号：US13584840
申请日：2012-08-14
IPC分类号： H01L31/112 , H01L21/00
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
摘要翻译： 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。
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公开(公告)号：US08669556B2
公开(公告)日：2014-03-11
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。
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59.发明授权Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating layer which contains a halogen element 有权一种用于制造氧化物基半导体薄膜晶体管（TFT）的方法，该氧化物基半导体薄膜晶体管包括将氢或水分从氧化物半导体层扩散到包含卤素元素的相邻绝缘层中公开(公告)号：US08642412B2
公开(公告)日：2014-02-04
申请号：US12906175
申请日：2010-10-18
IPC分类号： H01L21/385
CPC分类号： H01L21/02664 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L23/564 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。
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公开(公告)号：USD697928S1
公开(公告)日：2014-01-21
申请号：US29371666
申请日：2011-06-28
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