Display device and method for manufacturing the same
    55.
    发明授权
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号:US08115883B2

    公开(公告)日:2012-02-14

    申请号:US12861190

    申请日:2010-08-23

    IPC分类号: G02F1/136

    摘要: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

    摘要翻译: 本发明的目的是提供具有优异显示特性的显示装置,其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管,其中使用金属膜形成栅电极层,源电极层和漏电极层,并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层,源电极层和漏电极层的像素晶体管,并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成,因此可以制造具有较高开口率的显示装置。

    Semiconductor device
    56.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08115206B2

    公开(公告)日:2012-02-14

    申请号:US11995224

    申请日:2006-07-20

    IPC分类号: H01L21/00

    摘要: It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

    摘要翻译: 本发明的目的是提供一种具有新的多重结构的晶体管,其中提高了操作特性和可靠性。 在具有多重结构的晶体管中,其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层,并且在两者之间形成高浓度杂质区 渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

    Display device
    57.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号:US08018403B2

    公开(公告)日:2011-09-13

    申请号:US11774401

    申请日:2007-07-06

    IPC分类号: G09G3/30

    CPC分类号: H01L27/3276 H01L27/12

    摘要: A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

    摘要翻译: 具有高清晰度的显示装置,其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸,并且形成为至少部分地彼此重叠,并且隔着绝缘层。

    LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME
    58.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号:US20110151603A1

    公开(公告)日:2011-06-23

    申请号:US13034157

    申请日:2011-02-24

    IPC分类号: H01L33/48

    摘要: A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.

    摘要翻译: 本发明的发光装置包括:形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层,形成在第一电极和第一绝缘层上,并且由选自氧化硅,氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。

    Light emitting device
    59.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07948171B2

    公开(公告)日:2011-05-24

    申请号:US11352185

    申请日:2006-02-10

    IPC分类号: H01L51/50 H01L51/52

    摘要: A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

    摘要翻译: 将提供一种有源矩阵发光器件的制造方法,其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于,与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外,金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层,含有有机化合物的层和第二电极层层叠在第一电极上。