QUANTUM-WELL-BASED SEMICONDUCTOR DEVICES
    59.
    发明申请
    QUANTUM-WELL-BASED SEMICONDUCTOR DEVICES 有权
    基于量子阱的半导体器件

    公开(公告)号:US20120298958A1

    公开(公告)日:2012-11-29

    申请号:US13571121

    申请日:2012-08-09

    摘要: Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a trench in the source and drain material region to provide a source region separated from a drain region. The method also includes forming a gate dielectric layer in the trench, between the source and drain regions; and forming a gate electrode in the trench, above the gate dielectric layer.

    摘要翻译: 描述了基于量子阱的半导体器件和形成量子阱基半导体器件的方法。 一种方法包括提供设置在衬底上方并包括量子阱沟道区的异质结构。 该方法还包括在量子阱沟道区上方形成源极和漏极材料区域。 该方法还包括在源极和漏极材料区域中形成沟槽以提供与漏极区域分离的源极区域。 该方法还包括在沟槽中,在源极和漏极区之间形成栅极电介质层; 以及在所述沟槽中形成栅电极,在所述栅介质层上方。