摘要:
Methods and apparatus for setting various terminations of a memory chip. In one embodiment, the memory chip includes a terminal, a termination circuit that can be connected to the terminal in order to terminate the terminal with a settable resistance value, a control command port for receiving a control command signal, and a control circuit that is connected to the termination circuit in order to set a resistance value as a function of a received control command signal.
摘要:
A supply voltage is needed in conventional electronic circuits used for processing signals, such as counting pulses. The supply voltage supplies the logic circuit components. Especially apparatuses which have to be operated over a longer period of time or/and in remote sites of use and are dependent upon a supply voltage are impaired with the dependency-related disadvantages, such as the necessity of expensive EEPROMs or significantly increased maintenance expenditure. The present invention relates to an electronic circuit which is provided with an input (5) for inputting at least one information signal, an energy means (2) for converting the energy that is present in the at least one information signal into a supply voltage, a control means (3) for generating at least one switch-on control signal when the information signal is input and a signal processing means (4) for storing information which is represented by the at least one information signal and/or for evaluating information which is represented by the at least one information signal and for storing the secondary information which is obtained by the evaluation. At least one ferroelectric flipflop (26) is used. The signal processing means (4) can be activated by the at least one switch-on control signal for evaluating and/or storing purposes. The at least one information signal can be or is the only energy source for the electronic circuit (1) during the evaluation and/or storing process.
摘要:
Before a write and/or read access to one of the memory cells is carried out, a security information stored in a security memory cell is read out. If the security information is characterized by a first logic state an error signal is generated. If the read-out security information is characterized by a second logic state the memory cell is accessed and a write access is carried out to the security memory cell during which a new security information to be he stored having the second logic state is written to the cell.
摘要:
An integrated memory has a multiplexer and a differential sense amplifier with a differential input. The differential sense amplifier is connected to three bit lines by the multiplexer. The multiplexer electrically connects the differential input of the sense amplifier to any two of the three bit lines connected to it respectively, in accordance with its activation.
摘要:
A decoder element is provided with an output, whereby an output signal with one of three different possible potentials is produced. The output signal may have a value of either a first potential, a second potential, and a third potential, where the second potential lies between the first potential and the third potential. The output signal is produced according to voltage values of input signals at terminal connections of the decoder element.
摘要:
A circuit configuration for reading a ferroelectric memory cell which has a ferroelectric capacitor is described. The memory cell is connected to a bit line. The circuit configuration provides a differential amplifier having a first differential amplifier input, a second differential amplifier input and a differential amplifier output. The first differential amplifier input is connected to the bit line, and the second differential amplifier input is connected to a reference signal. A first driver input of a first driver circuit is connected to the differential amplifier output, and a first driver output is connected to the bit line. The differential amplifier is fed back through the first driver circuit and regulates the bit line voltage to the voltage value of the reference signal.
摘要:
An integrated memory has a normal bit line for transferring data from or to normal memory cells connected to it, and also a normal sense amplifier, which is connected via a line to the normal bit line and connected to a data line and amplifies data read from the normal memory cells. Furthermore, the memory has a redundant sense amplifier for replacing the normal sense amplifier in the redundancy situation. The redundant sense amplifier is likewise connected on the one hand to the line and on the other hand to the data line and, in the redundancy situation, serves for amplifying the data read from the normal memory cells. A method for repairing an integrated memory is also provided.
摘要:
An integrated semiconductor memory capable of determining a chip temperature includes first control terminals for driving the integrated semiconductor memory with first control signals for performing a write access and second control terminals provided for performing a read access. The integrated semiconductor further includes a control circuit for controlling a write and read access. A temperature sensor for recording a chip temperature of the integrated semiconductor memory is connected to the control circuit. The control circuit is configured to generate a state of a third control signal at one of the first or at one of the second control terminals in a manner dependent on a temperature recorded by the temperature sensor.
摘要:
An apparatus interfaces a first circuit using a first supply voltage and a second circuit using a second supply voltage different from the first supply voltage. The apparatus includes a driver circuit having a driver network comprising driver supply voltage terminals connected to controllable switches. The controllable switches include resistive elements or are separated from resistive elements. A receiver circuit has a receiving network comprising a resistive element and receiver supply voltage terminals and a connection line connecting the driver circuit and the receiving circuit. The controllable switches have two switch configurations, a first switch configuration resulting in a high voltage on the connection line and a second switch configuration resulting in a low voltage on the connection line.
摘要:
An integrated circuit which is integrated in a housing having connecting pins fitted to the housing for connecting the housing to signal lines of an external circuit, each connecting pin connected by an associated wiring line to a contact pad of the circuit integrated in the housing, to exchange signals between the external circuit and the integrated circuit, where to minimize the line lengths of the associated wiring lines, the connecting pins to be connected to signal lines for high-frequency signals are fitted centrally to the housing.