公开(公告)号：US5603762A

公开(公告)日：1997-02-18

申请号：US441920

申请日：1995-05-16

申请人： Nobuyuki Kokune ,  Kazuaki Yamaguchi ,  Shoji Sogo ,  Ryuichi Ohuchi ,  Tatsuo Kawaguchi ,  Minoru Imaeda

发明人： Nobuyuki Kokune ,  Kazuaki Yamaguchi ,  Shoji Sogo ,  Ryuichi Ohuchi ,  Tatsuo Kawaguchi ,  Minoru Imaeda

IPC分类号： C30B19/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/30 ,  C30B35/00 ,  H01L21/368

CPC分类号： C30B19/02 ,  C30B29/30

摘要： A process is disclosed for producing a film of an oxide type single crystal on a substrate of such an oxide type single crystal by epitaxially growing the oxide type single crystal on the substrate through contacting the substrate onto a melt in an overcooled state. The substrate of the oxide type single crystal is contacted with the melt held in a first furnace, and the substrate of the oxide type single crystal is held inside a second furnace separated from said first furnace, and the temperature of the substrate is adjusted in the second furnace. An oxide type single crystal film-producing apparatus is also disclosed.

摘要翻译： 公开了一种通过在衬底上通过使衬底接触到过冷状态的熔体上来在衬底上外延生长氧化物型单晶而在这种氧化物型单晶的衬底上生产氧化物型单晶膜的工艺。 氧化物型单晶的基板与保持在第一炉中的熔体接触，氧化型单晶的基板保持在与所述第一炉分离的第二炉内，并且调节基板的温度 第二炉。 还公开了氧化物型单晶膜制造装置。

公开(公告)号：US07927981B2

公开(公告)日：2011-04-19

申请号：US12411507

申请日：2009-03-26

申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC分类号： H01L21/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

公开(公告)号：US20100224214A1

公开(公告)日：2010-09-09

申请号：US12716479

申请日：2010-03-03

申请人： Kimihisa KANEKO ,  Kunihiko Yoshioka ,  Minoru Imaeda

发明人： Kimihisa KANEKO ,  Kunihiko Yoshioka ,  Minoru Imaeda

IPC分类号： B08B3/12

CPC分类号： B08B3/12 ,  B08B3/048

摘要： The frequency and power of ultrasonic waves is adjusted to materialize the relation 0.04f−20.0≦P≦0.09f−7.5, wherein f (kHz) is the frequency of the ultrasonic waves and P (W/L) is the power per unit fluid volume obtained by dividing the power (W) of the ultrasonic waves by the volume (L) of a cleaning fluid. The discharge condition of the cleaning fluid by a pump is adjusted such that the proportion (C5) of the brightness of the fluid when 5 seconds has passed since the state wherein both an ultrasonic wave irradiation means and a bubble supply means are concurrently operating to the brightness of the fluid when no bubbles exist in the fluid is 0.75 or less. The coalition and crush of bubbles due to the irradiation of ultrasonic waves are suppressed, and the both actions can be utilized for a long period.

摘要翻译： 调整超声波的频率和功率，实现关系0.04f-20.0＆nlE; P＆nlE; 0.09f-7.5，其中f（kHz）是超声波的频率，P（W / L）是每单位功率 通过将超声波的功率（W）除以清洁液体积（L）而获得的流体体积。 调整清洗液的排出状态，使得当从超声波照射装置和气泡供给装置两者同时操作到另一个状态时，经过5秒的流体的亮度的比例（C5） 液体中没有气泡时流体的亮度为0.75以下。 抑制由于超声波照射引起的气泡的联合和粉碎，并且这两种动作可以长时间使用。

公开(公告)号：US20090246943A1

公开(公告)日：2009-10-01

申请号：US12411528

申请日：2009-03-26

申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC分类号： H01L21/20 ,  C23C16/503

CPC分类号： H01J37/32027 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/54 ,  H01J37/32018 ,  H01J37/32045 ,  H01J37/32568

摘要： A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.

摘要翻译： 通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜 的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。 不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。 此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。 结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

公开(公告)号：US20070209575A1

公开(公告)日：2007-09-13

申请号：US10594846

申请日：2005-03-30

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

IPC分类号： C30B9/00 ,  C30B17/00

CPC分类号： C30B9/10 ,  C30B29/406

摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

公开(公告)号：US20060257084A1

公开(公告)日：2006-11-16

申请号：US10542299

申请日：2003-12-22

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

IPC分类号： G02B6/00

CPC分类号： G02F1/3558 ,  G02F1/3775 ,  G02F2201/30

摘要： An optical waveguide device has a substrate composed of a nonlinear optical material and a periodically domain-inverted structure having the same composition as the nonlinear optical material, where the domain-inverted structure has a refractive index distribution relying on the domain-inverted structure.

摘要翻译： 光波导器件具有由非线性光学材料构成的基板和具有与非线性光学材料相同组成的周期性畴反转结构，其中畴反转结构具有依赖畴反转结构的折射率分布。

公开(公告)号：US20060120415A1

公开(公告)日：2006-06-08

申请号：US11329019

申请日：2006-01-10

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

IPC分类号： H01S3/10

CPC分类号： G02F1/377 ,  G02F2202/20

摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.

摘要翻译： 提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。 从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。 蓝色激光束“B”从平板光波导8发射。

公开(公告)号：US20060109542A1

公开(公告)日：2006-05-25

申请号：US10542424

申请日：2003-12-22

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Minoru Imaeda ,  Tatsuo Kawaguchi ,  Takashi Yoshino

IPC分类号： G02F2/02

CPC分类号： G02F1/3775 ,  G02F1/3558 ,  G02F1/365 ,  G02F2201/063

摘要： An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.

摘要翻译： 光波导器件包括：转换入射光的波长并发射转换的光的波导层。 在波导层中，设置脊波导和平板波导，平坦波导形成在脊状波导的两侧，凹槽部分插入其间。 波导层满足入射光的多模态，通过脊波导传播的光处于单一模式。

公开(公告)号：US06654529B1

公开(公告)日：2003-11-25

申请号：US09375132

申请日：1999-08-16

申请人： Tatsuo Kawaguchi ,  Minoru Imaeda

发明人： Tatsuo Kawaguchi ,  Minoru Imaeda

IPC分类号： G02B600

CPC分类号： G02F1/3558 ,  G02F1/365 ,  G02F1/3775

摘要： A method for producing an optical waveguide part includes the steps of preparing a ferroelectric single crystalline substrate having a polarization-axis substantially parallel to a main surface thereof and having a given ferroelectric domain-inverted pattern, and epitaxially growing a ferroelectric single crystalline film on the ferroelectric single crystalline substrate. The ferroelectric domain-inverted pattern is thereby transcribed from the substrate into the ferroelectric single crystalline film to form a ferroelectric domain-inverted structure therein.

摘要翻译： 一种制造光波导部件的方法包括以下步骤：制备具有基本上平行于其主表面并且具有给定的铁电畴反转图案的偏振轴的铁电单晶基板，并且在其上外延生长铁电单晶膜 铁电单晶基板。 因此，铁电畴反转图案从基板转印成铁电单晶膜，在其中形成铁电畴畴反转结构。

公开(公告)号：US06631231B2

公开(公告)日：2003-10-07

申请号：US09810516

申请日：2001-03-16

申请人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Minoru Imaeda ,  Kenji Aoki ,  Osamu Mitomi

发明人： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Minoru Imaeda ,  Kenji Aoki ,  Osamu Mitomi

IPC分类号： G02B600

CPC分类号： G02F1/3775 ,  G02F1/3525 ,  G02F2201/07

摘要： An optical waveguide element includes a three-dimensional optical waveguide of a bulky non-linear optical crystal, a substrate, and a joining layer made of an amorphous material. The substrate is joined to the optical waveguide via the joining layer.

摘要翻译： 光波导元件包括笨重的非线性光学晶体的三维光波导，基板和由非晶材料制成的接合层。 基板经由接合层与光波导接合。