摘要:
Disclosed herein is a reliable laminated optical element that is a hybrid optical element obtained by laminating an optical resin layer on an optical substrate such as a glass substrate, the optical resin layer being less likely to be separated from the optical substrate even under high temperature and high humidity conditions.The laminated optical element comprises an optical substrate 1 made of an optical material, an intermediate layer 2 provided on the optical substrate 1, and an optical resin layer 3 provided on the intermediate layer 2. The optical resin layer 3 is made of a resin composed of an organometallic polymer having an -M-O-M- bond (M is a metal atom), a metal alkoxide and/or a hydrolysate thereof having only one hydrolyzable group, and an organic polymer having a urethane bond and a methacryloxy group or an acryloxy group. The intermediate layer 2 is obtained by dispersing metal oxide microparticles in a matrix resin composed of a metal alkoxide having a radical polymerizable group and a hydrolyzable group and/or a hydrolysate thereof.
摘要:
Disclosed herein is an optical waveguide comprising a core layer to be an optical transmission region, an upper clad layer and a lower clad layer covering the core layer, in which the core layer, the upper clad layer and the lower clad layer are formed from resin materials, characterized in that a microlens made of a material having a higher refractive index than that of a material constituting said core layer is disposed in the vicinity of an end face of said core layer.
摘要:
A curable organometallic composition containing an organometallic polymer having an -M-O-M- bond (M denotes a metal atom) and an aryl group, and a fluorene-based compound having an acryloyl or methacryloyl group, an organometallic polymer obtained by curing the composition and an optical component using the material.
摘要:
An organic-inorganic composite forming material which contains an organometallic polymer having an -M-O-M- bond (M denotes a metal atom), an acrylic monomer or oligomer having a hydrophilic group and inorganic particles. Preferably, the organometallic polymer has Si in the place of M and is obtained via hydrolysis and polycondensation of trialkoxysilane having a photo- or thermally-polymerizable group and dialkoxysilane having a phenyl group.
摘要:
A gradient-index lens is structured by a multilayer film that includes therein a plurality of layers each of which has different refractive index and layer thickness from the other.
摘要:
An optical branch device, comprising: a branch portion having a first branch waveguide extended linearly and continuously from a waveguide in a basis portion, and second and third branch waveguides extended in the directions farther from the first branch waveguide in such a manner that the first branch waveguide is interposed between the second and third branch waveguides; a parallel portion in which the second and third branch waveguides are positioned in parallel to the first branch waveguide; and a divergent portion in which the second and third branch waveguides are extended gradually farther from the first branch waveguide; wherein the interval pitch P (μm), in the transverse direction, between the first, second and third branch waveguides in the parallel portion and the refractive index difference (Δn) between the core and the clad are set in such a manner that C satisfies a relationship of C=0.5±0.2 wherein C is calculated by substituting P and Δn for an equation of C=Δn×P2.
摘要:
A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.
摘要:
An AlGaN buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, an MQW active layer, and a p-AlGaN cladding layer are formed in this order on a sapphire substrate. A ridge portion is formed in the p-AlGaN cladding layer, and a p-GaN cap layer is formed on an upper surface of the ridge portion. An n-AlGaN first regrown low-temperature buffer layer and an n-AlGaN current blocking layer are formed in this order on a flat portion and on side surfaces of the ridge portion in the p-AlGaN cladding layer. A p-AlGaN second regrown low-temperature buffer layer and a p-GaN contact layer are formed on the n-AlGaN current blocking layer and on the upper surface of the ridge portion.
摘要:
A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.
摘要:
A weft picking system for an air jet loom is provided with a microcomputer as a controller. The weft picking system comprises a weft traction device including a pair of rollers, one of which is driven by an inverter motor. A weft yarn fed from a weft measuring and storing device can be placed between the rollers to be drawn toward a weft posture regulating nozzle. The weft posture regulating nozzle is arranged to project the weft yarn into the shed of warp yarns and regulates the posture of the weft yarn under the influence of air jet ejected from the nozzle and from a plurality of sub-nozzles. The rollers always rotate during a weaving operation of the loom. A change-over device is provided to change the weft yarn from a first state of being placed between the rollers to a second state of separating from the rollers or vice versa. A weft yarn slackened portion is unavoidably formed between the weft traction device and the weft posture regulating nozzle, due to a temporary difference in the tractive speed between the weft posture regulating nozzle and the weft traction device. A slackened portion deforming device is disposed between the weft traction device and the weft posture regulating nozzle to effectively deform the slackened portion in a manner to smoothen the slackened portion enough as to prevent any trouble in the weaving operation and any defects in the woven fabric.