公开(公告)号：US06759139B2

公开(公告)日：2004-07-06

申请号：US10081842

申请日：2002-02-25

申请人： Tatsuya Kunisato ,  Nobuhiko Hayashi ,  Hiroki Ohbo ,  Masayuki Hata ,  Tsutomu Yamaguchi

发明人： Tatsuya Kunisato ,  Nobuhiko Hayashi ,  Hiroki Ohbo ,  Masayuki Hata ,  Tsutomu Yamaguchi

IPC分类号： H01L2912

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02387 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/2003 ,  H01S5/32341 ,  Y10T428/12528 ,  Y10T428/24802

摘要： A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.

摘要翻译： 获得能够在厚度较小的底层上形成由不同于下层的材料构成的位错密度低的氮化物系半导体元件的氮化物系半导体元件。 这种氮化物基半导体元件包括以规定间隔形成的多个掩模层，以与底层的上表面接触，同时部分地暴露形成在底层的上表面上的下层和氮化物类半导体层， 掩模层，由与底层不同的材料组成。 相邻掩模层之间的最小距离小于位于相邻掩模层之间的底层的暴露部分的宽度。

公开(公告)号：US06734503B2

公开(公告)日：2004-05-11

申请号：US10211340

申请日：2002-08-05

申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

IPC分类号： H01L2701

CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。

公开(公告)号：US07279344B2

公开(公告)日：2007-10-09

申请号：US11518174

申请日：2006-09-11

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.

摘要翻译： 通过在不进行长蚀刻处理的情况下形成具有优异的结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 这种氮化物基半导体元件及其方法包括在底层的基本平坦的上表面上形成具有凹部的掩模层，以部分地暴露底层的上表面。 在掩模层的凹部上形成空隙的同时，在底层的露出部和掩模层上横向生长氮化物系半导体层。 因此，横向生长的氮化物基半导体层的应变如此松弛，从而提高了氮化物基半导体层的结晶度。

公开(公告)号：US07109530B2

公开(公告)日：2006-09-19

申请号：US10796154

申请日：2004-03-10

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing extended etching. The nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. During laterally growth, strain is relaxed thereby improving crystallinity. The underlayer is formed in a substantially flat shape, thereby avoiding extended etching.

摘要翻译： 通过在不进行延伸蚀刻的情况下制造具有优异结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面;形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 在横向生长期间，松弛应变，从而提高结晶度。 底层形成为大致平坦的形状，从而避免延长蚀刻。

公开(公告)号：US06713845B2

公开(公告)日：2004-03-30

申请号：US10084050

申请日：2002-02-28

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L2358

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. Thus, the nitride-based semiconductor layer is formed while forming the void on the recess portion of the mask layer when laterally grown on the mask layer, whereby strain of the laterally grown nitride-based semiconductor layer is so relaxed that the nitride-based semiconductor layer is improved in crystallinity. The underlayer is formed in a substantially flat shape, whereby no etching may be performed over a long time dissimilarly to a case of forming recess portions on an underlayer consisting of a nitride-based semiconductor or the like.

摘要翻译： 通过获得具有优异结晶度的氮化物系半导体层，而不进行长时间蚀刻工艺，可以获得元素特性优异的氮化物系半导体元件。 该氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面，形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 因此，当在掩模层上横向生长时，在掩模层的凹部上形成空隙的同时形成氮化物基半导体层，由此横向生长的氮化物基半导体层的应变如此松弛，使得氮化物基半导体 层的结晶度提高。 底层形成为大致平坦的形状，由此与在由氮化物类半导体等构成的基底上形成凹部的情况不同，长时间不进行蚀刻。

公开(公告)号：US20070001192A1

公开(公告)日：2007-01-04

申请号：US11518174

申请日：2006-09-11

申请人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

发明人： Nobuhiko Hayashi ,  Tatsuya Kunisato ,  Hiroki Ohbo ,  Tsutomu Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. Thus, the nitride-based semiconductor layer is formed while forming the void on the recess portion of the mask layer when laterally grown on the mask layer, whereby strain of the laterally grown nitride-based semiconductor layer is so relaxed that the nitride-based semiconductor layer is improved in crystallinity. The underlayer is formed in a substantially flat shape, whereby no etching may be performed over a long time dissimilarly to a case of forming recess portions on an underlayer consisting of a nitride-based semiconductor or the like.

摘要翻译： 通过获得具有优异结晶度的氮化物系半导体层，而不进行长时间蚀刻工艺，可以获得元素特性优异的氮化物系半导体元件。 该氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面，形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 因此，当在掩模层上横向生长时，在掩模层的凹部上形成空隙的同时形成氮化物基半导体层，由此横向生长的氮化物基半导体层的应变如此松弛，使得氮化物基半导体 层的结晶度提高。 底层形成为大致平坦的形状，由此与在由氮化物类半导体等构成的基底上形成凹部的情况不同，长时间不进行蚀刻。

公开(公告)号：US20080248603A1

公开(公告)日：2008-10-09

申请号：US12155804

申请日：2008-06-10

申请人： Tatsuya Kunisato ,  Hiroki Ohbo ,  Nobuhiko Hayashi ,  Takashi Kano

发明人： Tatsuya Kunisato ,  Hiroki Ohbo ,  Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced.

摘要翻译： 一种制备氮化物半导体的方法，所述氮化物半导体能够通过少量的生长形成具有少量位错的氮化物基半导体层以及在基板的上表面上具有优异结晶度的解吸所产生的少量晶体缺陷 提出步骤。 制备氮化物基半导体的方法包括以下步骤：在衬底的上表面上形成掩模层以部分地暴露衬底的上表面，在衬底的上表面的暴露部分上形成缓冲层， 掩模层的上表面，然后生长氮化物基半导体层。 因此，在掩模层上横向生长的氮化物基半导体层的最外生长表面不与掩模层接触。 因此，从氮化物系半导体层的最外侧生长面几乎不发生解吸，从而形成缺陷少的氮化物系半导体层。 此外，掩模层直接形成在基板上，由此氮化物基半导体层的生长步骤的数量减少。

公开(公告)号：US06720196B2

公开(公告)日：2004-04-13

申请号：US10138420

申请日：2002-05-06

申请人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

发明人： Tatsuya Kunisato ,  Yasuhiko Nomura ,  Takashi Kano ,  Hiroki Ohbo ,  Masayuki Hata

IPC分类号： H01L2100

CPC分类号： H01L21/02458 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The number of dislocations is reduced by a single lateral growth and is further reduced due to a dislocation loop effect by the quantum dots, without repeating lateral growth.

摘要翻译： 通过在下层的上表面上横向生长氮化物基半导体层并在横向生长的氮化物基半导体层上形成量子点，形成具有低位错密度的薄氮化物基半导体层。 位错的数量由于单个横向生长而减少，并且由于量子点的位错环效应而进一步减小，而不会重复横向生长。

公开(公告)号：US07829900B2

公开(公告)日：2010-11-09

申请号：US12071978

申请日：2008-02-28

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

公开(公告)号：US20050263778A1

公开(公告)日：2005-12-01

申请号：US11195637

申请日：2005-08-03

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01S5/02 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。