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    BACKSIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED CONTACT AREA
    51.
    发明申请
    BACKSIDE ILLUMINATED IMAGE SENSOR WITH IMPROVED CONTACT AREA 审中-公开

    公开(公告)号：US20180240833A1

    公开(公告)日：2018-08-23

    申请号：US15439793

    申请日：2017-02-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dyson H. Tai ,  Cunyu Yang ,  Gang Chen ,  Jing Ye ,  Xi-Feng Gao ,  Jiaming Xing

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    Abstract: An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD
    53.
    发明申请
    RESONANT-FILTER IMAGE SENSOR AND ASSOCIATED FABRICATION METHOD 审中-公开

    公开(公告)号：US20170373109A1

    公开(公告)日：2017-12-28

    申请号：US15195926

    申请日：2016-06-28

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

    IPC: H01L27/146

    CPC classification number: H01L27/14625 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14685

    Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

    Through-semiconductor-via capping layer as etch stop layer
    55.
    发明授权
    Through-semiconductor-via capping layer as etch stop layer 有权

    公开(公告)号：US09773829B2

    公开(公告)日：2017-09-26

    申请号：US15014787

    申请日：2016-02-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

    Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.

    Hard mask as contact etch stop layer in image sensors
    58.
    发明授权
    Hard mask as contact etch stop layer in image sensors 有权
    硬掩模作为图像传感器中的接触蚀刻停止层

    公开(公告)号：US09484373B1

    公开(公告)日：2016-11-01

    申请号：US14944772

    申请日：2015-11-18

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

    IPC: H01L31/18 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

    Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material, and a transfer gate disposed adjacent to an edge of the photodiode. A dielectric layer is also disposed between the semiconductor material and the transfer gate. A hard mask is disposed in an encapsulation layer and lateral bounds of the hard mask are coextensive with lateral bounds of the transfer gate. A first contact trench extends through the encapsulation layer and through the dielectric layer and contacts the semiconductor material. A second contact trench extends through the encapsulation layer and through the hard mask and contacts the transfer gate.

    Abstract translation: 图像传感器包括具有设置在半导体材料中的光电二极管的半导体材料和邻近光电二极管的边缘设置的传输门。 电介质层也设置在半导体材料和传输门之间。 硬掩模设置在封装层中，硬掩模的横向边界与传输门的横向边界共同延伸。 第一接触沟槽延伸穿过封装层并穿过电介质层并接触半导体材料。 第二接触沟槽延伸穿过封装层并穿过硬掩模并接触传输门。

    Storage transistor with optical isolation
    59.
    发明授权
    Storage transistor with optical isolation 有权
    具有光隔离功能的存储晶体管

    公开(公告)号：US09472587B2

    公开(公告)日：2016-10-18

    申请号：US14606416

    申请日：2015-01-27

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yuanwei Zheng ,  Xianmin Yi ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

    IPC: H01L27/14 ,  H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14643

    Abstract: A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to the storage region, and a dielectric layer is disposed between the storage region and the gate electrode. An optical isolation structure is disposed in the interlayer and the optical isolation structure extends from a top side of the interlayer to the gate electrode. The optical isolation structure is also adjoining a perimeter of the gate electrode and contacts the gate electrode. A capping layer is disposed proximate to the top side of the interlayer and the capping layer caps a volume encircled by the optical isolation structure.

    Abstract translation: 具有存储区域的存储晶体管设置在半导体材料中。 栅电极设置在靠近存储区的中间层的底侧，并且介电层设置在存储区和栅电极之间。 光隔离结构设置在中间层中，光隔离结构从中间层的顶侧延伸到栅电极。 光学隔离结构也邻接栅电极的周边并与栅电极接触。 封盖层靠近中间层的顶侧设置，并且封盖层覆盖由光学隔离结构包围的体积。

    Blue enhanced image sensor
    60.
    发明授权
    Blue enhanced image sensor 有权
    蓝色增强图像传感器

    公开(公告)号：US09455291B2

    公开(公告)日：2016-09-27

    申请号：US14601010

    申请日：2015-01-20

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

    IPC: H01L31/00 ,  H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

    Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

    Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

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