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公开(公告)号：US06607924B2
公开(公告)日：2003-08-19
申请号：US09871387
申请日：2001-05-31
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
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52.发明授权One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells 失效一次性可编程存储器，使用保险丝/反熔丝和垂直取向的熔丝单元存储单元公开(公告)号：US06584029B2
公开(公告)日：2003-06-24
申请号：US09924577
申请日：2001-08-09
IPC分类号： G11C700
CPC分类号： H01L23/5252 , G11C13/0004 , G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A one-time programmable (“OTP”) memory includes one or more memory arrays stacked on top of each other. The OTP memory array is a cross-point array where unit memory cells are formed at the cross-points. The unit memory cell may include a fuse and an anti-fuse in series with each other or may include a vertically oriented fuse. Programming the memory may include the steps of selecting unit memory cells, applying a writing voltage such that critical voltage drop across the selected cells occur. This causes the anti-fuse of the cell to break down to a low resistance. The low resistance of the anti-fuse causes a high current pulse to be delivered to the fuse, which in turn melts the fuse to an open state. Reading the memory may include the steps of selecting unit memory cells for reading, applying a reading voltage to the selected memory cells and measuring whether current is present or not. Equipotential sensing may be used to read the memory.
摘要翻译： 一次性可编程（“OTP”）存储器包括堆叠在彼此之上的一个或多个存储器阵列。 OTP存储器阵列是在交叉点处形成单位存储单元的交叉点阵列。 单元存储单元可以包括彼此串联的保险丝和反熔丝，或者可以包括垂直定向的保险丝。 对存储器进行编程可以包括选择单元存储器单元，施加写入电压以使得跨所选单元格出现临界电压降的步骤。 这使得电池的反熔丝分解成低电阻。 反熔丝的低电阻导致高电流脉冲被输送到保险丝，熔丝将熔丝熔化成打开状态。 读取存储器可以包括以下步骤：选择用于读取的单元存储单元，向所选存储单元施加读取电压并测量是否存在电流。 等电位感测可用于读取存储器。
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53.发明授权One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same 有权一次性可编程单元存储单元基于垂直定向的保险丝和二极管以及一次性可编程存储器公开(公告)号：US06567301B2
公开(公告)日：2003-05-20
申请号：US09924500
申请日：2001-08-09
申请人： Thomas C. Anthony , Lung T. Tran
发明人： Thomas C. Anthony , Lung T. Tran
IPC分类号： G11C1136
CPC分类号： G11C17/16
摘要： A one-time programmable unit memory cell includes a vertically oriented fuse and an diode in series. Within the vertically oriented fuse, the current flow is substantially vertical, i.e. perpendicular to the plane of the substrate. Also, the vertically oriented fuse is placed between top and bottom conductors. This vertical placement of the elements helps to increase density of memory devices built using these unit cells. Also, vertically oriented fuses consume very little lateral area, which helps the density even further. The unit memory cell has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite because the vertically oriented fuse is left intact. In the written state, the resistance is infinite because the fuse is blown open. The cell may be programmed by applying a critical voltage across the cell enough to cause the fuse to become open. The states are detected by applying a read voltage across the memory cell. If the is not programmed, then a measurable amount flows. Otherwise, no current flows due to the open circuit. A cross-point memory array may be formed with unit memory cells formed at each cross point. With addition of read and write circuitry, the memory array maybe used as memory. However, multiple arrays may be stacked to form high density memory devices.
摘要翻译： 一次性可编程单元存储单元包括垂直取向的熔丝和串联的二极管。 在垂直取向的熔丝内，电流大致垂直于垂直于衬底的平面。 此外，垂直定向的熔断器放置在顶部和底部导体之间。 元件的这种垂直放置有助于增加使用这些单元电池构建的存储器件的密度。 此外，垂直取向的保险丝消耗的横向面积很小，这进一步有助于密度。 单位存储单元具有两种状态，初始状态和写入（编程）状态。 在初始状态下，电池的电阻是有限的，因为垂直取向的保险丝保持原样。 在写入状态下，电阻是无限大的，因为保险丝熔断了。 可以通过在电池上施加足够的临界电压以使熔丝变得开放来对单元进行编程。 通过在存储器单元上施加读取电压来检测状态。 如果没有编程，那么可测量的流量。 否则，由于开路，电流不流动。 交叉点存储器阵列可以形成在每个交叉点处形成的单位存储单元。 通过添加读写电路，存储器阵列可以用作存储器。 然而，可以堆叠多个阵列以形成高密度存储器件。
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54.发明授权Improved magnetoresistive transducer with substantially perpendicular easy axis 失效改进的磁阻换能器具有基本垂直的容易轴
公开(公告)号：US5307226A
公开(公告)日：1994-04-26
申请号：US894415
申请日：1992-06-05
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/3954
摘要： A magnetoresistive transducer includes at least one magnetoresistive element having a transverse easy axis. The use of a transverse easy axis prevents magnetic domains from forming in the magnetoresistive elements and results in a noise-free device. Various techniques for producing a transverse easy axis include the use of stress, and a magneto strictive material, during the formation of the element to orient the anisotropy of the element transverse to orient the anisotropy of the element transverse to the element, formation of the element in the presence of a magnetic field, high temperature anneal of the element, or any other method of forming the element with a prebiased state.
摘要翻译： 磁阻换能器包括至少一个具有横向容易轴的磁阻元件。 使用横向易轴防止在磁阻元件中形成磁畴，并导致无噪声的装置。 用于产生横向容易轴的各种技术包括在形成元件期间使用应力和磁致伸缩材料，以横向定向元件的各向异性以定向横向于元件的元件的各向异性，元件的形成 在存在磁场的情况下，元件的高温退火，或以预偏置状态形成元件的任何其它方法。
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公开(公告)号：US5296987A
公开(公告)日：1994-03-22
申请号：US894389
申请日：1992-06-05
申请人： Thomas C. Anthony , James A. Brug
发明人： Thomas C. Anthony , James A. Brug
CPC分类号： G11B5/3906 , G11B5/3954
摘要： A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.
摘要翻译： 一种用于减少双条磁阻记录头中的巴克豪森噪声的方法。 控制底部导体的形貌，具体来说，轨道边缘处的导体侧壁角度定义为距离衬底平面小于45度。 以这种方式限制导体侧壁轮廓消除了磁畴成核的来源。
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56.发明授权
公开(公告)号：US4853080A
公开(公告)日：1989-08-01
申请号：US284166
申请日：1988-12-14
申请人： Thomas C. Anthony
发明人： Thomas C. Anthony
CPC分类号： G11B5/3163 , C23F4/00 , G03F7/094 , H05K3/143
摘要： A lift-off process for patterning bottom shields used in thin film magnetic recording heads. The lift-off process comprises the steps of depositing a first layer of resist material (22) on a substrate (20) and hard baking the resist material (22). A transfer layer (24) is deposited over the first layer of resist material (22) and a second layer of resist material (26) is deposited on top of the transfer layer (24). The second layer of resist material (24) is then patterned and developed. The patterned structure is then etched to form a mask structure wherein the transfer layer (24) overhangs the first layer of resist material (22). An adhesion layer (30) and an amorphous magnetic alloy material (32) are then sequentially deposited on the exposed surface of the substrate (20). The amorphous magnetic alloy material (32) is sputter deposited at a pressure of about 3.4 mT, a condition that resists the stress in the amorphous alloy material to less than 10.sup.9 dynes per square centimeter. Low stress is required to preserve the integrity of the mask structure. The mask layers and unwanted amorphous allow material (32) are removed using ultrasonic agitation in acetone. This process results in a shield pattern having tapered sidewalls which enhance the reliability of subsequently deposited conductor metallization.
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57.发明授权Display device including variable optical element and programmable resistance element 失效显示装置包括可变光学元件和可编程电阻元件公开(公告)号：US07557782B2
公开(公告)日：2009-07-07
申请号：US10969085
申请日：2004-10-20
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G3/2011 , G09G3/3216 , G09G3/3283 , G09G2300/06 , G09G2300/0809 , G09G2300/0885 , G09G2310/0205 , G09G2310/0262
摘要： A display element includes a variable optical element that changes appearance in response to changes in current, and a programmable resistance in series with the variable optical element. The resistance of the programmable resistance decreases in response to a first current in a first direction. The resistance of the programmable resistance increases in response to a second current in a second direction.
摘要翻译： 显示元件包括响应于电流变化而改变外观的可变光学元件和与可变光学元件串联的可编程电阻。 可编程电阻的电阻响应于第一方向上的第一电流而减小。 可编程电阻的电阻响应于第二方向上的第二电流而增加。
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公开(公告)号：US20080299680A1
公开(公告)日：2008-12-04
申请号：US12187833
申请日：2008-08-07
IPC分类号： H01L21/00
CPC分类号： G11C11/15
摘要： Methods for creating a memory device can include depositing a sense layer, patterning the sense layer to form a plurality of magnetic data cells, depositing a separation layer over the plurality of data cells, depositing a reference layer over the separation layer, and patterning the reference layer to form an elongated magnetic reference cell wherein the elongated magnetic reference cell extends uninterrupted along more than one of the plurality of magnetic data cells.
摘要翻译： 用于创建存储器件的方法可以包括沉积感测层，图案化感测层以形成多个磁性数据单元，在多个数据单元上沉积分离层，在分离层上沉积参考层， 以形成细长的磁性参考单元，其中细长磁性参考单元沿多个磁性数据单元中的一个以上不间断地延伸。
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公开(公告)号：US07391641B2
公开(公告)日：2008-06-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas C. Anthony
发明人： Manish Sharma , Lung Tran , Thomas C. Anthony
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译： 包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过 来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。 第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。
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公开(公告)号：US07027319B2
公开(公告)日：2006-04-11
申请号：US10465714
申请日：2003-06-19
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： Methods and apparatuses are disclosed for retrieving data stored in a magnetic integrated memory. In one embodiment, the method includes applying a perturbing hard-axis magnetic field to a magnetic element in a magnetic integrated memory and detecting a change in an electrical parameter caused by said perturbing hard-axis magnetic field.
摘要翻译： 公开了用于检索存储在磁性集成存储器中的数据的方法和装置。 在一个实施例中，该方法包括将扰动的硬轴磁场施加到磁性集成存储器中的磁性元件，并检测由所述扰动的硬轴磁场引起的电参数的变化。
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