公开(公告)号：US08102691B2

公开(公告)日：2012-01-24

申请号：US12144705

申请日：2008-06-24

申请人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

发明人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/14 ,  Y10S977/933

摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。

公开(公告)号：US08043732B2

公开(公告)日：2011-10-25

申请号：US12268638

申请日：2008-11-11

申请人： Paul E. Anderson ,  Song S. Xue

发明人： Paul E. Anderson ,  Song S. Xue

IPC分类号： G11B5/39 ,  H01F10/08 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

摘要： Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

摘要翻译： 磁性隧道结电池和制造磁性隧道结电池的方法，其包括在电池的至少铁磁性自由层附近延伸的径向保护层。 径向保护层可以沿着电池层的厚度，沉积方法，材料组成和/或程度具体选择，以增强自由层的有效磁性，包括有效的矫顽力，有效的磁各向异性，磁矩中的有效分散 ，或有效的自旋极化。

公开(公告)号：US20110193148A1

公开(公告)日：2011-08-11

申请号：US13088832

申请日：2011-04-18

申请人： Yang Li ,  Insik Jin ,  Harry Liu ,  Song S. Xue ,  Shuiyuan Huang ,  Michael X. Tang

发明人： Yang Li ,  Insik Jin ,  Harry Liu ,  Song S. Xue ,  Shuiyuan Huang ,  Michael X. Tang

IPC分类号： H01L29/82

CPC分类号： H01L29/7881 ,  H01L27/11521 ,  H01L29/66825

摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.

摘要翻译： 晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。 根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

公开(公告)号：US20110090733A1

公开(公告)日：2011-04-21

申请号：US12974679

申请日：2010-12-21

申请人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

发明人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC分类号： G11C11/15

CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

摘要翻译： 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

公开(公告)号：US07881098B2

公开(公告)日：2011-02-01

申请号：US12198416

申请日：2008-08-26

申请人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

发明人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

IPC分类号： G11C11/00

CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line and a magnetic tunnel junction data cell electrically coupled between a read bit line and a read source line. A write current passing through the giant magnetoresistance cell switches the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell. The magnetic tunnel junction data cell is read by a read current passing though the magnetic tunnel junction data cell.

摘要翻译： 存储单元包括电耦合在写位线和写入源线之间的电磁耦合单元和电耦合在读取位线和读取源极线之间的磁性隧道结数据单元的巨磁电阻单元。 通过巨磁电阻单元的写入电流将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁阻单元的静磁耦合在高电阻状态和低电阻状态之间切换。 磁隧道结数据单元由通过磁性隧道结数据单元的读取电流读取。

公开(公告)号：US07852663B2

公开(公告)日：2010-12-14

申请号：US12125975

申请日：2008-05-23

申请人： Haiwen Xi ,  Yang Li ,  Song S. Xue

发明人： Haiwen Xi ,  Yang Li ,  Song S. Xue

IPC分类号： G11C11/00

CPC分类号： H03K19/173 ,  G11C11/161 ,  G11C11/1673

摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.

摘要翻译： 具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。 通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。 输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。 输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。 在一些实施例中，输出元件可以具有多于一个的自由层。

公开(公告)号：US07825397B2

公开(公告)日：2010-11-02

申请号：US12125970

申请日：2008-05-23

申请人： Haiwen Xi ,  Song S. Xue

发明人： Haiwen Xi ,  Song S. Xue

IPC分类号： H01L45/00

CPC分类号： H01L45/16 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/144

摘要： Random access memory cells having a short phase change bridge structure and methods of making the bridge structure via shadow deposition. The short bridge structure reduces the heating efficiency needed to switch the logic state of the memory cell. In one particular embodiment, the memory cell has a first electrode and a second electrode with a gap therebetween. The first electrode has an end at least partially non-orthogonal to the substrate and the second electrode has an end at least partially non-orthogonal to the substrate. A phase change material bridge extends over at least a portion of the first electrode, over at least a portion of the second electrode, and within the gap. An insulative material encompasses at least a portion of the phase change material bridge.

摘要翻译： 具有短相变桥结构的随机存取存储单元和通过阴影沉积制造桥结构的方法。 短桥结构降低了切换存储单元的逻辑状态所需的加热效率。 在一个特定实施例中，存储单元具有第一电极和在其之间具有间隙的第二电极。 第一电极具有至少部分地与衬底非正交的端部，并且第二电极具有至少部分地与衬底非正交的端部。 相变材料桥在第一电极的至少一部分上延伸到第二电极的至少一部分上，并在间隙内延伸。 绝缘材料包含相变材料桥的至少一部分。

公开(公告)号：US07786463B2

公开(公告)日：2010-08-31

申请号：US12123685

申请日：2008-05-20

申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

IPC分类号： H01L45/00

CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。

公开(公告)号：US20100037102A1

公开(公告)日：2010-02-11

申请号：US12269535

申请日：2008-11-12

申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Alan Xuguang Wang ,  Song S. Xue

发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Alan Xuguang Wang ,  Song S. Xue

IPC分类号： G06F11/16 ,  G06F11/00 ,  G06F12/08 ,  G06F12/00

CPC分类号： G11C29/846

摘要： Various embodiments of the present invention are generally directed to an apparatus and method for providing a fault-tolerant non-volatile buddy memory structure, such as a buddy cache structure for a controller in a data storage device. A semiconductor memory array of blocks of non-volatile resistive sense memory (RSM) cells is arranged to form a buddy memory structure comprising a first set of blocks in a first location of the array and a second set of blocks in a second location of the array configured to redundantly mirror the first set of blocks. A read circuit decodes a fault map which identifies a defect in a selected one of the first and second sets of blocks and concurrently outputs data stored in the remaining one of the first and second sets of blocks responsive to a data read operation upon said buddy memory structure.

摘要翻译： 本发明的各种实施例通常涉及用于提供容错非易失性伙伴存储器结构的装置和方法，例如用于数据存储设备中的控制器的伙伴高速缓存结构。 布置非易失性电阻式感测存储器（RSM）单元块的半导体存储器阵列以形成伙伴存储器结构，其包括阵列的第一位置中的第一组块和位于阵列的第二位置的第二组块 阵列被配置为冗余地镜像第一组块。 读取电路解码故障映射，其识别所述第一和第二组块中的所选择的一个中的缺陷，并响应于所述好友存储器上的数据读取操作，同时输出存储在第一组和第二组中的剩余块中的数据 结构体。

公开(公告)号：US20100033872A1

公开(公告)日：2010-02-11

申请号：US12496505

申请日：2009-07-01

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song S. Xue

IPC分类号： G11B5/82 ,  B05D5/12

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

摘要： A bit patterned media (BPM) includes many magnetic dots arranged in tracks on a substrate. The magnetic dots each have a hard magnetic core, a soft magnetic cladding surrounding the core and a thin non-magnetic layer that separates the hard magnetic core from the soft magnetic ring. The soft magnetic cladding stabilizes the magnetization at the edges of the hard magnetic core to improve the signal to noise ratio of the magnetic dots. The soft magnetic rings also narrow the magnetic field of the dots which reduces the space requirements and allows more dots to be placed on the substrate.

摘要翻译： 位图案介质（BPM）包括布置在基板上的轨道中的许多磁点。 磁点各自具有硬磁芯，围绕芯的软磁性包层以及将硬磁芯与软磁环分离的薄的非磁性层。 软磁性包层使硬磁芯的边缘处的磁化稳定，以提高磁点的信噪比。 软磁环还使点的磁场变窄，这减小了空间要求，并允许更多的点放置在基板上。