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245 条记录 (耗时 0.035 秒)

    Modifying the bandwidth of an established ATM call in response to an identification of the contents of the call
    51.
    发明申请
    Modifying the bandwidth of an established ATM call in response to an identification of the contents of the call 有权
    响应于呼叫内容的识别，修改建立的ATM呼叫的带宽

    公开(公告)号：US20060274756A1

    公开(公告)日：2006-12-07

    申请号：US11488118

    申请日：2006-07-17

    申请人： Snehal Karia ,  Rajesh Kumar

    发明人： Snehal Karia ,  Rajesh Kumar

    IPC分类号： H04L12/56

    CPC分类号： H04L47/24 ,  H04L47/15 ,  H04L47/70 ,  H04L47/762 ,  H04L47/803 ,  H04L47/822 ,  H04L2012/563 ,  H04L2012/5636

    摘要： Methods and apparatus are disclosed for changing the bandwidth or other traffic characteristic of an established packet call in response to an identification of the requirements of the call. For example, in response to the detection of a type of call, such as a fax or modem call, ATM signaling is performed with peer signaling agent(s) located in the ATM network to increase the bandwidth of an already established portion of a call through the ATM network. This signaling typically includes sending a call modify request message and receiving a modify acknowledgement message, with these messages typically, but not limited to, conforming with a Q.2963 signaling standard.

    摘要翻译： 公开了用于响应于呼叫要求的识别来改变已建立分组呼叫的带宽或其他业务特性的方法和装置。 例如，响应于诸如传真或调制解调器呼叫的呼叫类型的检测，ATM信令与位于ATM网络中的对等信令代理一起执行以增加呼叫已经建立的部分的带宽 通过ATM网络。 该信令通常包括发送呼叫修改请求消息并接收修改确认消息，其中这些消息通常但不限于符合Q.2963信令标准。

    Method and apparatus for carrying telephony network traffic over an ATM network
    52.
    发明授权
    Method and apparatus for carrying telephony network traffic over an ATM network 失效
    用于在ATM网络上承载电话网络业务的方法和装置

    公开(公告)号：US07085279B1

    公开(公告)日：2006-08-01

    申请号：US09752075

    申请日：2000-12-29

    申请人： Rajesh Kumar ,  Snehal Karia

    发明人： Rajesh Kumar ,  Snehal Karia

    IPC分类号： H04L12/56

    CPC分类号： H04L12/5601 ,  H04L2012/563 ,  H04L2012/5671 ,  H04M7/063

    摘要： A method that sends ATM source identification and an ATM-TDM correlation tag from an ATM source gateway to a telephony signaling control network; and then receives at an ATM destination gateway the ATM source identification and the ATM-TDM correlation tag as sent from the telephony signaling control network; and then sends the ATM-TDM correlation tag from the ATM destination gateway to the ATM source gateway to establish a connection between the ATM destination gateway and the ATM source gateway.

    摘要翻译： 一种将ATM源标识和ATM-TDM相关标签从ATM源网关发送到电话信令控制网络的方法; 然后在ATM目的地网关处接收从电话信令控制网络发送的ATM源标识和ATM-TDM相关标签; 然后将ATM-TDM相关标签从ATM目的网关发送到ATM源网关，建立ATM目的网关与ATM源网关之间的连接。

    Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
    55.
    发明授权
    Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same 有权
    具有结场效应晶体管的碳化硅半导体器件及其制造方法

    公开(公告)号：US07005678B2

    公开(公告)日：2006-02-28

    申请号：US10984953

    申请日：2004-11-10

    申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

    发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

    IPC分类号： H01L31/0312

    CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

    摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

    摘要翻译： 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。

    Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same
    59.
    发明申请
    Silicon carbide semiconductor device having junction field effect transistor and method for manufacturing the same 有权
    具有结场效应晶体管的碳化硅半导体器件及其制造方法

    公开(公告)号：US20050151158A1

    公开(公告)日：2005-07-14

    申请号：US10984953

    申请日：2004-11-10

    申请人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

    发明人： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

    IPC分类号： H01L29/06 ,  H01L21/04 ,  H01L21/337 ,  H01L21/8232 ,  H01L27/06 ,  H01L29/24 ,  H01L29/808 ,  H01L29/15 ,  H01L21/332

    CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

    摘要： A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

    摘要翻译： 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。