公开(公告)号：US20250081536A1

公开(公告)日：2025-03-06

申请号：US18948657

申请日：2024-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Nobuharu OHSAWA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L21/28 ,  H01L27/12 ,  H01L29/04 ,  H01L29/45 ,  H01L29/49

Abstract: The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.

公开(公告)号：US20240172488A1

公开(公告)日：2024-05-23

申请号：US18549218

申请日：2022-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi OKAZAKI ,  Yasutaka NAKAZAWA ,  Rai SATO

IPC: H10K59/122 ,  G09G3/32 ,  H10K59/12

CPC classification number: H10K59/122 ,  G09G3/32 ,  H10K59/1201 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2300/0842

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a first layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer; the second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer; the first light-emitting layer covers the side surface of the first pixel electrode; the second light-emitting layer covers the side surface of the second pixel electrode; the first layer is positioned over the first light-emitting layer; in a cross-sectional view, one end portion of the first layer is aligned or substantially aligned with an end portion of the first light-emitting layer and the other end portion of the first layer is positioned over the first light-emitting layer; the first insulating layer covers the top surface of the first layer, the side surface of the first light-emitting layer, and the side surface of the second light-emitting layer; and the common electrode is positioned over the first insulating layer.

公开(公告)号：US20240138183A1

公开(公告)日：2024-04-25

申请号：US18373324

申请日：2023-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka NAKAZAWA ,  Takayuki OHIDE ,  Naoto GOTO ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Hayato YAMAWAKI ,  Kenichi OKAZAKI ,  Sachiko KAWAKAMI

IPC: H10K59/12 ,  H10K59/122

CPC classification number: H10K59/1201 ,  H10K59/122 ,  H10K85/636

Abstract: A method for manufacturing a novel display apparatus is provided. The method includes a first step of forming a first electrode, a second electrode, and a first gap over an insulating film, a second step of forming a first film over the second electrode; a third step of forming a first layer overlapping with the first electrode, a fourth step of removing the first film by an etching method to form a first unit overlapping with the first electrode, a fifth step of removing a surface of the second electrode, a sixth step of forming a second film over the first layer and the second electrode, a seventh step of forming a second layer overlapping with the second electrode, and an eighth step of removing the second film by an etching method using the second layer to form a second unit overlapping with the second electrode and a second gap.

公开(公告)号：US20240074224A1

公开(公告)日：2024-02-29

申请号：US18280287

申请日：2022-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Yasutaka NAKAZAWA ,  Rai SATO

IPC: H10K50/13 ,  H10K50/19 ,  H10K59/35

CPC classification number: H10K50/13 ,  H10K50/19 ,  H10K59/353

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first conductive layer, a second conductive layer over the first conductive layer, a first light-emitting layer over the second conductive layer, and a common electrode over the first light-emitting layer. The second light-emitting device includes a third conductive layer, a fourth conductive layer over the third conductive layer, a second light-emitting layer over the fourth conductive layer, and the common electrode over the second light-emitting layer. The second conductive layer covers a side surface of the first conductive layer, the fourth conductive layer covers a side surface of the third conductive layer, an end portion of the first light-emitting layer is aligned or substantially aligned with an end portion of the second conductive layer, and an end portion of the second light-emitting layer is aligned or substantially aligned with an end portion of the fourth conductive layer.

公开(公告)号：US20240072065A1

公开(公告)日：2024-02-29

申请号：US18387146

申请日：2023-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Daisuke KUROSAKI ,  Yasutaka NAKAZAWA ,  Kazunori WATANABE ,  Koji KUSUNOKI

IPC: H01L27/12 ,  G02F1/1368 ,  G06F3/041 ,  G06F3/044 ,  H01L29/786

CPC classification number: H01L27/1229 ,  G02F1/1368 ,  G06F3/04166 ,  G06F3/0446 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device includes a liquid crystal element, a transistor, a scan line, and a signal line. The liquid crystal element includes a pixel electrode, a liquid crystal layer, and a common electrode. The scan line and the signal line are each electrically connected to the transistor. The scan line and the signal line each include a metal layer. The transistor is electrically connected to the pixel electrode. A semiconductor layer of the transistor includes a stack of a first metal oxide layer and a second metal oxide layer. The first metal oxide layer includes a region with lower crystallinity than the second metal oxide layer. The transistor includes a first region connected to the pixel electrode. The pixel electrode, the common electrode, and the first region are each configured to transmit visible light. Visible light passes through the first region and the liquid crystal element and exits from the display device.

公开(公告)号：US20240057378A1

公开(公告)日：2024-02-15

申请号：US18259287

申请日：2021-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daiki NAKAMURA ,  Tomoya AOYAMA ,  Yasutaka NAKAZAWA ,  Rai SATO ,  Seiji YASUMOTO ,  Kiyofumi OGINO ,  Takashi SHIRAISHI

IPC: H10K59/12 ,  H10K59/35 ,  H10K59/38

CPC classification number: H10K59/1201 ,  H10K59/35 ,  H10K59/38 ,  H10K71/233

Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.

公开(公告)号：US20240014218A1

公开(公告)日：2024-01-11

申请号：US18035150

申请日：2021-11-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Rai SATO ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi SHIRAISHI ,  Kiyofumi OGINO ,  Kenichi OKAZAKI

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/42384 ,  H01L29/78696 ,  H01L29/7869 ,  H01L27/1288 ,  H01L2029/42388 ,  G02F1/1368

Abstract: A semiconductor device including a transistor with high on-state current and a fabrication method thereof are provided. A semiconductor device having favorable electrical characteristics and a fabrication method thereof are provided. The semiconductor device includes a substrate, an island-shaped insulating layer over the substrate, and a transistor over the substrate and the insulating layer. The transistor includes a gate electrode, a gate insulating layer, a semiconductor layer, and a pair of conductive layers. One of the pair of the conductive layers includes a region overlapping with the insulating layer, and the other of the pair of the conductive layers includes a region not overlapping with the insulating layer. The level of a top surface of the other of the pair of the conductive layers is lower than the level of a top surface of the one of the pair of the conductive layers. Each of the pair of the conductive layers is in contact with the semiconductor layer. The semiconductor layer includes a region overlapping with the gate electrode through the gate insulating layer.

公开(公告)号：US20230354625A1

公开(公告)日：2023-11-02

申请号：US18306841

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Akio YAMASHITA ,  Kazuya SUGIMOTO ,  Taisuke KAMADA ,  Sachiko KAWAKAMI ,  Kazuki KAJIYAMA ,  Yasutaka NAKAZAWA ,  Kaori IKADA

IPC: H10K39/32 ,  H10K39/38 ,  H10K59/80

CPC classification number: H10K39/32 ,  H10K39/38 ,  H10K59/80517 ,  H10K59/80523

Abstract: A photoelectric conversion device in which an increase in driving voltage is inhibited is provided. The photoelectric conversion device includes a first electrode, a second electrode, and an organic compound layer; the organic compound layer is positioned between the first electrode and the second electrode; the organic compound layer includes a first layer; a structure body including projections is included between the first layer and the second electrode; and the structure body contains a first organic compound.

公开(公告)号：US20220123150A1

公开(公告)日：2022-04-21

申请号：US17567812

申请日：2022-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Katsuaki TOCHIBAYASHI ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.

公开(公告)号：US20210399140A1

公开(公告)日：2021-12-23

申请号：US17279153

申请日：2019-09-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Rai SATO ,  Masami JINTYOU ,  Masayoshi DOBASHI ,  Takashi SHIRAISHI ,  Satoru SAITO ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, and a conductive layer; the first insulating layer, the metal oxide layer, and the conductive layer are stacked in this order over the semiconductor layer; an end portion of the first insulating layer is located inward from an end portion of the semiconductor layer; an end portion of the metal oxide layer is located inward from the end portion of the first insulating layer; and an end portion of the conductive layer is located inward from the end portion of the metal oxide layer. The second insulating layer is preferably provided to cover the semiconductor layer, the first insulating layer, the metal oxide layer, and the conductive layer. It is preferable that the semiconductor layer include a first region, a pair of second regions, and a pair of third regions; the first region overlap with the first insulating layer and the metal oxide layer; the second regions between which the first region is sandwiched overlap with the first insulating layer and not overlap with the metal oxide layer; the third regions between which the first region and the pair of second regions are sandwiched not overlap with the first insulating layer; and the third regions be in contact with the second insulating layer.