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    SEMICONDUCTOR DEVICE
    53.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20140191230A1

    公开(公告)日：2014-07-10

    申请号：US14202737

    申请日：2014-03-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU

    IPC: H01L29/786

    CPC classification number: H01L29/78693 ,  H01L29/7869 ,  H01L29/78696

    Abstract: A semiconductor device includes a base insulating film including silicon, an oxide semiconductor film over the base insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode which is in contact with the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a region in which a concentration of silicon distributed from the interface with the base insulating film toward an inside of the oxide semiconductor film is lower than or equal to 1.0 at. %. A crystal portion is included at least in the region.

    Abstract translation: 半导体器件包括：基底绝缘膜，包括硅，在基底绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，与栅极绝缘膜接触并与至少氧化物重叠的栅极; 半导体膜，以及与氧化物半导体膜电连接的源电极和漏电极。 氧化物半导体膜包括从与基底绝缘膜的界面朝向氧化物半导体膜的内部分布的硅浓度低于或等于1.0at的区域。 ％。 晶体部分至少包括在该区域中。

    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    54.
    发明申请
    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
    氧化物半导体膜和半导体器件

    公开(公告)号：US20140183532A1

    公开(公告)日：2014-07-03

    申请号：US14199257

    申请日：2014-03-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

    IPC: H01L29/786

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

    Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

    SEMICONDUCTOR DEVICE
    56.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20130092945A1

    公开(公告)日：2013-04-18

    申请号：US13649580

    申请日：2012-10-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuya HONDA ,  Masashi TSUBUKU ,  Yusuke NONAKA ,  Takashi SHIMAZU ,  Shunpei YAMAZAKI

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

    Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    59.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220059701A1

    公开(公告)日：2022-02-24

    申请号：US17501061

    申请日：2021-10-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yoshinobu ASAMI ,  Takahisa ISHIYAMA ,  Motomu KURATA ,  Ryo TOKUMARU ,  Noritaka ISHIHARA ,  Yusuke NONAKA

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

    Abstract: A semiconductor device with favorable reliability is provided.
    The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

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