Abstract:
An unrecoverable error is determined when attempting to access data stored in a target memory unit of a storage medium of a data storage device. Access to neighboring memory units that are proximate to the target memory unit is controlled in response. The controlling of the access affects a temperature of the target memory unit over a period of time. After the period of time, access to the data is attempted from the target memory unit.
Abstract:
Mapping table entries that map logical block addresses to physical block addresses can be intercepted and compressed to save space. In some cases, the mapping table entries can be compressed into compression units, which can hold multiple mapping table entries. Portions of the mapping table entries can be arranged into groups, and a group can be compressed with a unique compression method. The compression method used to compress a group may be based on data characteristics of the group. When data corresponding to the mapping table entries are read or modified, the compressed data can be decompressed and provided to a requesting controller or processor. When the mapping table entry is modified, the updated mapping entry may be arranged into groups, and the groups can be compressed and stored to the compression units.
Abstract:
A definition is received of at least one data object and a compute object from a host at a storage compute device. A first key is associated with the at least one data object and a second key is associated with the compute object. A command is received from the host to perform a computation that links the first and second keys. The computation is defined by the compute object and acts on the data object. The computation is performed via the storage compute device using the compute object and the data object in response to the command.
Abstract:
First and second data representation are stored in first and second blocks of a non-volatile, solid-state memory. The first and second blocks share series-connected bit lines. The first and second blocks are selected and other blocks of the non-volatile, solid-state memory that share the bit lines are deselected. The bit lines are read to determine a combination of the first and second data representations. The combination may include a union or an intersection.
Abstract:
Computations are performed on data objects via two or more data storage sections. The data storage sections facilitate persistently storing the data objects in parallel read/write operations. The data objects are used in computations within a storage compute device. At least one of the storage sections is deactivated during the computations to reduce power usage of the storage compute device.
Abstract:
Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, the apparatus has a solid-state non-volatile memory and a processing circuit configured to write data to a selected location of the memory. The data are arranged in the form of multi-bit code words each comprising a user data payload and associated parity data configured to correct one or more bit errors in the user data payload. The processing circuit adjusts at least a selected one of a size of the code words, a size of the user data payloads or a size of the parity data responsive to at least a selected one of an accumulated count of access operations upon the selected location or an error rate associated with the selected location.
Abstract:
A data storage device may generally be constructed and operated with at least a controller configured to identify a variance from a predetermined threshold in at least one variable resistance memory cell and upgrade a first error correction code (ECC) level to a second ECC level for the at least one variable resistance memory cell.
Abstract:
Two or more workload indicators affecting a memory cell of a resistance-based, non-volatile memory are measured. The two or more workload indicators are applied to a transfer function that predicts a resistance shift and/or resistance noise variance in response to the two or more workload indicators. A result of the transfer function is applied to shift and/or determine a threshold resistance used for at least one of a program operation and a read operation affecting the memory cell. An error rate of the memory cell is reduced as a result.
Abstract:
Data is written to cells of a resistance-based, non-volatile memory. An activity metric is tracked since the writing of the data to the cells. In response to the activity metric satisfying a threshold, a bias signal is applied to the cells to reverse a resistance shift of the cells.
Abstract:
Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory module has a plurality of solid-state non-volatile memory cells. A controller communicates a first command having address information and a first operation code. The first operation code identifies a first action to be taken by the memory module in relation to the address information. The controller subsequently communicates a second command having a second operation code without corresponding address information. The memory module takes a second action identified by the second command using the address information from the first command.