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    Cash energy absorption member
    51.
    发明申请
    Cash energy absorption member 有权
    现金能量吸收成员

    公开(公告)号：US20060202493A1

    公开(公告)日：2006-09-14

    申请号：US11340663

    申请日：2006-01-27

    申请人： Kenji Tamura ,  Yoshiaki Nakazawa ,  Michitaka Yoshida ,  Katsutoshi Takagi ,  Mitsutoshi Kano

    发明人： Kenji Tamura ,  Yoshiaki Nakazawa ,  Michitaka Yoshida ,  Katsutoshi Takagi ,  Mitsutoshi Kano

    IPC分类号： B60R19/34

    CPC分类号： F16F7/123 ,  F16F7/12

    摘要： A crash energy absorption member formed from a tubular body for absorbing impact energy by buckling when it receives an impact load in the axial direction from one end in the axial direction. It has a transverse cross-sectional shape along at least a portion in the axial direction which is a closed cross section having a plurality of vertices in which there is no flange on the outside of the closed cross section, and in a region of at least one side of a basic cross section formed from the largest outline obtained by connecting a portion of the plurality of vertices by straight lines, a groove which is recessed towards the inside of the outline is provided in a location other than at an end point of the side. Thus, the crash energy absorption member can achieve a prescribed amount of shock absorption by stably buckling in the axial direction without bending and without an increase in weight due to the addition of a partition or due to an increase in plate thickness.

    摘要翻译： 一种碰撞能量吸收构件，其由管状体形成，用于当其从轴向的一端接收轴向的冲击载荷时通过弯曲来吸收冲击能量。 它具有沿着轴向的至少一部分的横截面形状，该横截面形状是具有多个顶点的封闭横截面，其中在闭合截面的外侧上没有凸缘，并且在至少一个区域中 由通过用直线连接多个顶点的一部分获得的最大轮廓形成的基本横截面的一侧设置在除了轮廓的端点之外的位置， 侧。 因此，碰撞能量吸收部件能够通过在轴向上稳定地屈曲而不弯曲而实现规定量的减震，而不会由于增加隔板而增加重量，或者由于板厚的增加。

    Ag base sputtering target and process for producing the same
    54.
    发明申请
    Ag base sputtering target and process for producing the same 有权
    Ag基溅射靶及其制造方法

    公开(公告)号：US20060169577A1

    公开(公告)日：2006-08-03

    申请号：US10564502

    申请日：2004-07-14

    申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

    发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

    IPC分类号： C23C14/00

    CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

    摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave−Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations

    摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 <？in-line-formula description =“In-line Formulas”end =“lead”？> A1 =（D ave x100（％）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”B1 =（D＆lt; ave＆lt; /＆gt; -D＆lt; min＆gt;）/ D大于x100（％）<？in-line-formula description = 所有选定位置的粒度D中的最大值D ：粒度范围内的最小值 D在所有选定位置D ：所有选定位置的粒度D的平均值

    METAL OXIDE-METAL COMPOSITE SPUTTERING TARGET
    56.
    发明申请
    METAL OXIDE-METAL COMPOSITE SPUTTERING TARGET 审中-公开
    金属氧化物金属复合溅射靶

    公开(公告)号：US20120181172A1

    公开(公告)日：2012-07-19

    申请号：US13496899

    申请日：2010-09-15

    申请人： Hitoshi Matsuzaki ,  Katsutoshi Takagi ,  Norihiro Jiko ,  Masaya Ehira

    发明人： Hitoshi Matsuzaki ,  Katsutoshi Takagi ,  Norihiro Jiko ,  Masaya Ehira

    IPC分类号： C23C14/34 ,  C23C14/08

    CPC分类号： G11B7/266 ,  C23C14/3414 ,  G11B2007/24302 ,  G11B2007/2432

    摘要： Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.

    摘要翻译： 公开了一种金属氧化物 - 金属复合溅射靶，其用于形成用于光学信息记录介质的记录层，所述记录层含有金属氧化物和金属。 具体公开了包含金属氧化物（A）和金属（B）的复合溅射靶，其中金属氧化物（A）的圆当量直径的最大值被控制在200μm以下。

    AG base sputtering target and process for producing the same
    57.
    发明授权
    AG base sputtering target and process for producing the same 有权
    AG基溅射靶及其制造方法

    公开(公告)号：US08123875B2

    公开(公告)日：2012-02-28

    申请号：US12793257

    申请日：2010-06-03

    申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

    发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Hitoshi Matsuzaki ,  Hideo Fujii

    IPC分类号： C23C14/34

    CPC分类号： C22C5/06 ,  C22F1/14 ,  C23C14/3414

    摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave

    摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。 通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

    Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target
    58.
    发明授权
    Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target 有权
    用于光学信息记录介质的半反射膜和反射膜，光学信息记录介质和溅射靶

    公开(公告)号：US07704581B2

    公开(公告)日：2010-04-27

    申请号：US11103615

    申请日：2005-04-12

    申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

    发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi

    IPC分类号： B32B3/02

    CPC分类号： G11B7/258 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/259 ,  Y10T428/21

    摘要： The present invention has been completed in view of such situation, and an object of the present invention is to find a Ag based alloy which exhibits high cohesion resistance, high light resistance, high heat resistance, high reflectivity, high transmissivity, low absorptivity, and high thermal conductivity of the level which had not been realized by the pure Ag or by the conventional Ag alloys, and on the bases of such alloy, to provide a semi-reflective film and a reflective film for an optical information recording medium provided with excellent writing/reading properties and long term reliability; sputtering target for an optical information recording medium used in depositing such semi-reflective film and the reflective film; and an optical information recording medium provided with such semi-reflective film or the reflective film.A semi-reflective film or reflective film for an optical information recording medium comprising a Ag based alloy, wherein the Ag based alloy comprises 0.005 to 0.40% (at % unless otherwise noted) of Bi and 0.05 to 5% in total of at least one element selected from Zn, Al, Ga, In, Si, Ge, and Sn.

    摘要翻译： 发明内容本发明是鉴于这种情况而完成的，其目的在于找到具有高内聚力，高耐光性，高耐热性，高反射率，高透射率，低吸收率的Ag系合金，以及 通过纯Ag或常规Ag合金未实现的水平的高导热性，并且在这种合金的基础上，提供半反射膜和用于光学信息记录介质的反射膜，其提供优异的光学信息记录介质 写/读性能和长期可靠性; 用于沉积这种半反射膜和反射膜的光学信息记录介质的溅射靶; 以及设置有这种半反射膜或反射膜的光学信息记录介质。 一种用于光学信息记录介质的半反射膜或反射膜，其包括Ag基合金，其中所述Ag基合金包含Bi的0.005至0.40％（除非另有说明）为0.005至0.40％，并且总共为至少一种为0.05至5％ 元素选自Zn，Al，Ga，In，Si，Ge和Sn。

    Al-Ni-La-Cu alloy sputtering target and manufacturing method thereof
    59.
    发明申请
    Al-Ni-La-Cu alloy sputtering target and manufacturing method thereof 有权
    Al-Ni-La-Cu合金溅射靶及其制造方法

    公开(公告)号：US20090242395A1

    公开(公告)日：2009-10-01

    申请号：US12415379

    申请日：2009-03-31

    申请人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

    发明人： Katsutoshi Takagi ,  Masaya Ehira ,  Yuki Iwasaki ,  Hiroshi Goto

    IPC分类号： C23C14/34 ,  B05D3/02

    CPC分类号： C23C14/3414

    摘要： The present invention provides a technique capable of decreasing a generation of splashing upon depositing by using an Al—Ni—La—Cu alloy sputtering target comprising Ni, La, and Cu. The invention relates to an Al—Ni—La—Cu alloy sputtering target comprising Ni, La and Cu, in which (1) a total area of an Al—Ni intermetallic compound mainly comprising Al and Ni and having an average grain size of 0.3 μm or more and 3 μm or less is 70% or more by area ratio based on an entire area of the Al—Ni intermetallic compound, and (2) a total area of an Al—La—Cu intermetallic compound mainly comprising Al, La and Cu and having an average grain size of 0.2 μm or more and 2 μm or less is 70% or more by area ratio based on an entire area of the Al—La—Cu intermetallic compound, in a case where a portion of the sputtering target is observed within a range of from 1/4 t (t: thickness) to 3/4 t along a cross section vertical to a plane of the sputtering target by using a scanning electron microscope at a magnification of 2000.

    摘要翻译： 本发明提供一种能够通过使用包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，沉积时减少溅射产生的技术。 本发明涉及包含Ni，La和Cu的Al-Ni-La-Cu合金溅射靶，其中（1）主要包含Al和Ni并且平均粒径为0.3的Al-Ni金属间化合物的总面积 基于Al-Ni金属间化合物的整个面积，3μm以下的3μm以下的面积比为70％以上，（2）主要包含Al，La的Al-La-Cu金属间化合物的总面积 并且平均粒径为0.2μm以上且2μm以下的Cu相对于Al-La-Cu金属间化合物的整个面积的面积比为70％以上，在溅射的一部分的情况下 沿着垂直于溅射靶的平面的横截面，在使用2000倍的扫描电子显微镜的范围内，在1/4t（t：厚度）至3/4t的范围内观察到靶。

    AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
    60.
    发明申请
    AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF 审中-公开
    基于AL的合金喷射目标及其制造方法

    公开(公告)号：US20090242394A1

    公开(公告)日：2009-10-01

    申请号：US12414877

    申请日：2009-03-31

    申请人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

    发明人： Katsutoshi Takagi ,  Yuki Iwasaki ,  Masaya Ehira ,  Hiroshi Goto ,  Aya Miki ,  Hiroyuki Okuno ,  Mototaka Ochi ,  Tomoya Kishi

    IPC分类号： C23C14/34 ,  C21D1/00

    CPC分类号： C23C14/3414 ,  C22C21/00 ,  C22F1/04

    摘要： The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more.

    摘要翻译： 本发明提供能够在使用溅射靶的初始阶段减少飞溅产生的Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，从而防止由此引起的缺陷 在互连膜等中，提高FPD的成品率和操作性能，以及其制造方法。 本发明涉及一种Al基合金溅射靶，它是Al-（Ni，Co） - （Cu，Ge） - （La，Gd，Nd）合金溅射靶，其包含至少一种选自A ，Co），选自B族（Cu，Ge）中的至少一种以及选自维氏硬度（HV）为35以上的C（La，Gd，Nd）中的至少一种。