METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20220223721A1

    公开(公告)日:2022-07-14

    申请号:US17609629

    申请日:2020-05-18

    Abstract: A method for manufacturing a semiconductor device with high productivity is provided. The method includes a step of forming a first insulator, a second insulator, and a third insulator in this order using a multi-chamber apparatus; a step of forming a fourth insulator, a fifth insulator, a first oxide film, a second oxide film, and a third oxide film in this order using a multi-chamber apparatus; a step of forming a conductive film; a step of processing the first oxide film, the second oxide film, the third oxide film, and the conductive film, thereby forming a first oxide, a second oxide, an oxide layer, and a conductive layer each having an island shape; a step of forming a sixth insulator and an insulating film in this order using a multi-chamber apparatus; a step of planarizing the insulating film; a step of forming, in the insulating film and the sixth insulator, an opening where the second oxide is exposed; a step of forming a seventh insulator and a first conductor; and a step of forming an eighth insulator and a ninth insulator in this order using a multi-chamber apparatus.

    FUNCTIONAL PANEL, DEVICE, AND DATA PROCESSOR
    57.
    发明申请
    FUNCTIONAL PANEL, DEVICE, AND DATA PROCESSOR 审中-公开
    功能面板,设备和数据处理器

    公开(公告)号:US20160103539A1

    公开(公告)日:2016-04-14

    申请号:US14877436

    申请日:2015-10-07

    Abstract: A novel functional panel, a novel device, or a novel data processor is provided. A structure in which a first plane, a second plane that is opposite the first plane, and a neutral plane between the first plane and the second plane are provided and a portion of a functional layer having a thickness greater than or equal to half of the thickness of the functional layer is in a region between the first plane and the neutral plane was conceived.

    Abstract translation: 提供了一种新颖的功能面板,新颖的设备或新颖的数据处理器。 设置有第一平面,与第一平面相对的第二平面和第一平面与第二平面之间的中性平面的结构,并且功能层的一部分具有大于或等于 功能层的厚度在第一平面和中性平面之间的区域中。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    58.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20150293404A1

    公开(公告)日:2015-10-15

    申请号:US14749962

    申请日:2015-06-25

    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

    Abstract translation: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术,其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外,本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术,而不会使器件和制造过程复杂化。 根据本发明,在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层,在包含光催化剂物质的有机化合物层上形成元素层,所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射,并且元件层从第一衬底剥离。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    59.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20140339578A1

    公开(公告)日:2014-11-20

    申请号:US14450967

    申请日:2014-08-04

    Abstract: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

    Abstract translation: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术,其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外,本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术,而不会使器件和制造过程复杂化。 根据本发明,在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层,在包含光催化剂物质的有机化合物层上形成元素层,所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射,并且元件层从第一衬底剥离。

    METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE
    60.
    发明申请
    METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 有权
    制造SOI衬底和半导体器件的方法

    公开(公告)号:US20130149840A1

    公开(公告)日:2013-06-13

    申请号:US13759264

    申请日:2013-02-05

    CPC classification number: H01L21/84 H01L21/26506 H01L21/76254

    Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

    Abstract translation: 本发明的目的是提供一种制造具有SOI层的SOI衬底的方法,该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时,也可以在实际应用中以高产率使用。 此外,本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。 当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时,一个或两个键合表面被激活,然后柔性衬底具有绝缘表面 并且单晶半导体衬底彼此附接。

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