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    SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
    4.
    发明申请
    SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE 审中-公开
    SOI衬底，其制造方法和半导体器件

    公开(公告)号：US20140329371A1

    公开(公告)日：2014-11-06

    申请号：US14336245

    申请日：2014-07-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideto OHNUMA ,  Tetsuya KAKEHATA ,  Yoichi IIKUBO

    IPC: H01L21/762

    CPC classification number: H01L21/76254 ,  H01L21/84

    Abstract: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

    Abstract translation: 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

    METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
    制造SOI衬底和半导体器件的方法

    公开(公告)号：US20140087543A1

    公开(公告)日：2014-03-27

    申请号：US14097793

    申请日：2013-12-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasuhiro JINBO ,  Hironobu SHOJI ,  Hideto OHNUMA ,  Shunpei YAMAZAKI

    IPC: H01L21/84

    CPC classification number: H01L21/84 ,  H01L21/26506 ,  H01L21/76254

    Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

    Abstract translation: 本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时，也可以在实际应用中以高产率使用。 此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。 当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面 并且单晶半导体衬底彼此附接。

    Semiconductor Device and Manufacturing Method Thereof
    6.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 审中-公开

    公开(公告)号：US20190165334A1

    公开(公告)日：2019-05-30

    申请号：US16264996

    申请日：2019-02-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hideaki KUWABARA ,  Hideto OHNUMA

    IPC: H01L51/56 ,  H01L27/32 ,  H01L33/36 ,  H01L51/52

    Abstract: As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20140256096A1

    公开(公告)日：2014-09-11

    申请号：US14284857

    申请日：2014-05-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Junichi KOEZUKA ,  Satoshi SHINOHARA ,  Miki SUZUKI ,  Hideto OHNUMA

    IPC: H01L29/66

    CPC classification number: H01L29/66772 ,  H01L27/1288 ,  H01L29/66492 ,  H01L29/78624

    Abstract: A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

    Abstract translation: 提供了一种半导体器件，其包括形成在绝缘表面上并具有源极区，漏极区和沟道形成区的单晶半导体层，覆盖单晶半导体层的栅极绝缘膜和与 沟道形成区域之间插入栅极绝缘膜。 在半导体器件中，源极和漏极区域的至少漏极区域包括与沟道形成区域相邻的第一杂质区域和与第一杂质区域相邻的第二杂质区域。 与深度方向上的第二杂质区域的杂质浓度分布的最大值相比，深度方向上的第一杂质区域的杂质浓度分布的最大值比绝缘面更接近。

    SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    SOI衬底及其制造方法

    公开(公告)号：US20140103409A1

    公开(公告)日：2014-04-17

    申请号：US14134047

    申请日：2013-12-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

    IPC: H01L29/06 ,  H01L29/78 ,  H01L31/0352

    CPC classification number: H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

    Abstract: An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

    Abstract translation: 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

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