摘要:
Disclosed is an LCD with improved image retention for increased reliability and screen quality. The LCD includes lower and upper substrates provided with predetermined patterns, respectively, and positioned to face each other with a predetermined distance; a liquid crystal layer interposed between the lower and upper substrates; and alignment layers positioned between the lower substrate and the liquid crystal layer and the upper substrate and the liquid crystal layer, respectively, to determine the initial arrangement of liquid crystals. The alignment layers have bubbles formed therein to reduce the capacitance generated by the alignment layers and the difference in level of the lower substrate for improved image retention.
摘要:
An apparatus for measuring Optical Beat Interference (OBI) noise is applied to a central office in a Subcarrier Multiple Access (SCMA) optical network. The central office includes an optical receiver for converting an optical signal received through an optical fiber into an electrical signal. The OBI noise measurement apparatus includes a power divider, first and second filters, and a power measurement unit. The power divider divides the power of a signal output from the optical receiver into two signals. The first filter passes one of the two signals divided by the power divider in a low band of frequencies below a band of subcarrier signals. The second filter passes the other of the two signals divided by the power divider in a high band of frequencies above the band of subcarrier signals. The power measurement unit measures the power of each signal passed through the first and second filters.
摘要:
A semiconductor device may include a fin structure having source/drain regions and channel fins connected between source/drain patterns. A gate insulation layer may be provided on the channel fins. A gate electrode may include lower gate patterns and an upper gate pattern. The lower gate patterns may extend in a vertical direction and contact the gate insulation layer. The upper gate pattern may extend in a second horizontal direction substantially perpendicular to the first horizontal direction. The upper gate pattern may be connected to upper portions of the lower gate patterns.
摘要:
According to some embodiments of the invention, a fin type transistor includes an active structure integrally formed with a silicon substrate. The active structure includes grooves that form blocking regions under source/drain regions. A gate structure is formed to cross the upper face of the active structure and to cover the exposed side surfaces of the lateral portions of the active structure. An effective channel length of a fin type transistor may be sufficiently ensured so that a short channel effect of the transistor may be prevented and the fin type transistor may have a high breakdown voltage.
摘要:
Provided is a coherent tuning apparatus capable of continuously tuning wavelength of light over a wide band of wavelength at high speed and outputting high power, the apparatus including an optical waveguide through which spatially coherent light passes, an electrode array for changing a direction of the light passing through the optical waveguide by applying electric field or current to a portion of the optical waveguide, and a wavelength selection optical element unit for selecting a specific wavelength of the light.
摘要:
Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
摘要:
A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.
摘要:
A method of forming fine patterns for a semiconductor device includes providing a substrate with a first region and a second region, forming a conductive layer on the substrate, the conductive layer including a plate portion covering the first region and first protruding portions extending from the plate portion in a first direction and covering a portion of the second region, forming first mask patterns on the conductive layer, the first mask patterns extending in the first direction and being spaced apart from each other in a second direction crossing the first direction, forming a second mask pattern on the second region to cover the first protruding portions, and patterning the conductive layer using the first and second mask patterns as an etch mask to form conductive patterns. In plan view, each of the first protruding portions is overlapped with a corresponding one of the first mask patterns.
摘要:
A memory apparatus and an operation of the memory apparatus which allow quick booting are provided. The memory apparatus includes a volatile memory, a non-volatile memory, and a memory control unit to control input/output of data stored in the volatile memory and the non-volatile memory. The memory control unit restores data, according to a control command input from outside of the memory apparatus, from the non-volatile memory to the volatile memory in an on-demand fashion during booting.
摘要:
A method of operating a file system in a host configured to store write data in a data storage device including a first region and a second region is disclosed, and includes; receiving a write data request for write data associated with a file, classifying the write data as hot data or cold data using file meta data for the file, and if the write data is classified as hot data, storing the write data in the first region, and otherwise if the write data is classified as cold data storing the write data in the second region.