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公开(公告)号：US10396276B2
公开(公告)日：2019-08-27
申请号：US15708747
申请日：2017-09-19
Applicant: TDK CORPORATION
Inventor： Tomoyuki Sasaki , Yohei Shiokawa
Abstract: The present invention has the purpose of providing an electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element that utilizes magnetization reversal based on pure spin current. The electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element of the present invention includes a first ferromagnetic metal layer with a varying magnetization direction; spin-orbit torque wiring that adjoins the first ferromagnetic metal layer and that extends in a second direction in a plane orthogonal to a first direction normal to the first ferromagnetic metal layer; and electric-current-generated magnetic field assist wiring that is arranged so as to be electrically insulated from the first ferromagnetic metal layer by an insulating layer and in which flows an electric current I0 for forming a magnetic field H0 that assists magnetization reversal of the first ferromagnetic metal layer.
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公开(公告)号：US10374151B2
公开(公告)日：2019-08-06
申请号：US16055589
申请日：2018-08-06
Applicant: TDK CORPORATION
Inventor： Eiji Komura , Yohei Shiokawa
Abstract: Provided is a spin current magnetoresistance effect element, including: a magnetoresistance effect element including a first ferromagnetic metal layer, a second ferromagnetic metal layer configured for magnetization direction to be changed, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and a spin-orbit torque wiring extending in a first direction which intersects a lamination direction of the magnetoresistance effect element and joined to the second ferromagnetic metal layer, wherein, a third end portion of the non-magnetic layer is located between a first end portion of the first ferromagnetic metal layer and a second end portion of the second ferromagnetic metal layer as viewed from the lamination direction on one of side surfaces of the magnetoresistance effect element.
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53.发明授权公开(公告)号：US10340901B2
公开(公告)日：2019-07-02
申请号：US15891759
申请日：2018-02-08
Applicant: TDK CORPORATION
Inventor： Jiro Yoshinari , Tomoyuki Sasaki , Yohei Shiokawa
IPC: G11C11/00 , G11C11/06 , H03K3/84 , H01F10/32 , H01L43/08 , G06F7/58 , H01L43/04 , H04L9/08 , H01L27/22 , G06N3/063 , G06N10/00
Abstract: A random number generator capable of generating a natural random number using a spin-orbit torque (SOT) is provided. The random number generator includes a ferromagnetic metal layer and a spin-orbit torque wiring extending in a first direction crossing a lamination direction of the ferromagnetic metal layer and being joined to the ferromagnetic metal layer, wherein the direction of spins injected from the spin-orbit torque wiring into the ferromagnetic metal layer and an easy magnetization direction of the ferromagnetic metal layer intersect each other.
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54.发明授权公开(公告)号：US10276785B2
公开(公告)日：2019-04-30
申请号：US15827852
申请日：2017-11-30
Applicant: TDK CORPORATION
Inventor： Yohei Shiokawa , Tomoyuki Sasaki , Tatsuo Shibata
Abstract: A spin current magnetization rotational element includes: a magnetization free layer including a synthetic structure consisting of a first ferromagnetic metal layer, a second ferromagnetic metal layer and a first non-magnetic layer sandwiched by the first ferromagnetic metal layer and the second ferromagnetic metal layer; and an antiferromagnetic spin-orbit torque wiring that extends in a second direction intersecting with a first direction that is a lamination direction of the synthetic structure and is joined to the first ferromagnetic metal layer, wherein the spin current magnetization rotational element is configured to change a magnetization direction of the magnetization free layer by applying current to the antiferromagnetic spin-orbit torque wiring.
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公开(公告)号：US10193061B2
公开(公告)日：2019-01-29
申请号：US15793523
申请日：2017-10-25
Applicant: TDK CORPORATION
Inventor： Yohei Shiokawa , Tomoyuki Sasaki , Tohru Oikawa
Abstract: A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.
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Patent Agency Ranking
公开(公告)号：US12290002B2
公开(公告)日：2025-04-29
申请号：US18232941
申请日：2023-08-11
Applicant: TDK CORPORATION
Inventor： Yugo Ishitani , Tomoyuki Sasaki , Yohei Shiokawa
Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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公开(公告)号：US12201035B2
公开(公告)日：2025-01-14
申请号：US18237014
申请日：2023-08-23
Applicant: TDK CORPORATION
Inventor： Zhenyao Tang , Yohei Shiokawa , Tomoyuki Sasaki
Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.
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公开(公告)号：US11744163B2
公开(公告)日：2023-08-29
申请号：US16935631
申请日：2020-07-22
Applicant: TDK CORPORATION
Inventor： Yohei Shiokawa
Abstract: A spin-orbit-torque type magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, and wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide.
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公开(公告)号：US11637236B2
公开(公告)日：2023-04-25
申请号：US17269173
申请日：2019-02-01
Applicant: TDK CORPORATION
Inventor： Tomoyuki Sasaki , Atsushi Tsumita , Yohei Shiokawa
Abstract: A spin-orbit torque magnetoresistance effect element according to the present embodiment includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part positioned between the first conductive part and the second conductive part when viewed from the first direction, facing a second surface of the spin-orbit torque wiring on a side opposite to a first surface which faces the element part, and including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a semiconductor to which a scattering element is added.
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公开(公告)号：US11600768B2
公开(公告)日：2023-03-07
申请号：US17165309
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Tomoyuki Sasaki , Yohei Shiokawa , Atsushi Tsumita
Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.
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