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63 条记录 (耗时 0.06 秒)

    Method of forming resist pattern
    51.
    发明授权
    Method of forming resist pattern 有权
    形成抗蚀剂图案的方法

    公开(公告)号：US08263322B2

    公开(公告)日：2012-09-11

    申请号：US12569040

    申请日：2009-09-29

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0035 ,  G03F7/0048 ,  G03F7/40

    摘要： A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：将正性化学放大抗蚀剂组合物施加到载体上以形成第一抗蚀剂膜，暴露第一抗蚀剂膜的一部分上的区域，进行曝光后烘烤处理，然后进行显影 形成第一抗蚀剂图案，并将负的化学放大抗蚀剂组合物施加到其上形成有第一抗蚀剂图案的支撑体上，从而形成第二抗蚀剂膜，暴露第二抗蚀剂膜的区域，该区域包括第一抗蚀剂图案 已经形成，在烘烤温度下进行后曝光烘烤处理，其使第一抗蚀剂膜在碱性显影溶液中的溶解度增加，并且降低第二抗蚀剂膜在碱性显影溶液中的溶解度，然后进行显影以形成 抗蚀图案

    METAL COMPOUND, POLYMERIZABLE COMPOSITION CONTAINING THE SAME, RESIN, METHOD FOR PRODUCING THE RESIN, AND USE OF THE RESIN
    54.
    发明申请
    METAL COMPOUND, POLYMERIZABLE COMPOSITION CONTAINING THE SAME, RESIN, METHOD FOR PRODUCING THE RESIN, AND USE OF THE RESIN 有权
    金属化合物，含有它们的可聚合组合物，树脂，用于生产树脂的方法和使用树脂

    公开(公告)号：US20110136977A1

    公开(公告)日：2011-06-09

    申请号：US12993057

    申请日：2009-05-15

    申请人： Masakazu Murakami ,  Mamoru Takashina ,  Tomoyuki Ando ,  Seiichi Kobayashi

    发明人： Masakazu Murakami ,  Mamoru Takashina ,  Tomoyuki Ando ,  Seiichi Kobayashi

    IPC分类号： C08L85/00 ,  C08G77/58 ,  C07D331/04

    CPC分类号： C07D331/04 ,  C07C321/04 ,  C08G75/06 ,  C08L81/02 ,  G02B1/041 ,  C08L81/00

    摘要： Disclosed is a metal compound represented by the following formula (0): in the formula (0), A represents a thietane ring, or a monovalent group containing a thiol group; B represents a divalent group containing a heteroatom; R2 represents a divalent organic group; n represents the valence of M; p represents an integer of 1 ton; M represents a lanthanoid atom or a barium (Ba) atom when A is a thietane ring, and represents a lanthanoid atom when A is a monovalent group containing a thiol group; or more than Y represents a monovalent inorganic or organic group; when n−p is not less than 2, a plurality of Y's each independently represent a monovalent inorganic or organic group; and when n−p is not less than 2, the plurality of Y's may be bonded with each other to form a ring containing M.

    摘要翻译： 公开了由下式（0）表示的金属化合物：在式（0）中，A表示硫杂环丁烷或含有硫醇基的一价基团; B表示含有杂原子的二价基团; R2表示二价有机基团; n表示M的化合价; p表示1吨的整数; 当A为硫杂环丁烷时，M表示镧系元素原子或钡（Ba）原子，当A为含有硫醇基的一价基团时，表示镧系元素原子。 或大于Y表示一价无机或有机基团; 当n-p不小于2时，多个Y各自独立地表示一价无机或有机基团; 当n-p不小于2时，多个Y可以彼此键合形成含有M的环。

    ADDITIVE FOR POLYMERIZABLE COMPOSITION, POLYMERIZABLE COMPOSITION CONTAINING THE SAME AND USE OF THE POLYMERIZABLE COMPOSITION
    55.
    发明申请
    ADDITIVE FOR POLYMERIZABLE COMPOSITION, POLYMERIZABLE COMPOSITION CONTAINING THE SAME AND USE OF THE POLYMERIZABLE COMPOSITION 有权
    可聚合组合物的添加剂，含有该组合物的可聚合组合物和可聚合组合物的使用

    公开(公告)号：US20100286334A1

    公开(公告)日：2010-11-11

    申请号：US12811713

    申请日：2008-12-11

    申请人： Tomoyuki Ando ,  Seiichi Kobayashi

    发明人： Tomoyuki Ando ,  Seiichi Kobayashi

    IPC分类号： C08K5/37 ,  C07F9/90 ,  C07F7/22

    CPC分类号： C07F7/003 ,  C07C321/14 ,  C07F7/30 ,  C08K5/372 ,  C08L63/00 ,  G02B1/041 ,  C08L75/04 ,  C08L81/00

    摘要： The additive for a polymerizable composition according to the present invention contains a compound represented by the general formula (a). In the general formula (a), R represents a saturated hydrocarbon group having 1 to 3 carbon atoms. M represents Sn, Sb, Bi, or Ge. m represents 0 or 1. R and M are not directly bonded when m is 0. n represents an integer of 1 to 3. X represents a monovalent linking group, and a plurality of X may be the same as or different from each other. When two or more linking groups X are bonded with the metal atom M, the linking groups X may combine together to form a ring.

    摘要翻译： 根据本发明的可聚合组合物的添加剂含有通式（a）表示的化合物。 在通式（a）中，R表示碳原子数1〜3的饱和烃基。 M表示Sn，Sb，Bi或Ge。 m表示0或1.当m为0时，R和M不直接键合.n表示1〜3的整数.X表示一价连接基，多个X可以相同也可以不同。 当两个或多个连接基团X与金属原子M键合时，连接基团X可以结合在一起形成环。

    CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME
    58.
    发明申请
    CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME 审中-公开
    可控制构件及其制造方法

    公开(公告)号：US20090211517A1

    公开(公告)日：2009-08-27

    申请号：US12392898

    申请日：2009-02-25

    申请人： Hideki KATO ,  Haruhide Shikano ,  Tomoyuki Ando ,  Masahiro Yasuda

    发明人： Hideki KATO ,  Haruhide Shikano ,  Tomoyuki Ando ,  Masahiro Yasuda

    IPC分类号： C30B35/00 ,  C04B35/52

    CPC分类号： C30B15/10 ,  C04B35/6269 ,  C04B35/83 ,  C04B37/008 ,  C04B2235/5256 ,  C04B2235/616 ,  C04B2237/361 ,  C04B2237/704 ,  C04B2237/76 ,  C04B2237/78 ,  C30B35/002 ,  D04C1/02 ,  Y10T117/10

    摘要： A crucible holding member includes a mesh body which includes a plurality of strands woven each including a plurality of carbon fibers. The mesh body has a triaxial weave structure including a plurality of first strands, a plurality of second strands and a plurality of third strands. The plurality of first strands are provided in a first direction inclined at a first angle with respect to a central axis of the mesh body. The plurality of second strands are provided so that the plurality of first strands and the plurality of second strands are substantially symmetrical with respect to the central axis. The plurality of third strands are provided substantially along the central axis. A matrix is filled in interstices between the carbon fibers.

    摘要翻译： 坩埚保持构件包括网状体，其包括多个编织的每个包括多个碳纤维的股线。 网状体具有包括多个第一股线，多个第二股线和多个第三股线的三轴编织结构。 多个第一股线相对于网状体的中心轴线以相对于第一角度倾斜的第一方向设置。 多个第二股线被设置成使得多个第一股线和多个第二股线相对于中心轴线基本对称。 多个第三股基本沿着中心轴设置。 在碳纤维之间的空隙中填充有基质。

    Positive resist composition and resist laminate for low-acceleration electron beam and mehod of pattern formation
    59.
    发明申请
    Positive resist composition and resist laminate for low-acceleration electron beam and mehod of pattern formation 审中-公开
    用于低加速度电子束的正抗蚀剂组合物和抗蚀剂层压板以及图案形成方法

    公开(公告)号：US20060240355A1

    公开(公告)日：2006-10-26

    申请号：US10572709

    申请日：2004-06-18

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  G03F7/094 ,  G03F7/11 ,  G03F7/2037

    摘要： A positive resist composition and resist laminate for a low-acceleration electron beam, which exhibit excellent resolution and dry etching resistance, reduced thickness loss, and can be used favorably in a method of forming a resist pattern that includes a step of conducting exposure using a low-acceleration electron beam. This positive resist composition for a low-acceleration electron beam includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the residual film ratio following alkali developing in the unexposed portions of the resist film formed from the positive resist composition for a low-acceleration electron beam is 80% or higher. The resist laminate includes a lower organic film layer that can be dry etched, an interlayer, and an upper resist film layer laminated sequentially on top of a substrate, wherein the upper resist film layer is formed from the above positive resist composition for a low-acceleration electron beam.

    摘要翻译： 表现出优异的分辨率和耐干蚀刻性的低加速度电子束的正型抗蚀剂组合物和抗蚀剂层压体减小了厚度损失，并且可以有利地用于形成抗蚀剂图案的方法，该抗蚀剂图案包括使用 低加速度电子束。 用于低加速度电子束的正型抗蚀剂组合物包括含有酸解离的溶解抑制基团并且在酸的作用下表现出增加的碱溶解性的树脂组分（A）和在酸的作用下产生酸的酸产生剂组分（B） 曝光，其中在由低加速度电子束的正型抗蚀剂组合物形成的抗蚀剂膜的未曝光部分中的碱显影之后的残留膜比率为80％以上。 抗蚀剂层叠体包括可以被干蚀刻的下部有机膜层，中间层和顺序层压在基板上的上部抗蚀剂膜层，其中，上述抗蚀剂膜层由上述正性抗蚀剂组合物形成， 加速电子束。