利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

203 条记录 (耗时 0.039 秒)

    Semiconductor device and method of manufacturing the same
    52.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08278177B2

    公开(公告)日：2012-10-02

    申请号：US13240303

    申请日：2011-09-22

    申请人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

    发明人： Yosuke Shimamune ,  Masahiro Fukuda ,  Young Suk Kim ,  Akira Katakami ,  Akiyoshi Hatada ,  Naoyoshi Tamura ,  Hiroyuki Ohta

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833

    摘要： A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

    摘要翻译： 在沟槽中通过外延生长法形成第一p型SiGe混晶层，形成第二p型SiGe混晶层。 在第二SiGe混晶层上形成第三p型SiGe混晶层。 从沟槽底部开始的第一SiGe混合晶体层的最上表面的高度低于沟槽的深度，硅衬底的表面是标准的。 从沟槽底部开始的第二SiGe混合晶体层的最上表面的高度高于沟槽的深度，硅衬底的表面是标准的。 第一和第三SiGe混晶层中的Ge浓度低于第二SiGe混晶层中的Ge浓度。

    Semiconductor device
    53.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08183681B2

    公开(公告)日：2012-05-22

    申请号：US12493502

    申请日：2009-06-29

    申请人： Shinji Hiramitsu ,  Hiroyuki Ohta ,  Koji Sasaki ,  Masato Nakamura ,  Osamu Ikeda ,  Satoshi Matsuyoshi

    发明人： Shinji Hiramitsu ,  Hiroyuki Ohta ,  Koji Sasaki ,  Masato Nakamura ,  Osamu Ikeda ,  Satoshi Matsuyoshi

    IPC分类号： H01L23/48

    CPC分类号： H01L23/051 ,  H01L23/24 ,  H01L2224/33181

    摘要： A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.

    摘要翻译： 一种半导体器件，包括半导体芯片; 通过第一接合部件接合到所述芯片的下表面的导电基极; 通过第二接合部件将芯片的上表面接合的导电性引线电极; 以及由于芯片和基极之间的热膨胀差异，用于减小在第一接合部件中产生的应力的第一应力消除部件。 基极和第一应力消除构件都与第一接合构件的下表面直接接触。 从与第一接合构件直接接触的基极形成突起，并且第一应力消除构件围绕突起的周向部分。

    Mechanical-Quantity Measuring Device
    54.
    发明申请
    Mechanical-Quantity Measuring Device 有权
    机械量测量装置

    公开(公告)号：US20110259112A1

    公开(公告)日：2011-10-27

    申请号：US13177185

    申请日：2011-07-06

    申请人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

    发明人： Hiromi Shimazu ,  Hiroyuki Ohta ,  Yohei Tanno

    IPC分类号： G01B7/16

    CPC分类号： G01L1/2293 ,  G01B7/18 ,  G01L1/18

    摘要： A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided.At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a direction.

    摘要翻译： 提供能够高精度地测量特定方向的应变分量的机械量测量装置。 在半导体单晶基板和半导体芯片的内部形成有至少两对以上的桥式电路，并且这些桥式电路之一形成n型扩散电阻器，其中电流方向和电阻值的测量变化为 与半导体单晶硅基板的<100>方向并联，另一桥接电路由与<110>方向并联的p型扩散电阻器的组合构成。

    Semiconductor device and method of fabricating the same
    55.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07663187B2

    公开(公告)日：2010-02-16

    申请号：US11984738

    申请日：2007-11-21

    申请人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

    发明人： Takashi Saiki ,  Hiroyuki Ohta ,  Hiroyuki Kanata

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/6659 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7833

    摘要： An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.

    摘要翻译： 通过栅极电极掩蔽下的离子注入形成延伸区域，然后在栅极电极和第一侧壁间隔物的掩蔽下注入在源极和漏极中包含的杂质上具有扩散抑制功能的物质，以便 在其表面层内形成半导体衬底并与第一侧壁间隔物对齐，从而形成非晶扩散抑制区域。

    Semiconductor device and manufacturing method thereof
    56.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07601996B2

    公开(公告)日：2009-10-13

    申请号：US11438684

    申请日：2006-05-23

    申请人： Hiroyuki Ohta ,  Kenichi Okabe

    发明人： Hiroyuki Ohta ,  Kenichi Okabe

    IPC分类号： H01L29/76

    CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.

    摘要翻译： 半导体器件包括布置在半导体衬底中的场效应晶体管，该晶体管具有栅电极，源/漏杂质扩散区和围绕源极/漏极杂质扩散区的碳层。 每个碳层设置在源极/漏极杂质扩散区域的相关联处，并且被定位成从远离栅电极的方向偏离源极/漏极延伸部的前边缘，并且作为轮廓围绕相关源 /漏杂质扩散区域。

    Semiconductor device and method for fabricating the same
    60.
    发明申请
    Semiconductor device and method for fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20070252221A1

    公开(公告)日：2007-11-01

    申请号：US11785464

    申请日：2007-04-18

    申请人： Hiroyuki Ohta

    发明人： Hiroyuki Ohta

    IPC分类号： H01L29/94

    CPC分类号： H01L21/823878 ,  H01L21/823418 ,  H01L21/823468 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823864

    摘要： The semiconductor device comprises gate electrodes 50 formed on a silicon substrate 32 with a gate insulation film 48 formed therebetween, source/drain diffused layers 66n, 66p formed in the silicon substrate 32 on both sides of the gate electrodes 50, a skirt-like insulation film 58 formed on a lower part of the side wall of the gate electrode 50 and on the side end of the gate insulation film 48, and a sidewall insulation film 60 formed on the exposed part of the side wall of the gate electrode 50, which is not covered with the skirt-like insulation film 58 and the side surface of the skirt-like insulation film 58.

    摘要翻译： 半导体器件包括形成在硅衬底32上的栅电极50，栅极绝缘膜48形成在它们之间，源极/漏极扩散层66 n，66 p形成在栅电极50两侧的硅衬底32中， 形成在栅极电极50的侧壁的下部和栅极绝缘膜48的侧端的绝缘膜58以及形成在栅电极50的侧壁的暴露部分上的侧壁绝缘膜60 ，其不被裙状绝缘膜58和裙状绝缘膜58的侧表面覆盖。