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    METHOD OF FORMING RESIST PATTERN
    51.
    发明申请
    METHOD OF FORMING RESIST PATTERN 有权
    形成电阻图案的方法

    公开(公告)号：US20120208131A1

    公开(公告)日：2012-08-16

    申请号：US13372740

    申请日：2012-02-14

    申请人： Tomoyuki Hirano ,  Daiju Shiono

    发明人： Tomoyuki Hirano ,  Daiju Shiono

    IPC分类号： G03F7/20

    CPC分类号： G03F7/325 ,  G03F7/0397 ,  G03F7/2041

    摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits increased solubility in an organic solvent under action of acid and an acid generator component which generates acid upon exposure; conducting exposure of the resist film; and patterning the resist film by positive development using a developing solution containing the organic solvent to form a resist pattern, wherein a resin component containing a structural unit derived from an acrylate ester which may have a hydrogen atom bonded to a carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by action of acid is used as the component (A), and a developing solution that contains a polar organic solvent but contains substantially no alkali components is used as the developing solution.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：使用含有在酸的作用下在有机溶剂中显示增加的溶解度的基础组分（A）的抗蚀剂组合物和在曝光时产生酸的酸产生剂组分的抗酸剂组合物在基材上形成抗蚀剂膜; 进行抗蚀剂膜的曝光; 通过使用含有有机溶剂的显影液进行正显影来形成抗蚀剂膜以形成抗蚀剂图案，其中含有可以具有与α-碳原子上的碳原子键合的氢原子的丙烯酸酯的结构单元的树脂组分， 作为成分（A），使用被取代基取代的含有酸分解性基团的酸分解性基团，作为成分（A），使用含有极性有机溶剂但不含碱成分的显影液作为显影液 。

    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    52.
    发明申请
    RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    耐蚀组合物和形成耐力图案的方法

    公开(公告)号：US20120196226A1

    公开(公告)日：2012-08-02

    申请号：US13343481

    申请日：2012-01-04

    申请人： Shinji Kumada ,  Satoshi Maemori ,  Masatoshi Arai ,  Daiju Shiono

    发明人： Shinji Kumada ,  Satoshi Maemori ,  Masatoshi Arai ,  Daiju Shiono

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/20

    摘要： A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.

    摘要翻译： 一种抗蚀剂组合物，其包含在酸的作用下在显影液中溶解度变化的碱成分（A），可以用于使用波长为193nm以下的光作为曝光光源的光刻工序， 暴露时产生酸的酸产生剂组分（B）和具有如下所示的通式（c0）表示的结构单元（c0）的聚合化合物（C），其中聚合化合物（C）的量小于25 相对于100质量份的基础成分（A）为质量份。 在该式中，R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R1表示具有一个或多个伯或仲醇羟基的有机基团，或 链状叔醇羟基。

    Decomposable composition and method for using the same
    54.
    发明申请
    Decomposable composition and method for using the same 审中-公开
    分解组合物及其使用方法

    公开(公告)号：US20070275328A1

    公开(公告)日：2007-11-29

    申请号：US11807042

    申请日：2007-05-24

    申请人： Daiju Shiono ,  Hideo Hada

    发明人： Daiju Shiono ,  Hideo Hada

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0045 ,  G03F7/0392

    摘要： A decomposable composition including a compound (I) represented by general formula (I) shown below and a compound (II) represented by general formula (II) shown below: [wherein R1 represents a hydrogen atom, a halogen atom, an alkyl group or a halogenated alkyl group; and R2, R3 and R4 each independently represents a monovalent organic group.]

    摘要翻译： 含有下述通式（I）表示的化合物（I）和下述通式（II）表示的化合物（II））的分解性组合物：[其中R 1表示氢原子， 卤素原子，烷基或卤代烷基; R 2，R 3和R 4各自独立地表示一价有机基团。

    Resist composition and method of forming resist pattern
    56.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号：US09012125B2

    公开(公告)日：2015-04-21

    申请号：US13343481

    申请日：2012-01-04

    申请人： Shinji Kumada ,  Satoshi Maemori ,  Masatoshi Arai ,  Daiju Shiono

    发明人： Shinji Kumada ,  Satoshi Maemori ,  Masatoshi Arai ,  Daiju Shiono

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/20

    摘要： A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.

    摘要翻译： 一种抗蚀剂组合物，其包含在酸的作用下在显影液中溶解度变化的碱成分（A），可以用于使用波长为193nm以下的光作为曝光光源的光刻工序， 暴露时产生酸的酸产生剂组分（B）和具有如下所示的通式（c0）表示的结构单元（c0）的聚合化合物（C），其中聚合化合物（C）的量小于25 相对于100质量份的基础成分（A）为质量份。 在该式中，R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R1表示具有一个或多个伯或仲醇羟基的有机基团，或 链状叔醇羟基。