Silicon carbide single crystal and method and apparatus for producing the same
    52.
    发明授权
    Silicon carbide single crystal and method and apparatus for producing the same 失效
    碳化硅单晶及其制造方法和装置

    公开(公告)号:US07387679B2

    公开(公告)日:2008-06-17

    申请号:US10558369

    申请日:2004-05-28

    IPC分类号: C30B25/12 C30B25/14

    摘要: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

    摘要翻译: 碳化硅单晶的制造方法在反应容器的第一端部存储升华规律材料, 在基本面向反应容器中的升华规律材料的第二端部上设置碳化硅单晶晶种; 并将升华的升华定律材料再结晶在晶种上以生长碳化硅单晶,其中在反应容器中设置密封部分以在设置在密封部分中的晶种上生长碳化硅单晶,同时防止 泄漏的升华升华法物质从大气升华。

    Intracellular calcium concentration increase inhibitors
    53.
    发明授权
    Intracellular calcium concentration increase inhibitors 失效
    细胞内钙浓度增加抑制剂

    公开(公告)号:US07217701B2

    公开(公告)日:2007-05-15

    申请号:US10492150

    申请日:2002-10-10

    IPC分类号: A61K31/69 C07F5/02

    CPC分类号: A61K31/69

    摘要: An intracellular calcium concentration increase inhibitor containing as the active ingredient (1) a boron compound represented by the formula (I). The compound represented by the formula (I) inhibits the increase of the intracellular calcium concentration, and therefore it is deemed to be useful as an agent for the prophylaxis and/or treatment of platelet aggregation, ischemic diseases in hearts and brains, immune deficiency diseases, allorgosis, bronchial asthma, hypertension, cerebrovascular spasm, various renal diseases, pancreatitis, Alzheimer's disease, etc.

    摘要翻译: 含有作为活性成分的细胞内钙浓度增加抑制剂(1)由式(I)表示的硼化合物。 由式(I)表示的化合物抑制细胞内钙浓度的增加,因此被认为可用作预防和/或治疗血小板聚集,心脏和脑中缺血性疾病,免疫缺陷病 ,多动症,支气管哮喘,高血压,脑血管痉挛,各种肾脏疾病,胰腺炎,阿尔茨海默病等。

    11,15-O-dialkylprostaglandin E derivatives, process for producing the same, and drugs containing the same as the active ingredient
    55.
    发明授权
    11,15-O-dialkylprostaglandin E derivatives, process for producing the same, and drugs containing the same as the active ingredient 有权
    11,15-O-二烷基前列腺素E衍生物,其制备方法和含有与活性成分相同的药物

    公开(公告)号:US06288119B1

    公开(公告)日:2001-09-11

    申请号:US09355626

    申请日:1999-08-02

    IPC分类号: A61K315575

    CPC分类号: A61K31/5575 C07C405/00

    摘要: The present invention provides 11,15-O-dialkyl prostaglandin E derivatives of formula (I) (wherein all symbols are as described in Specification), or non-toxic salts thereof or cyclodextrin clathrates thereof, processes for the preparation thereof and pharmaceutical compositions containing them as active ingredient. A compound of formula (I) binds strongly and acts on EP3 receptor which is a subtype of PGE2 receptor and therefore is useful for prevention and/or treatment of liver diseases, kidney diseases, pancreatitis, myocardial infarction etc.

    摘要翻译: 本发明提供式(I)(其中所有符号如说明书中所述)的11,15-O-二烷基前列腺素E衍生物或其无毒盐或环糊精包合物,其制备方法和含有 它们作为活性成分。式(I)化合物强烈结合并作用于作为PGE2受体亚型的EP3受体,因此可用于预防和/或治疗肝脏疾病,肾脏疾病,胰腺炎,心肌梗死等。

    Naphthyloxyacetic acid derivatives
    56.
    发明授权
    Naphthyloxyacetic acid derivatives 失效
    萘氧基乙酸衍生物

    公开(公告)号:US5753700A

    公开(公告)日:1998-05-19

    申请号:US574133

    申请日:1995-12-18

    摘要: A naphthyloxyacetic acid derivative of the formula (I) ##STR1## wherein R.sup.1 is H, alkyl, alkylene-(--COOR.sup.10, --OH, --CONR.sup.4 R.sup.5, --CONR.sup.6 -alkylene-OH, --NR.sup.4 R.sup.5, -cyano or -tetrazolyl); A is single bond, alkylene, alkenylene, --S-alkylene, --O-alkylene; B is NR.sup.3 CO, CONR.sup.3 ; R.sup.2 is (1) alkyl (2) alkenyl, (3) alkyl or alkenyl substituted by 1-3 of phenyl, cycloalkyl, naphthyl and heterocyclic ring containing nitrogen atom (the said ring may be substituted by 1-3 of alkyl, alkoxy and halogen etc.), (4) NR.sup.7 R.sup.8 or (5) alkylene-NR.sup.7 R.sup.8 ; non-toxic salt thereof, non-toxic acid addition salt thereof and hydrate thereof can bind the PGE.sub.2 receptor and exhibits the activity to antagonize or agonize for PGE.sub.2, therefore, they are useful as PGE.sub.2 antagonist or PGE.sub.2 agonist.

    摘要翻译: (I)的萘氧基乙酸衍生物其中R 1为H,烷基,亚烷基 - ( - COOR 10,-OH,-CONR 4 R 5,-CONR 6 - 亚烷基-OH,-NR 4 R 5 - 氰基或四唑基 ); A是单键,亚烷基,亚烯基,-S-亚烷基,-O-亚烷基; B为NR3CO,CONR3; R2是(1)烷基(2)烯基,(3)被1-3个含氮原子的苯基,环烷基,萘基和杂环取代的烷基或链烯基(所述环可以被1-3个烷基,烷氧基和 卤素等),(4)NR7R8或(5)亚烷基-NR7R8; 其无毒盐,其无毒酸加成盐和其水合物可结合PGE2受体并表现出拮抗或激动PGE2的活性,因此它们可用作PGE2拮抗剂或PGE2激动剂。

    Electrorheological semisolid
    57.
    发明授权
    Electrorheological semisolid 失效
    电流变半固体

    公开(公告)号:US5352718A

    公开(公告)日:1994-10-04

    申请号:US779906

    申请日:1991-10-21

    CPC分类号: C10M171/001 C08K3/04

    摘要: The present invention relates to an electrorheological semisolid capable of changing the rheological characteristics by an application of voltage. The semisolid is composed of 20-70 weight. Parts of carbonaceous particulates having an average particle size of 0.1-500 .mu.m and a carbon/hydrogen atomic ratio (C/H ratio) of 1.2-5 which are dispersed in 80-30 weight % of a dispersion medium comprising a partially crosslinked electric insulating polymer having a penetration of 40-475 at 25.degree. C., or into 80-30 weight % of a dispersion medium selected from an electric insulating oil having a viscosity of 5000 to 10.sup.9 centistokes at 25.degree. C. and an electric insulating polymer having a viscosity of 5000 to 10.sup.9 centistokes at 25.degree. C.

    摘要翻译: 本发明涉及能够通过施加电压改变流变特性的电流变半固体。 半固体由20-70重量组成。 部分平均粒度为0.1-500μm的碳质颗粒和碳原子/氢原子比(C / H比)为1.2-5,分散在80-30重量%的包含部分交联的电 绝缘聚合物,其在25℃下的渗透率为40-475,或者为80-30重量%的选自在25℃下粘度为5000至109厘沲的电绝缘油的分散介质和电绝缘聚合物 在25℃下的粘度为5000至109厘沲

    Electroviscous fluid
    58.
    发明授权
    Electroviscous fluid 失效
    电磁流体

    公开(公告)号:US5087382A

    公开(公告)日:1992-02-11

    申请号:US400134

    申请日:1989-08-29

    IPC分类号: C10M171/00

    CPC分类号: C10M171/001

    摘要: The electroviscous fluid is a suspension composed of a finely divided dielectric solid dispersed in an electrically nonconductive oil. The viscosity of the fluid increases swiftly and reversibly under an influence of electric field applied thereto and the fluid turns to a state of plastic or solid when the influence is sufficiently strong.The electroviscous fluid of the present invention comprises 1-60% by weight of a dispersed phase of carbonaceous particulates having average particle size of 0.01-100 micrometer, and 99-40% by weight of a continuous liquid phase of an electric insulating oil having a viscosity of 0.65-500 centistokes at room temperature.The electroviscous fluid exhibits an excellent electroviscous effect even at a high temperature with a low electric power consumption together with maintaining the improved electroviscous effect for a long period of time.

    Silicon carbide single crystal wafer and producing method thereof
    60.
    发明授权
    Silicon carbide single crystal wafer and producing method thereof 有权
    碳化硅单晶晶片及其制造方法

    公开(公告)号:US08221549B2

    公开(公告)日:2012-07-17

    申请号:US11912207

    申请日:2006-04-19

    申请人: Takayuki Maruyama

    发明人: Takayuki Maruyama

    IPC分类号: C30B25/20

    摘要: A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm2 over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.

    摘要翻译: 一种碳化硅单晶晶片,其中将基板从小于2°的α型碳化硅单晶的(0001)c面和OFF方向切断,其中偏离(11 -20)方向小于10°时,从在晶片外延生长的晶片的表面露出的基本上三角形层叠缺陷的数量在晶片的整个表面上小于4 / cm 2。 本发明提供一种能够提高块体碳化硅单晶的利用率,元素特性和切割性的碳化硅单晶晶片的制造方法以及通过这种制造方法获得的碳化硅单晶晶片。