摘要:
A method for forming an integrated circuit system is provided including forming a substrate; forming a stack over the substrate, the stack having a sidewall and formed from a charge trap layer and a semi-conducting layer; and slot plane antenna oxidizing the stack for forming a protection enclosure having a protection layer along the sidewall.
摘要:
A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.
摘要:
An intracellular calcium concentration increase inhibitor containing as the active ingredient (1) a boron compound represented by the formula (I). The compound represented by the formula (I) inhibits the increase of the intracellular calcium concentration, and therefore it is deemed to be useful as an agent for the prophylaxis and/or treatment of platelet aggregation, ischemic diseases in hearts and brains, immune deficiency diseases, allorgosis, bronchial asthma, hypertension, cerebrovascular spasm, various renal diseases, pancreatitis, Alzheimer's disease, etc.
摘要:
In order to provide an RF coil for effective imaging from a vertex to an upper T spine, a coil surrounding a forehead portion of an imaging object, a coil surrounding a nose portion over the protuberance of the nose, a coil surrounding the neck, and a coil holding the upper T spine, are integrally molded to construct a coil assembly which can be separated into front and rear parts.
摘要:
The present invention provides 11,15-O-dialkyl prostaglandin E derivatives of formula (I) (wherein all symbols are as described in Specification), or non-toxic salts thereof or cyclodextrin clathrates thereof, processes for the preparation thereof and pharmaceutical compositions containing them as active ingredient. A compound of formula (I) binds strongly and acts on EP3 receptor which is a subtype of PGE2 receptor and therefore is useful for prevention and/or treatment of liver diseases, kidney diseases, pancreatitis, myocardial infarction etc.
摘要:
A naphthyloxyacetic acid derivative of the formula (I) ##STR1## wherein R.sup.1 is H, alkyl, alkylene-(--COOR.sup.10, --OH, --CONR.sup.4 R.sup.5, --CONR.sup.6 -alkylene-OH, --NR.sup.4 R.sup.5, -cyano or -tetrazolyl); A is single bond, alkylene, alkenylene, --S-alkylene, --O-alkylene; B is NR.sup.3 CO, CONR.sup.3 ; R.sup.2 is (1) alkyl (2) alkenyl, (3) alkyl or alkenyl substituted by 1-3 of phenyl, cycloalkyl, naphthyl and heterocyclic ring containing nitrogen atom (the said ring may be substituted by 1-3 of alkyl, alkoxy and halogen etc.), (4) NR.sup.7 R.sup.8 or (5) alkylene-NR.sup.7 R.sup.8 ; non-toxic salt thereof, non-toxic acid addition salt thereof and hydrate thereof can bind the PGE.sub.2 receptor and exhibits the activity to antagonize or agonize for PGE.sub.2, therefore, they are useful as PGE.sub.2 antagonist or PGE.sub.2 agonist.
摘要:
The present invention relates to an electrorheological semisolid capable of changing the rheological characteristics by an application of voltage. The semisolid is composed of 20-70 weight. Parts of carbonaceous particulates having an average particle size of 0.1-500 .mu.m and a carbon/hydrogen atomic ratio (C/H ratio) of 1.2-5 which are dispersed in 80-30 weight % of a dispersion medium comprising a partially crosslinked electric insulating polymer having a penetration of 40-475 at 25.degree. C., or into 80-30 weight % of a dispersion medium selected from an electric insulating oil having a viscosity of 5000 to 10.sup.9 centistokes at 25.degree. C. and an electric insulating polymer having a viscosity of 5000 to 10.sup.9 centistokes at 25.degree. C.
摘要:
The electroviscous fluid is a suspension composed of a finely divided dielectric solid dispersed in an electrically nonconductive oil. The viscosity of the fluid increases swiftly and reversibly under an influence of electric field applied thereto and the fluid turns to a state of plastic or solid when the influence is sufficiently strong.The electroviscous fluid of the present invention comprises 1-60% by weight of a dispersed phase of carbonaceous particulates having average particle size of 0.01-100 micrometer, and 99-40% by weight of a continuous liquid phase of an electric insulating oil having a viscosity of 0.65-500 centistokes at room temperature.The electroviscous fluid exhibits an excellent electroviscous effect even at a high temperature with a low electric power consumption together with maintaining the improved electroviscous effect for a long period of time.
摘要:
Disclosed is an EP1 antagonist, particularly a compound represented by the formula (I): wherein all symbols are as defined in the description, a salt thereof, a solvate thereof or a prodrug thereof. The compound, a salt thereof, a solvate thereof or a prodrug thereof is effective for prevention, treatment and/or symptom improvement of a dysuria (e.g., slow stream, splitting or spraying of the urine stream, intermittent stream, hesitancy, straining to void or terminal dribble).
摘要:
A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm2 over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.
摘要翻译:一种碳化硅单晶晶片,其中将基板从小于2°的α型碳化硅单晶的(0001)c面和OFF方向切断,其中偏离(11 -20)方向小于10°时,从在晶片外延生长的晶片的表面露出的基本上三角形层叠缺陷的数量在晶片的整个表面上小于4 / cm 2。 本发明提供一种能够提高块体碳化硅单晶的利用率,元素特性和切割性的碳化硅单晶晶片的制造方法以及通过这种制造方法获得的碳化硅单晶晶片。