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69 条记录 (耗时 0.033 秒)

    Benzenesulfonamide compounds
    1.
    发明授权
    Benzenesulfonamide compounds 失效
    苯磺酰胺化合物

    公开(公告)号：US06235777B1

    公开(公告)日：2001-05-22

    申请号：US09078577

    申请日：1998-05-14

    申请人： Shuichi Ohuchida ,  Yuuki Nagao ,  Takayuki Maruyama

    发明人： Shuichi Ohuchida ,  Yuuki Nagao ,  Takayuki Maruyama

    IPC分类号： A61K3121

    CPC分类号： C07C311/19 ,  C07C2601/14 ,  C07C2601/16 ,  C07C2601/18 ,  C07C2602/42 ,  C07C2602/44

    摘要： A benzenesulfonamide compound of the formula (I) (R1 is hydroxy, C1˜4 alkoxy, NR6R7 (each R6 and R7 is, independently, H or C1˜4 alkyl.); R2 is H, C1˜4 alkyl; R3, R4 are C1˜4 alkyl, halogen trifluoromethyl; R5 is H, C1˜4 alkyl, halogen, trifluoromethyl; Y is cis-vinylene, trans-vinylene; and the symbol (i) is single bond, double bond.), non-toxic salt thereof or cyclodextrin clathrate thereof and an antagonist of EP1 receptor which is a prostaglandin E2 receptor subtype comprising it as an active ingredient. The present invention compounds of the of the formula (I) can bind strongly to EP1 receptor which is a prostaglandin E2 receptor subtype and scarcely bind to the other receptor subtypes. Therefore, they are considered to be useful as antipyretic agents, as analgesics or as treating agent for pollakiuria having little side effect.

    摘要翻译： 式（I）的苯磺酰胺化合物（R 1是羟基，C 1-4烷氧基，NR 6 R 7（各R 6和R 7独立地是H或C 1-4烷基）; R 2是H，C 1-4烷基; R 3，R 4 是C1〜4烷基，卤素三氟甲基; R5是H，C1〜4烷基，卤素，三氟甲基; Y是顺式亚乙烯基，反式亚乙烯基;符号（i）是单键，双键），无毒 其盐或环糊精包合物和作为前列腺素E2受体亚型的EP1受体的拮抗剂，其包含其作为活性成分。本发明式（I）的化合物可以强烈地与作为前列腺素E2受体的EP1受体结合 亚型，几乎不结合其他受体亚型。 因此，它们被认为可用作解热剂，作为止痛剂或作为尿酸治疗剂具有很小的副作用。

    11,15-O-dialkylprostaglandin E derivatives, process for producing the same, and drugs containing the same as the active ingredient
    2.
    发明授权
    11,15-O-dialkylprostaglandin E derivatives, process for producing the same, and drugs containing the same as the active ingredient 有权
    11,15-O-二烷基前列腺素E衍生物，其制备方法和含有与活性成分相同的药物

    公开(公告)号：US06288119B1

    公开(公告)日：2001-09-11

    申请号：US09355626

    申请日：1999-08-02

    申请人： Shuichi Ohuchida ,  Takayuki Maruyama

    发明人： Shuichi Ohuchida ,  Takayuki Maruyama

    IPC分类号： A61K315575

    CPC分类号： A61K31/5575 ,  C07C405/00

    摘要： The present invention provides 11,15-O-dialkyl prostaglandin E derivatives of formula (I) (wherein all symbols are as described in Specification), or non-toxic salts thereof or cyclodextrin clathrates thereof, processes for the preparation thereof and pharmaceutical compositions containing them as active ingredient. A compound of formula (I) binds strongly and acts on EP3 receptor which is a subtype of PGE2 receptor and therefore is useful for prevention and/or treatment of liver diseases, kidney diseases, pancreatitis, myocardial infarction etc.

    摘要翻译： 本发明提供式（I）（其中所有符号如说明书中所述）的11,15-O-二烷基前列腺素E衍生物或其无毒盐或环糊精包合物，其制备方法和含有 它们作为活性成分。式（I）化合物强烈结合并作用于作为PGE2受体亚型的EP3受体，因此可用于预防和/或治疗肝脏疾病，肾脏疾病，胰腺炎，心肌梗死等。

    Precision trench formation through oxide region formation for a semiconductor device
    4.
    发明授权
    Precision trench formation through oxide region formation for a semiconductor device 有权
    通过半导体器件的氧化物区形成形成精密沟槽

    公开(公告)号：US07871896B2

    公开(公告)日：2011-01-18

    申请号：US12134087

    申请日：2008-06-05

    申请人： Fumihiko Inoue ,  Takayuki Maruyama ,  Tomohiro Watanabe

    发明人： Fumihiko Inoue ,  Takayuki Maruyama ,  Tomohiro Watanabe

    IPC分类号： H01L21/762

    CPC分类号： H01L21/3065 ,  H01L21/30604 ,  H01L29/785

    摘要： Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.

    摘要翻译： 公开了用于精密沟槽形成的结构和方法。 在一个实施例中，一种制造半导体器件的方法包括通过对半导体衬底的一部分进行氧离子注入，在半导体衬底中形成第一含氧区域，并且通过使用其中包含的氧的第一含氧区域氧化 对所述半导体衬底进行热处理，其中所述第一含氧区域被转换为第一氧化物区域。 该方法还包括通过消除第一氧化物区域在半导体衬底中形成沟槽，其中执行热处理包括使第一含氧区域处于低于氧的气体。

    SONOS-NAND device having a storage region separated between cells
    5.
    发明授权
    SONOS-NAND device having a storage region separated between cells 有权
    具有在单元之间分离的存储区域的SONOS-NAND装置

    公开(公告)号：US07838406B2

    公开(公告)日：2010-11-23

    申请号：US12343998

    申请日：2008-12-24

    申请人： Takayuki Maruyama ,  Fumihiko Inoue

    发明人： Takayuki Maruyama ,  Fumihiko Inoue

    IPC分类号： H01L21/3205

    CPC分类号： H01L27/11565 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/66833

    摘要： The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same.

    摘要翻译： 本发明是一种半导体器件，包括具有沟槽的半导体衬底，设置在沟槽的侧表面上的第一绝缘膜，与设置在沟槽中的第一绝缘膜不同的材料的第二绝缘膜， 线延伸以与半导体衬底上方的沟槽相交;栅极绝缘膜，其不同于第一绝缘膜的材料的栅极绝缘膜，该第一绝缘膜在字线的延伸方向上被沟槽分隔，并且设置在该字线的宽度方向上的中心区域的下方 字线和电荷存储层，并且在字线的宽度方向上的两端设置用于包围栅极绝缘膜的电荷存储层及其制造方法。

    Wire wound electronic part
    6.
    发明授权
    Wire wound electronic part 有权
    绕线电子部件

    公开(公告)号：US07786838B2

    公开(公告)日：2010-08-31

    申请号：US12197941

    申请日：2008-08-25

    申请人： Yoshinari Nakada ,  Takayuki Maruyama ,  Hideharu Suzuki ,  Koihci Iguchi ,  Takahiro Samata ,  Satoshi Kimura

    发明人： Yoshinari Nakada ,  Takayuki Maruyama ,  Hideharu Suzuki ,  Koihci Iguchi ,  Takahiro Samata ,  Satoshi Kimura

    IPC分类号： H01F5/00

    CPC分类号： H01F27/292 ,  H01F1/344 ,  H01F17/045 ,  H01F41/005 ,  H01F41/10 ,  H01F2017/048 ,  Y10T29/4902

    摘要： A wire wound electronic part includes a ferrite core comprising ferrite having a columnar wire wound core and flanges formed at both ends thereof, a coil conductor wound around the wire wound core of the ferrite core, and at least a pair of terminal electrodes having a Cu conduction layer disposed to the outer surface of the flange, in which both ends of the coil conductor wound around the wire wound core are conductively connected to the terminal electrodes. The terminal electrode is formed by coating an electrode paste containing a Cu powder and a glass frit to the outer surface of the ferrite core, and then applying a heat treatment to the ferrite core. There is a reaction layer of a portion of the ferrite core and the glass frit at a boundary between the ferrite core and the Cu conduction layer. The terminal electrodes has the peel strength identical with that of an existent Ag terminal electrode, without forming a plate layer.

    摘要翻译： 绕线电子部件包括铁氧体磁芯，该铁氧体磁芯包括铁氧体，该铁氧体具有圆柱形铁芯和其两端形成的凸缘，缠绕在铁氧体磁芯的绕线芯上的线圈导体，以及至少一对具有Cu 导电层设置在凸缘的外表面上，其中卷绕在绕线芯上的线圈导体的两端导电地连接到端子电极。 端子电极通过将包含Cu粉末和玻璃料的电极浆料涂覆到铁氧体磁芯的外表面，然后对铁氧体磁芯进行热处理而形成。 在铁氧体磁芯和Cu导电层之间的边界处存在铁氧体磁芯和玻璃料的一部分的反应层。 端子电极的剥离强度与存在的Ag端子电极的剥离强度相同，而不形成板层。

    Process for manufacturing wafer of silicon carbide single crystal
    7.
    发明授权
    Process for manufacturing wafer of silicon carbide single crystal 有权
    制造碳化硅单晶晶片的工艺

    公开(公告)号：US07785414B2

    公开(公告)日：2010-08-31

    申请号：US11597568

    申请日：2005-05-25

    申请人： Takayuki Maruyama ,  Toshimi Chiba

    发明人： Takayuki Maruyama ,  Toshimi Chiba

    IPC分类号： C30B23/00 ,  C30B28/12

    CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529

    摘要： A process for manufacturing a wafer of a silicon carbide single crystal having: cutting a wafer from an α (hexagonal)-silicon carbide single crystal so that the off-angle is totally in the range from 0.4 to 2° to a plane obtained in perpendicular to the [0001]c axis of the silicon carbide single crystal; disposing the wafer in a reaction vessel; feeding a silicon source gas and carbon source gas in the reaction vessel; and epitaxially growing the α (hexagonal) silicon carbide single crystal on the wafer by allowing the silicon source gas and carbon source gas to react.

    摘要翻译： 一种用于制造碳化硅单晶晶片的方法，其特征在于：从α（六方晶） - 碳化硅单晶切割晶片，使得所述偏角完全在垂直方向获得的平面为0.4至2° 到碳化硅单晶的[c]轴; 将晶片设置在反应容器中; 在反应容器内供给硅源气体和碳源气体; 并通过使硅源气体和碳源气体反应而在晶片上外延生长α（六方晶）碳化硅单晶。

    THERAPEUTIC AGENT FOR URINARY EXCRETION DISORDER
    9.
    发明申请
    THERAPEUTIC AGENT FOR URINARY EXCRETION DISORDER 有权
    尿毒症治疗药物

    公开(公告)号：US20100076038A1

    公开(公告)日：2010-03-25

    申请号：US12527340

    申请日：2008-02-15

    申请人： Takayuki Maruyama ,  Hiroki Okada ,  Takashi Konemura

    发明人： Takayuki Maruyama ,  Hiroki Okada ,  Takashi Konemura

    IPC分类号： A61K31/426 ,  A61P13/12

    CPC分类号： C07D213/71 ,  A61K31/426 ,  A61K31/4402 ,  A61K45/06 ,  C07D277/20 ,  C07D277/36 ,  A61K2300/00

    摘要： Disclosed is an EP1 antagonist, particularly a compound represented by the formula (I): wherein all symbols are as defined in the description, a salt thereof, a solvate thereof or a prodrug thereof. The compound, a salt thereof, a solvate thereof or a prodrug thereof is effective for prevention, treatment and/or symptom improvement of a dysuria (e.g., slow stream, splitting or spraying of the urine stream, intermittent stream, hesitancy, straining to void or terminal dribble).

    摘要翻译： 公开了EP1拮抗剂，特别是由式（I）表示的化合物：其中所有符号如说明书中所定义，其盐，其溶剂化物或其前药。 该化合物，其盐，其溶剂合物或其前体药物对于排尿困难的预防，治疗和/或症状改善（例如，缓慢的流，尿流的分裂或喷雾，间歇流，犹豫，紧张到空隙中是有效的 或终点运球）。