摘要:
Provided is a phosphorus molybdenum amine compound, represented by the following general formula (I). where R1 to R6 each independently represent a hydrogen atom or a hydrocarbon group and p represents a number of 1 to 5, provided that all of R1 to R6 are can not all be hydrogen atoms at the same time and the phosphorus molybdenum compound is obtained by reducing a hexavalent molybdenum compound with a reducing agent, and then reacting the resulting with an acidic phosphate after neutralization with a mineral acid.
摘要:
A hard coating film having oxidation resistance and wear resistance superior to those of conventional coating films formed of TiAlN, TiCrAlN, TiCrAlSiBN, CrAlSiBN, NbCrAlSiBN, or the like. The hard coating film of the present invention has a component composition represented by the formula: (TiaCrbAlcMdBe)(CxN1-x), wherein 0≦a≦0.2, 0.05≦b≦0.4, 0.45≦c≦0.65, 0.005≦d≦0.05, 0≦e≦0.15, a+b+c+d+e=1, and 0≦x≦0.5; where M denotes at least one species selected from the group consisting of Ce, Pr, and Sc; variables a, b, c, d, and e indicate the atomic ratios of Ti, Cr, Al, M, and B respectively; and variable x indicates the atomic ratio of C.
摘要翻译:具有比由TiAlN,TiCrAlN,TiCrAlSiBN,CrAlSiBN,NbCrAlSiBN等形成的常规涂膜的耐氧化性和耐磨性优异的硬涂层膜。 本发明的硬涂膜具有由下式表示的组分组成:(TiaCrbAlcMdBe)(CxN1-x),其中0和nlE; a≦̸ 0.2,0.05≦̸ b≦̸ 0.4,0.45≦̸ c≦̸ 0.65,0.005& d≦̸ 0.05,0和nlE; e≦̸ 0.15,a + b + c + d + e = 1,0≦̸ x≦̸ 0.5; 其中M表示选自Ce,Pr和Sc中的至少一种; 变量a,b,c,d和e分别表示Ti,Cr,Al,M和B的原子比; 变量x表示C的原子比。
摘要:
A paper treating agent comprising 100 parts by mass of organopolysiloxane (A), from 100 to 100,000 parts by mass of water (E), and 0.1 to 100 parts by mass of a surfactant (F), characterized in that the agent further comprises 50 to 1,000 parts by mass of a cellulosic resin (C), wherein 0.5 to 2.5 hydroxyl groups per glucose unit of said cellulosic resin are etherized or esterified, and a viscosity of an aqueous 2% solution of said cellulosic resin is from 2 to 100 mPa·s.
摘要:
Provided is a nitrogen-containing amorphous carbon film exhibiting excellent durability even when formed on the surface of a sliding member used under high surface pressure or under a lubricating oil environment. The nitrogen-containing amorphous carbon film is formed by physical evaporation onto the sliding surface of a sliding member and contains 8.0 to 12.0 atomic % of hydrogen and 3.0 to 14.0 atomic % of nitrogen. The nitrogen-containing amorphous carbon film is effective when, for instance, formed on at least one sliding surface of a sliding member, such as a sliding part of an automobile engine.
摘要:
This invention is an algorithm for estimating the topology of a protein by determination of the free energy from a global entropy evaluation model combined with local correction methods.
摘要:
There is described an image forming system, which confirms a finished state of an image at any time during the implementation of the image forming job as needed. The system includes: an image forming section to respectively form images on recording materials; a stacking section to stack the recording materials continuously ejected from the image forming section; an instruction inputting section from which an operator inputs instruction information; an ejecting section to stack a part of the recording materials in such a manner that the operator can pick up stacked recording materials by hand; a controlling section to conduct controlling operations in response to the instruction information, inputted from the instruction inputting section during an implementation of an image forming job including an operation for stacking the recording materials ejected from the image forming section, in order to eject the part of the recording materials onto the ejecting section.
摘要:
The present invention provides a transparent electroconductive oxide layer having a high transmittance and a high electroconductivity and further a thin-film photoelectric converter having a high photoelectric conversion efficiency by applying the transparent electroconductive oxide layer to a transparent electrode layer of a photoelectric converter. The transparent electroconductive oxide layer in the present invention is deposited on a transparent substrate with a first and a second impurities contained in the transparent electroconductive oxide layer, especially in the vicinity of a surface of the layer in a higher concentration, and carbon atoms contained in the vicinity of the surface of the layer, thereby achieving a high transmittance and a high electroconductivity simultaneously and thus solving the problem.
摘要:
Disclosed herein is an imaging device including: an imaging lens configured to have an aperture stop; an imaging element configured to include a plurality of pixels two-dimensionally arranged along a longitudinal direction and a lateral direction and acquire imaging data based on received light; and a microlens array configured to be disposed between the imaging lens and the imaging element and include a plurality of microlenses, a pixel area composed of m×n pixels (m and n denote a number equal to or larger than 2 in the longitudinal direction and the lateral direction) in the imaging element being assigned to a respective one of the microlenses, wherein positional displacement smaller than a width of one pixel is set between the microlens and the pixel area.
摘要:
Disclosed herein is an imaging device, including: an imaging lens having an aperture stop; an imaging element adapted to obtain image data based on received light; and a microlens array provided in the focal plane of the imaging lens between the imaging lens and imaging element, the microlens array including a plurality of microlenses arranged in such a manner that each microlens is associated with a plurality of imaging pixels of the imaging element, wherein the arrangement of the microlenses of the microlens array is corrected from an equidistant arrangement to a non-linear arrangement according to the height of the image from the imaging lens on the imaging element.
摘要:
A hard film formed of a material containing a (M1−xSix)(C1−dNd) compound, wherein M is at least one of A1 and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, wherein x, 1−x, d and 1−d are atomic ratios of Si, M, N and C, respectively.