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    Semiconductor device that includes a gate insulating layer with three different thicknesses
    53.
    发明授权
    Semiconductor device that includes a gate insulating layer with three different thicknesses 有权
    包括具有三种不同厚度的栅极绝缘层的半导体器件

    公开(公告)号：US07224028B2

    公开(公告)日：2007-05-29

    申请号：US10960015

    申请日：2004-10-08

    申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

    发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

    IPC分类号： H01L29/76

    CPC分类号： H01L29/66757 ,  H01L27/1214 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66598 ,  H01L29/78621 ,  H01L2029/7863

    摘要： In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.

    摘要翻译： 在诸如有源矩阵显示器的半导体器件的制造中，在光刻中对抗蚀剂掩模进行图案化的需要增加了制造工艺中的步骤数量和完成它们所需的时间，因此代表了大量成本。 本发明提供了一种用于在半导体层中以自对准的方式将杂质元素掺杂到半导体层303中以形成两层栅电极的上层（第二导电膜306）作为掩模来形成杂质区的方法。 杂质元素通过栅电极（第一导电膜305）的下层，并通过栅极绝缘膜304掺杂到半导体层中。 通过这种方式，在半导体层303中形成GOLD结构的LDD区域313。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    54.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20070111424A1

    公开(公告)日：2007-05-17

    申请号：US11620576

    申请日：2007-01-05

    申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/124 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78684 ,  H01L2029/7863

    摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

    摘要翻译： 当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。 在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和 可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。 因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。 并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

    Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same
    55.
    发明授权
    Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same 有权
    接线及其制造方法以及接线板及其制造方法

    公开(公告)号：US07169710B2

    公开(公告)日：2007-01-30

    申请号：US10099972

    申请日：2002-03-19

    申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

    发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

    IPC分类号： H01L21/461 ,  H01L21/302

    CPC分类号： H01L29/4908 ,  G02F2001/13629 ,  H01L23/5283 ,  H01L23/53223 ,  H01L27/3241 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L51/5203 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

    摘要翻译： 本发明的布线具有层状结构，其包括具有第一宽度的第一导电层（第一层），并且由选自W和Mo的一种或多种元素制成，或者主要包含元素的合金或化合物 ，具有小于第一宽度的第二宽度的低电阻的第二导电层（第二层），并且由主要包含Al的合金或化合物制成，以及具有小于第三宽度的第三宽度的第三导电层（第三层） 第二宽度，由主要含有Ti的合金或化合物制成。 利用这种结构，本发明完全准备好用于像素部分的放大。 第二导电层的至少边缘具有锥形横截面。 由于这种形状，可以获得令人满意的覆盖。

    Semiconductor device and manufacturing method thereof
    57.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US07161177B2

    公开(公告)日：2007-01-09

    申请号：US10833080

    申请日：2004-04-28

    申请人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    发明人： Hideomi Suzawa ,  Koji Ono ,  Toru Takayama ,  Tatsuya Arao ,  Shunpei Yamazaki

    IPC分类号： H01L29/04 ,  H01L31/0376

    CPC分类号： H01L27/124 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78684 ,  H01L2029/7863

    摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.

    摘要翻译： 当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。 在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和 可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。 因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。 并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

    User identity authentication system and user identity authentication method and mobile telephonic device
    59.
    发明授权
    User identity authentication system and user identity authentication method and mobile telephonic device 有权
    用户身份认证系统和用户身份认证方法和移动电话设备

    公开(公告)号：US07068254B2

    公开(公告)日：2006-06-27

    申请号：US09851415

    申请日：2001-05-09

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

    IPC分类号： G06K9/00

    CPC分类号： G06K9/0004 ,  G07C9/00158 ,  H04M1/673 ,  H04M1/72519

    摘要： It is an object to provide an user identity authentication system and an user identity authentication method with the Internet and a mobile information communication device. The mobile information communication device includes a liquid crystal device with a built-in image sensor. The image sensor reads individual information of a user, and user's identity is authenticated based on the individual information. A result of the authentication is unicast via the Internet. Alternatively, it is judged whether or not the result of the authentication is required to be unicast in accordance with a degree of requirement preset in the mobile information communication device or a destination terminal of communication, and the result is unicast via the Internet only when needed.

    摘要翻译： 本发明的目的是提供一种用户身份认证系统和用户身份认证方法与因特网和移动信息通信设备。 移动信息通信装置包括具有内置图像传感器的液晶装置。 图像传感器读取用户的个人信息，并且基于个人信息认证用户的身份。 认证的结果是通过互联网进行单播。 或者，根据在移动信息通信装置或通信目的地终端中预先设定的要求，判断认证结果是否需要单播，并且结果仅在需要时通过因特网单播 。