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公开(公告)号：US4323431A
公开(公告)日：1982-04-06
申请号：US175082
申请日：1980-08-04
IPC分类号： C07C46/10 , B01D3/10 , B01D3/14 , C07B31/00 , C07B63/00 , C07C45/00 , C07C50/18 , C07C67/00 , C07C201/00 , C07C201/16 , C07C205/47 , C07C209/00 , C07C209/84 , C07C225/34 , B01D1/22 , C07C97/24
CPC分类号： B01D3/14 , B01D3/103 , Y10S203/90
摘要： A high melting, high boiling organic compound is easily and stably purified by continuously supplying the molten organic compound to a rectification zone under a subatmospheric pressure and continuously distilling off and recovering vapors from the top of the rectification zone, while continuously withdrawing bottoms containing higher boiling impurities and/or involatile impurities than the desired compound from a reboiling zone at the bottom of the rectification zone to the outside of rectification system by means of a barometric leg, without any pretreatment of removing lower boiling impurities therefrom before the rectification, and without disturbing a pressure balance in the rectification system.
摘要翻译： 高熔点高沸点有机化合物通过在低于大气压的压力下将熔融的有机化合物连续供给至精馏区而容易且稳定地纯化，并连续地从精馏区的顶部蒸馏除去蒸气，同时连续地将含有较高沸点 杂质和/或非挥发性杂质比来自精馏区底部的再沸腾区域至整流系统外部的所需化合物通过气压腿，而无需在精馏之前从其中除去较低沸点的杂质，并且不受干扰 整改系统的压力平衡。
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公开(公告)号：US4272418A
公开(公告)日：1981-06-09
申请号：US544230
申请日：1975-01-27
申请人： Hiroshi Isa , Masatoshi Takahashi , Isamu Kadoya
发明人： Hiroshi Isa , Masatoshi Takahashi , Isamu Kadoya
IPC分类号： C08L27/00 , C07C51/00 , C07C53/126 , C07C67/00 , C08K5/09 , C08K5/098 , C08L1/00 , C07C51/14 , C07C53/128
摘要： A metallic salt of a fatty acid having the following formula is an excellent stabilizer for vinyl chloride resin: ##STR1## wherein two of R.sub.1, R.sub.2 and R.sub.3 are alkyls respectively while the remaining one is alkyl or hydrogen, and the total number of carbon atoms of R.sub.1, R.sub.2 and R.sub.3 is from 18 to 26.
摘要翻译： 具有下式的脂肪酸金属盐是氯乙烯树脂的优异稳定剂：其中R 1，R 2和R 3中的两个分别是烷基，而剩余的是烷基或氢，并且碳原子总数 的R 1，R 2和R 3为18至26。
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公开(公告)号：US08050085B2
公开(公告)日：2011-11-01
申请号：US10521553
申请日：2002-08-29
申请人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
发明人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/40975 , G07F7/084 , G11C11/005 , G11C16/0425 , G11C16/0433 , G11C16/16
摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.
摘要翻译： 根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及 中央处理单元（2），能够从/向外部输入/输出加密数据。 第一非易失性存储器用于存储要用于加密数据的加密密钥。 第二非易失性存储器用于存储要由中央处理单元处理的程序。 用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。 因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息 处理CPU。
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公开(公告)号：US07604901B2
公开(公告)日：2009-10-20
申请号：US10509756
申请日：2003-06-23
IPC分类号： H01M1/40
CPC分类号： H01M10/0569 , H01M10/0525 , H01M10/0567
摘要： A non-aqueous electrolyte secondary cell that has excellent high-temperature cycle characteristics and that is highly safe enough to prevent overcharge is provided. The non-aqueous electrolyte secondary cell has a positive electrode for reversibly intercalating-deintercalating lithium ions, a negative electrode for reversibly intercalating-deintercalating lithium ions, and a non-aqueous electrolyte having a non-aqueous solvent and an electrolyte salt. The non-aqueous solvent includes a cycloalkylbenzene derivative and an alkylbenzene derivative having a quaternary carbon directly bonded to a benzene ring and not having a cycloalkyl group directly bonded to the benzene ring.
摘要翻译： 提供具有优异的高温循环特性并且足够高以防止过充电的非水电解质二次电池。 非水电解质二次电池具有用于可逆地嵌入锂离子的正极，用于可逆地插入 - 脱嵌锂离子的负极和具有非水溶剂和电解质盐的非水电解质。 非水溶剂包括环烷基苯衍生物和具有与苯环直接键合并且不具有直接键合到苯环上的环烷基的季碳的烷基苯衍生物。
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公开(公告)号：US20090213649A1
公开(公告)日：2009-08-27
申请号：US10521553
申请日：2002-08-29
申请人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
发明人： Masatoshi Takahashi , Takanori Yamazoe , Kozo Katayama , Toshihiro Tanaka , Yutaka Shinagawa , Hiroshi Watase , Takeo Kanai , Nobutaka Nagasaki
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/40975 , G07F7/084 , G11C11/005 , G11C16/0425 , G11C16/0433 , G11C16/16
摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.
摘要翻译： 根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及 中央处理单元（2），能够从/向外部输入/输出加密数据。 第一非易失性存储器用于存储要用于加密数据的加密密钥。 第二非易失性存储器用于存储要由中央处理单元处理的程序。 用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。 因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息 处理CPU。
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56.发明申请Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device 审中-公开太阳能电池和太阳能电池的制造方法以及半导体装置的制造方法公开(公告)号：US20090020158A1
公开(公告)日：2009-01-22
申请号：US11918719
申请日：2006-04-11
申请人： Hiroyuki Ohtsuka , Masatoshi Takahashi , Naoki Ishikawa , Shigenori Saisu , Toyohiro Ueguri , Satoyuki Ojima , Takenori Watabe , Takeshi Akatsuka , Tsutomu Onishi
发明人： Hiroyuki Ohtsuka , Masatoshi Takahashi , Naoki Ishikawa , Shigenori Saisu , Toyohiro Ueguri , Satoyuki Ojima , Takenori Watabe , Takeshi Akatsuka , Tsutomu Onishi
CPC分类号： H01L21/2254 , H01L31/022425 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.
摘要翻译： 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，其中至少包括：含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂，以及 包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上，使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层，具有导电性的第二扩散层比第一扩散层的第二扩散层低，通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。 因此，可以提供制造太阳能电池的方法，该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池，并且通过简单且容易的方法，通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合，同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。
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57.发明授权Magnetic recording medium including a smooth coating layer on one side of the support 有权磁性记录介质包括在载体一侧的光滑涂层公开(公告)号：US07344786B2
公开(公告)日：2008-03-18
申请号：US10282145
申请日：2002-10-29
IPC分类号： G11B5/70
CPC分类号： G11B5/738 , G11B5/70 , G11B5/7026 , G11B5/842 , Y10T428/31786
摘要： A magnetic recording medium comprising a support having provided thereon a magnetic layer, wherein a smooth coating layer having a thickness of from 0.10 to 1 μm, surface roughness of 5 nm or less, and 20 or less per 900 μm2 of the protrusions having a height of 20 nm or more measured by an interatomic force microscope (AFM) is provided on the surface of at least one side of the support. And a method for producing a magnetic recording medium comprising a support having provided thereon a magnetic layer, which comprises providing a smooth coating layer having a thickness of from 0.10 to 1 μm, surface roughness of 5 nm or less, and 20 or less per 900 μm2 of the protrusions having a height of 20 nm or more measured by an interatomic force microscope (AFM) on the surface of at least one side of the support, and forming at least the magnetic layer on the smooth coating layer without performing rolling-up operation.
摘要翻译： 一种磁记录介质，包括在其上设置有磁性层的支撑体，其中厚度为0.10至1μm，表面粗糙度为5nm或更小的平滑涂层以及每900μm2的20μm或更小的光滑涂层， 通过原子力显微镜（AFM）测量的具有20nm或更高的高度的突起的SUP>提供在支撑体的至少一侧的表面上。 以及一种用于制造磁记录介质的方法，所述磁记录介质包括其上设置有磁性层的载体，其包括提供厚度为0.10-1μm的光滑涂层，表面粗糙度为5nm以下，每900个为20个以下 通过原子力显微镜（AFM）在支撑体的至少一侧的表面上测量的具有20nm或更高的高度的突起的2μm以上，并且至少在该支撑体的至少一个面上形成磁性层 光滑的涂层，不进行卷起操作。
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公开(公告)号：US07294779B2
公开(公告)日：2007-11-13
申请号：US10470242
申请日：2002-01-30
IPC分类号： H01L31/0236
CPC分类号： H01L31/035281 , H01L31/022425 , Y02E10/50
摘要： A solar cell 1 has a number of grooves 2 formed in parallel with each other on a first main surface 24a of a silicon single crystal substrate. An electrode 6 is formed on the inner side face of each groove 2 on one side. Each groove 2 is formed in the direction in disagreement with the direction on the first main surface 24a. This raises mechanical strength of the solar cell 1. The direction of formation of the grooves 2 preferably crosses the direction nearest to the direction of formation at an angle of 4°˜45° on the acute angle side.
摘要翻译： 太阳能电池1具有在硅单晶衬底的第一主表面24a上彼此平行形成的多个沟槽2。 电极6一侧形成在各槽2的内侧面上。 每个槽2在与第一主表面24a上的<110>方向不一致的方向上形成。 这提高了太阳能电池1的机械强度。 凹槽2的形成方向优选在锐角侧以4°〜45°的角度最接近形成方向的110°方向。
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公开(公告)号：US20070166571A1
公开(公告)日：2007-07-19
申请号：US11649792
申请日：2007-01-05
CPC分类号： G11B5/714 , G11B5/70 , G11B5/7305
摘要： An aspect of the present invention provides a magnetic recording medium comprising following layers in this order on at least one surface of a nonmagnetic support: a nonmagnetic layer including a nonmagnetic powder and a binder; and a magnetic layer including a magnetic powder and a binder, wherein the nonmagnetic support has an enthalpy relaxation (ΔH) equal to or more than 0.5 J/g and equal to or less than 2.0 J/g. According to the aspect of the present invention, a magnetic recording medium is provided that is superior in electromagnetic conversion (e.g., with a high S/N ratio for surface recording density) and running durability (e.g., with a small number of dropouts and a low error rate).
摘要翻译： 本发明的一个方面提供一种在非磁性载体的至少一个表面上依次包含以下层的磁记录介质：包括非磁性粉末和粘合剂的非磁性层; 以及包含磁性粉末和粘合剂的磁性层，其中所述非磁性载体具有等于或大于0.5J / g且等于或小于2.0J / g的焓弛豫（DeltaH）。 根据本发明的一个方面，提供了一种电磁转换（例如，用于表面记录密度的高S / N比）和运行耐久性优异的磁记录介质（例如，具有少数辍学和 低错误率）。
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公开(公告)号：US07198817B2
公开(公告)日：2007-04-03
申请号：US10714839
申请日：2003-11-18
IPC分类号： B05D5/12
CPC分类号： G11B5/8404 , G11B5/70678 , G11B5/738
摘要： A process for producing a magnetic recording medium having at least one magnetic layer formed above a support is provided. The process includes a step of providing, on at least one side of the support, a smoothing coating layer having a thickness of 0.10 to 1 μm, a surface roughness of at most 5 nm, a number of projections having a height of 20 nm or higher measured by atomic force microscopy (AFM) of at most 20 projections/900 μm2, and an amount of residual solvent of less than 10 mg/m2, and a step of forming at least one magnetic layer on or above the smoothing coating layer without winding up.
摘要翻译： 提供了一种制造具有形成在支撑体上方的至少一个磁性层的磁记录介质的方法。 该方法包括在载体的至少一侧上提供具有0.10至1μm厚度的平滑涂层，至多5nm的表面粗糙度，高度为20nm的多个突起或 通过原子力显微镜（AFM）测量的最多20个突起/900μm2的残留溶剂的量和小于10mg / m 2的残留溶剂的量，以及 在平滑涂层上或上方形成至少一层磁性层而不卷绕的步骤。
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