摘要:
There is provided an illumination system. The illumination system includes a source of light having a wavelength of less than or equal to about 193 nm, a first facet, a second facet, and a reflective element. The light is incident on the first facet via a first path, propagates from the first facet to the second facet via a second path, and propagates from the second facet to the reflective element via a third path. The second path and the third path are in substantially opposite directions from one another and substantially parallel to each other.
摘要:
There is provided a projection exposure apparatus for microlithography using a wavelength less than or equal to 193 nm. The apparatus includes an optical element with a pupil raster element, and a projection objective with a real entrance pupil. The optical element is situated in or near a plane defined by the real entrance pupil.
摘要:
The invention relates to an optical device that includes (a) a first optical element with at least one first raster element, where the first raster element has a first axis, (b) a second optical element with at least one second raster element, where the second raster element has a second axis. The first raster element can be changed in its position relative to the second raster element, so that a distance between the first axis and the second axis is variable.
摘要:
An Illumination system for a microlithographic projection exposure apparatus has a light source and a first optical raster element that is positioned in or in close proximity to a first plane. The first plane is conjugated to a pupil plane of the illumination system by Fourier transformation. A second optical raster element is positioned in or in close proximity to the pupil plane. A third optical raster element is positioned in or in close proximity to a second plane that is also conjugated to the pupil plane by Fourier transformation. The third optical raster element, which can be a diffractive optical element, introduces an additional degree of design freedom for the modification of the angular distribution of the projection light bundle.
摘要:
There is provided a collector for guiding light with a wavelength of ≦193 nm onto a plane. The collector includes a first mirror shell for receiving a first ring aperture section of the light and irradiating a first planar ring section of the plane with a first irradiance, and a second mirror shell for receiving a second ring aperture section of the light and irradiating a second planar ring section of the plane with a second irradiance. The first and second mirror shells are rotationally symmetrical and concentrically arranged around a common axis of rotation, the first and second ring aperture sections do not overlap with one another, the first planar ring section substantially abuts the second planar ring section, and the first irradiance is approximately equal to the second irradiance.
摘要:
There is provided an illumination system for wavelengths of ≦193 nm. The illumination system includes an object plane, a plane conjugated to the object plane, a first collector between the object plane and the conjugated plane, and a second collector after the conjugated plane. The first collector focuses a beam bundle of rays from the object plane in the conjugated plane. At least one of the first and second collectors includes a mirror shell. The rays strike the mirror shell at an angle of incidence of less than 20° relative to a surface tangent of the mirror shell.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
An illumination system of a microlithographic exposure apparatus has an optical axis and a beam transforming device. This device includes a first mirror with a first reflective surface having a shape that is defined by rotating a straight line, which is inclined with respect to the optical axis, around the optical axis. The device further includes a second mirror with a second reflective surface having a shape that is defined by rotating a curved line around the optical axis. At least one of the mirrors has a central aperture containing the optical axis. This device may form a zoom-collimator for an EUV illumination system that transforms a diverging light bundle into a collimated light bundle of variable shape and/or diameter.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
There is provided an illumination system. The illumination system includes a source for light having a wavelength ≦193 nm, a field plane, and a collector having a mirror shell for receiving a part of the light. The mirror shell is arranged so that a real image of the source is formed and comes to lie in a plane that is defocused relative to the field plane by more than 30 mm, so that the field plane is illuminated in a predetermined region, substantially homogeneously.