Method for management a multimedia data of mobile communication terminal and mobile communication terminal therefor
    51.
    发明授权
    Method for management a multimedia data of mobile communication terminal and mobile communication terminal therefor 有权
    用于管理移动通信终端和移动通信终端的多媒体数据的方法

    公开(公告)号:US08290477B2

    公开(公告)日:2012-10-16

    申请号:US12580705

    申请日:2009-10-16

    IPC分类号: H04M1/725

    CPC分类号: H04M1/72547 H04L51/063

    摘要: A method is provided for managing multimedia data in a mobile communication terminal. The method includes sending a multimedia message upon a request for sending a multimedia message; deleting multimedia data attached to the multimedia message, and reconfiguring a multimedia message that includes information about a path where the attached multimedia data is stored; and storing the reconfigured multimedia message in a Sent box.

    摘要翻译: 提供了一种用于管理移动通信终端中的多媒体数据的方法。 该方法包括在发送多媒体消息的请求时发送多媒体消息; 删除附加到所述多媒体消息的多媒体数据,以及重新配置包括关于存储所附加的多媒体数据的路径的信息的多媒体消息; 并将重新配置的多媒体消息存储在“已发送”框中。

    Semiconductor device and method of fabricating the same
    52.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08148193B2

    公开(公告)日:2012-04-03

    申请号:US13236941

    申请日:2011-09-20

    IPC分类号: H01L21/00

    摘要: A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an opening formed on the exposed active region and a contact hole spaced apart from the opening to expose the conductive pattern, a semiconductor pattern and a heater electrode pattern electrically connected to the exposed active region and provided in the opening, a contact plug connected to the exposed conductive pattern and provided to fill the contact hole, and a phase change material layer provided on the heater electrode pattern.

    摘要翻译: 诸如相变存储器件的半导体器件包括:半导体衬底,包括有源区,布置成暴露有源区的导电图案;设置在导电图案上的层间电介质图案,并且包括形成在暴露的有源区上的开口;以及 接触孔与开口间隔开以暴露导电图案,半导体图案和电连接到暴露的有源区并且设置在开口中的加热器电极图案,连接到暴露的导电图案并被提供以填充接触孔的接触插塞 以及设置在加热器电极图案上的相变材料层。

    Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby
    53.
    发明授权
    Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby 有权
    形成其中具有垂直半导体互连和二极管的集成电路器件的方法及由此形成的器件

    公开(公告)号:US08119503B2

    公开(公告)日:2012-02-21

    申请号:US12498528

    申请日:2009-07-07

    IPC分类号: H01L47/00 H01L21/20

    摘要: Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening therein that exposes a first portion of the etch stop layer. This first portion of the etch stop layer is then removed to thereby expose an underlying portion of the surface of the semiconductor substrate. This removal of the etch stop layer may be performed by wet etching the first portion of the etch stop layer using a phosphoric acid solution. A semiconductor region is then selectively grown into the opening, using the exposed portion of the surface of the semiconductor substrate as an epitaxial seed layer.

    摘要翻译: 形成集成电路器件的方法包括在半导体衬底的表面上形成蚀刻停止层,并在蚀刻停止层上形成第一层间绝缘层。 图案化第一层间绝缘层以限定其中暴露出蚀刻停止层的第一部分的开口。 然后去除蚀刻停止层的第一部分,从而暴露半导体衬底的表面的下面部分。 蚀刻停止层的这种去除可以通过使用磷酸溶液湿蚀刻蚀刻停止层的第一部分来进行。 然后使用半导体衬底的表面的暴露部分作为外延种子层,选择性地将半导体区域生长到开口中。

    Voltage-controlled oscillator, phase-locked loop (PLL) circuit, and clock generator
    54.
    发明授权
    Voltage-controlled oscillator, phase-locked loop (PLL) circuit, and clock generator 有权
    压控振荡器,锁相环(PLL)电路和时钟发生器

    公开(公告)号:US08031027B2

    公开(公告)日:2011-10-04

    申请号:US12479132

    申请日:2009-06-05

    IPC分类号: H03L1/00 H03L7/085 H03K3/03

    摘要: A voltage-controlled oscillator includes a voltage regulator, and a delay unit. The voltage regulator independently receives a first oscillation control signal and a second oscillation control signal to provide a regulated voltage signal which is represented by a regular ratio of combination of the first and second oscillation control signals, and the regulated voltage signal is feedback to the voltage regulator. The delay unit generates an output signal having a frequency varying in response to the regulated voltage signal.

    摘要翻译: 压控振荡器包括电压调节器和延迟单元。 电压调节器独立地接收第一振荡控制信号和第二振荡控制信号,以提供由第一和第二振荡控制信号的组合的规则比率表示的调节电压信号,并且调节电压信号被反馈到电压 调节器 延迟单元产生响应于调节电压信号而变化的频率的输出信号。

    Method of fabricating nonvolatile memory device
    55.
    发明授权
    Method of fabricating nonvolatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号:US08030129B2

    公开(公告)日:2011-10-04

    申请号:US12655047

    申请日:2009-12-21

    IPC分类号: H01L21/06

    CPC分类号: H01L27/24

    摘要: A method of manufacturing a nonvolatile memory device including forming on a lower insulating layer a first sacrificial pattern having first openings extending in a first direction, forming a second sacrificial pattern having second openings extending in a second direction on the lower insulating layer and the first sacrificial pattern wherein the second openings intersect the first openings, etching the lower insulating layer using the first and second sacrificial patterns to form a lower insulating pattern having contact holes defined by a region where the first and second openings intersect each other, forming a bottom electrode in the contact holes, and forming a variable resistance pattern on the lower insulating pattern so that a portion of the variable resistance pattern connects to a top surface of the bottom electrode.

    摘要翻译: 一种制造非易失性存储器件的方法,包括在下绝缘层上形成第一牺牲图案,所述第一牺牲图案具有沿第一方向延伸的第一开口,形成第二牺牲图案,所述第二牺牲图案具有在所述下绝缘层上沿第二方向延伸的第二开口, 图案,其中所述第二开口与所述第一开口相交;使用所述第一和第二牺牲图案蚀刻所述下绝缘层,以形成具有由所述第一开口和所述第二开口相交的区域限定的接触孔的下绝缘图案,形成底部电极 接触孔,并且在下绝缘图案上形成可变电阻图案,使得可变电阻图案的一部分连接到底电极的顶表面。

    Apparatus and method for providing broadcast parameter message in a mobile communication system
    56.
    发明授权
    Apparatus and method for providing broadcast parameter message in a mobile communication system 有权
    一种用于在移动通信系统中提供广播参数消息的装置和方法

    公开(公告)号:US07801103B2

    公开(公告)日:2010-09-21

    申请号:US11346186

    申请日:2006-02-03

    IPC分类号: H04J3/00

    摘要: A method and apparatus provide a broadcast parameter message in a mobile communication system providing a broadcast service. If the provided broadcast service is time domain multiplex (TDM)-multiplexed, a message generator generates the broadcast parameter message by setting a field indicating the TDM multiplexing, setting a field indicating a position of the broadcast service in each sub-buffer, setting a field indicating whether one sub-buffer includes one service and a field indicating validity of the field, and setting a field exclusively indicating actual broadcast service data stored in one sub-buffer. A transmitter modulates the broadcast parameter message and provides the modulated broadcast parameter message to a terminal that receives the broadcast service.

    摘要翻译: 一种方法和装置在提供广播服务的移动通信系统中提供广播参数消息。 如果提供的广播服务是多路复用(TDM)的,则消息发生器通过设置表示TDM复用的字段来生成广播参数消息,设置表示广播服务在每个子缓冲器中的位置的字段,设置 指示一个子缓冲器是否包括一个服务和指示该字段的有效性的字段,以及专门指定存储在一个子缓冲器中的实际广播服务数据的字段。 发射机调制广播参数消息,并向接收广播业务的终端提供经调制的广播参数消息。

    Method for transmitting image data in real-time
    57.
    发明授权
    Method for transmitting image data in real-time 有权
    实时传输图像数据的方法

    公开(公告)号:US07774505B2

    公开(公告)日:2010-08-10

    申请号:US11368757

    申请日:2006-03-06

    IPC分类号: H04J3/24 G06F15/16

    摘要: Disclosed is a method for transmitting image data in real-time between mobile communication terminals in a mobile communication system, the mobile communication system including a host mobile communication terminal, at least one client mobile communication terminal, an SMS server, and a PDSN assigning IP addresses. The method includes when an IP address is received from the PDSN, transmitting by the host mobile communication terminal an invite message to the client mobile communication terminal via the SMS server; receiving by the client mobile communication terminal an IP address from the PDSN, and transmitting a register message to the host mobile communication terminal via the PDSN; updating by the host mobile communication terminal a buddy list, and transmitting the updated buddy list to the client mobile communication terminal via the PDSN; and exchanging by the host and the client mobile communication terminals the image data in real-time based on the updated buddy list.

    摘要翻译: 公开了一种在移动通信系统中的移动通信终端之间实时发送图像数据的方法,该移动通信系统包括主机移动通信终端,至少一个客户端移动通信终端,SMS服务器和分配IP的PDSN 地址 该方法包括当从PDSN接收到IP地址时,由主机移动通信终端经由SMS服务器向客户移动通信终端发送邀请消息; 由客户端移动通信终端从PDSN接收IP地址,经由PDSN向主机移动通信终端发送注册消息; 通过主机移动通信终端更新好友列表,并且经由PDSN将更新的好友列表发送给客户移动通信终端; 并由主机和客户端移动通信终端根据更新的好友列表实时交换图像数据。

    Methods of Forming Integrated Circuit Devices Having Vertical Semiconductor Interconnects and Diodes Therein and Devices Formed Thereby
    58.
    发明申请
    Methods of Forming Integrated Circuit Devices Having Vertical Semiconductor Interconnects and Diodes Therein and Devices Formed Thereby 有权
    形成具有垂直半导体互连和二极管的集成电路器件的方法和由此形成的器件

    公开(公告)号:US20100108971A1

    公开(公告)日:2010-05-06

    申请号:US12498528

    申请日:2009-07-07

    IPC分类号: H01L47/00 H01L21/20

    摘要: Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening therein that exposes a first portion of the etch stop layer. This first portion of the etch stop layer is then removed to thereby expose an underlying portion of the surface of the semiconductor substrate. This removal of the etch stop layer may be performed by wet etching the first portion of the etch stop layer using a phosphoric acid solution. A semiconductor region is then selectively grown into the opening, using the exposed portion of the surface of the semiconductor substrate as an epitaxial seed layer.

    摘要翻译: 形成集成电路器件的方法包括在半导体衬底的表面上形成蚀刻停止层,并在蚀刻停止层上形成第一层间绝缘层。 图案化第一层间绝缘层以限定其中暴露出蚀刻停止层的第一部分的开口。 然后去除蚀刻停止层的第一部分,从而暴露半导体衬底的表面的下面部分。 蚀刻停止层的这种去除可以通过使用磷酸溶液湿蚀刻蚀刻停止层的第一部分来进行。 然后使用半导体衬底的表面的暴露部分作为外延种子层,选择性地将半导体区域生长到开口中。

    Play-out apparatus and method for switching a channel in a digital multimedia broadcasting receiver
    59.
    发明授权
    Play-out apparatus and method for switching a channel in a digital multimedia broadcasting receiver 有权
    用于在数字多媒体广播接收机中切换频道的播放装置和方法

    公开(公告)号:US07711011B2

    公开(公告)日:2010-05-04

    申请号:US11474557

    申请日:2006-06-26

    IPC分类号: H04J3/04

    摘要: A play-out apparatus and method for switching a channel in a digital multimedia broadcasting receiver are provided which can decrease a delay occurring in a channel switching time. A demultiplexer demultiplexes a signal received from a transmitter and outputs video data. A time stamp adapter changes a time stamp for indicating a play-out time of the video data such that the video data can be immediately output from a playback buffer without a Coder-Decoder (CODEC) delay, and outputs the video data including the changed time stamp. The playback buffer buffers and outputs the video data output from the time stamp adapter according to the changed time stamp. A video decoder decodes and outputs the video data output from the playback buffer according to the changed time stamp. A display unit plays the decoded video data out.

    摘要翻译: 提供一种用于切换数字多媒体广播接收机中的频道的播放装置和方法,其可以减少在频道切换时间中发生的延迟。 解复用器对从发射机接收的信号进行解复用,并输出视频数据。 时间戳适配器改变用于指示视频数据的播放时间的时间戳,使得视频数据可以立即从没有编码器 - 解码器(CODEC)延迟的重放缓冲器输出,并且输出包括改变的视频数据的视频数据 时间戳 回放缓冲器根据改变的时间戳缓冲并输出从时间戳适配器输出的视频数据。 视频解码器根据改变的时间戳解码并输出从重放缓冲器输出的视频数据。 显示单元播放经解码的视频数据。

    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    60.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20100051952A1

    公开(公告)日:2010-03-04

    申请号:US12496298

    申请日:2009-07-01

    CPC分类号: H01L27/1214 H01L27/1288

    摘要: A thin film transistor substrate capable of appropriately maintaining driving performance even when there is a difference between manufacturing processes and a method of manufacturing the same. The thin film transistor substrate includes: a gate electrode formed on an insulating substrate; a semiconductor layer formed on the gate electrode; and a plurality of thin film transistors each having a source electrode and a drain electrode that are formed on the gate electrode and the semiconductor layer so as to be spaced apart from each other. At least one of the plurality of thin film transistors is a dummy thin film transistor that does not have the semiconductor layer between the source electrode and the drain electrode.

    摘要翻译: 即使在制造过程之间存在差异的情况下也能够适当地保持驱动性能的薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括:形成在绝缘基板上的栅电极; 形成在栅电极上的半导体层; 以及多个薄膜晶体管,每个薄膜晶体管具有形成在栅电极和半导体层上以彼此间隔开的源电极和漏电极。 多个薄膜晶体管中的至少一个是在源极和漏极之间不具有半导体层的虚设薄膜晶体管。