公开(公告)号：US08119503B2

公开(公告)日：2012-02-21

申请号：US12498528

申请日：2009-07-07

申请人： Kong-Soo Lee ,  Kyoung-Seok Kim ,  Sang-Jin Park ,  Chang-Hoon Lee ,  Ji-Hyun Jeong ,  Jae-Hyun Park ,  Jae-Hee Oh

发明人： Kong-Soo Lee ,  Kyoung-Seok Kim ,  Sang-Jin Park ,  Chang-Hoon Lee ,  Ji-Hyun Jeong ,  Jae-Hyun Park ,  Jae-Hee Oh

IPC分类号： H01L47/00 ,  H01L21/20

CPC分类号： H01L27/1021 ,  H01L27/24 ,  H01L29/8613

摘要： Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening therein that exposes a first portion of the etch stop layer. This first portion of the etch stop layer is then removed to thereby expose an underlying portion of the surface of the semiconductor substrate. This removal of the etch stop layer may be performed by wet etching the first portion of the etch stop layer using a phosphoric acid solution. A semiconductor region is then selectively grown into the opening, using the exposed portion of the surface of the semiconductor substrate as an epitaxial seed layer.

摘要翻译： 形成集成电路器件的方法包括在半导体衬底的表面上形成蚀刻停止层，并在蚀刻停止层上形成第一层间绝缘层。 图案化第一层间绝缘层以限定其中暴露出蚀刻停止层的第一部分的开口。 然后去除蚀刻停止层的第一部分，从而暴露半导体衬底的表面的下面部分。 蚀刻停止层的这种去除可以通过使用磷酸溶液湿蚀刻蚀刻停止层的第一部分来进行。 然后使用半导体衬底的表面的暴露部分作为外延种子层，选择性地将半导体区域生长到开口中。

公开(公告)号：US20100108971A1

公开(公告)日：2010-05-06

申请号：US12498528

申请日：2009-07-07

申请人： Kong-Soo Lee ,  Kyoung-Seok Kim ,  Sang-Jin Park ,  Chang-Hoon Lee ,  Ji-Hyun Jeong ,  Jae-Hyun Park ,  Jae-Hee Oh

发明人： Kong-Soo Lee ,  Kyoung-Seok Kim ,  Sang-Jin Park ,  Chang-Hoon Lee ,  Ji-Hyun Jeong ,  Jae-Hyun Park ,  Jae-Hee Oh

IPC分类号： H01L47/00 ,  H01L21/20

CPC分类号： H01L27/1021 ,  H01L27/24 ,  H01L29/8613

摘要： Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening therein that exposes a first portion of the etch stop layer. This first portion of the etch stop layer is then removed to thereby expose an underlying portion of the surface of the semiconductor substrate. This removal of the etch stop layer may be performed by wet etching the first portion of the etch stop layer using a phosphoric acid solution. A semiconductor region is then selectively grown into the opening, using the exposed portion of the surface of the semiconductor substrate as an epitaxial seed layer.

摘要翻译： 形成集成电路器件的方法包括在半导体衬底的表面上形成蚀刻停止层，并在蚀刻停止层上形成第一层间绝缘层。 图案化第一层间绝缘层以限定其中暴露出蚀刻停止层的第一部分的开口。 然后去除蚀刻停止层的第一部分，从而暴露半导体衬底的表面的下面部分。 蚀刻停止层的这种去除可以通过使用磷酸溶液湿蚀刻蚀刻停止层的第一部分来进行。 然后使用半导体衬底的表面的暴露部分作为外延种子层，选择性地将半导体区域生长到开口中。

公开(公告)号：US07598141B2

公开(公告)日：2009-10-06

申请号：US11261266

申请日：2005-10-28

申请人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

发明人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/11 ,  H01L27/1104

摘要： A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

摘要翻译： 一种制造静态随机存取存储器件的方法包括：使用选择性外延生长选择性地去除绝缘膜并生长单晶硅层，单晶硅层在除去绝缘膜的部分中生长; 使绝缘膜凹陷; 以及在所述单晶硅层和所述绝缘膜上沉积非晶硅层，使得所述非晶硅层部分地包围所述单晶硅层的顶表面和侧表面。

公开(公告)号：US20060270215A1

公开(公告)日：2006-11-30

申请号：US11437625

申请日：2006-05-22

申请人： Kong-Soo Lee ,  Chang-Hoon Lee ,  Young-Sub You ,  Jung-Hwan Oh ,  Sang-Jin Park

发明人： Kong-Soo Lee ,  Chang-Hoon Lee ,  Young-Sub You ,  Jung-Hwan Oh ,  Sang-Jin Park

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/28525 ,  H01L21/28531 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1108

摘要： A semiconductor device and a method of manufacturing the semiconductor device may include a layered structure and a plug. The layered structure may have a lower insulation layer pattern, a single crystalline silicon pattern, and an upper insulation layer pattern provided on a substrate. A contact hole may be provided in the layered structure. The contact hole may expose the single crystalline silicon pattern and the substrate. The plug may include silicon germanium. The plug may be provided in the contact hole and may be electrically connected to the substrate and the single crystalline silicon pattern.

摘要翻译： 半导体器件和半导体器件的制造方法可以包括分层结构和插头。 层状结构可以具有较低的绝缘层图案，单晶硅图案和设置在基底上的上部绝缘层图案。 可以在层状结构中设置接触孔。 接触孔可以暴露单晶硅图案和衬底。 插头可以包括硅锗。 插头可以设置在接触孔中，并且可以电连接到衬底和单晶硅图案。

公开(公告)号：US20060108575A1

公开(公告)日：2006-05-25

申请号：US11261266

申请日：2005-10-28

申请人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

发明人： Chang-Hoon Lee ,  Sang-Jin Park ,  Won-Seok Yoo ,  Kong-Soo Lee

IPC分类号： H01L29/08

CPC分类号： H01L27/11 ,  H01L27/1104

摘要： A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

公开(公告)号：US20070059889A1

公开(公告)日：2007-03-15

申请号：US11531239

申请日：2006-09-12

申请人： Dae-Han Yoo ,  Kong-Soo Lee ,  Chang-Hoon Lee ,  Yong-Woo Hyung ,  Hyeon-Deok Lee ,  Hyo-Jung KIM ,  Jung-Hwan OH ,  Young-Sub You

发明人： Dae-Han Yoo ,  Kong-Soo Lee ,  Chang-Hoon Lee ,  Yong-Woo Hyung ,  Hyeon-Deok Lee ,  Hyo-Jung KIM ,  Jung-Hwan OH ,  Young-Sub You

IPC分类号： H01L21/336

CPC分类号： H01L27/10894 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66621

摘要： A recessed gate electrode structure includes a first recess and a second recess in communication with the first recess both formed in a substrate. The second recess is larger than the first recess. A gate dielectric layer is formed on a top surface of the substrate and on an inner surface of the first and second recesses. A first polysilicon layer fills the first recess and is doped with impurities at a first impurity density. A second polysilicon layer fills the second recess and is doped with the impurities at a second impurity density. A void is defined within the second polysilicon layer. A third polysilicon layer is formed on the gate dielectric and first polysilicon layers and is doped with the impurities at a third impurity density. Due to the presence of impurities in the second polysilicon layer, migration of the void within the second recess may be substantially prevented.

摘要翻译： 凹陷栅极电极结构包括第一凹部和与形成在基板中的第一凹部连通的第二凹部。 第二凹部比第一凹部大。 栅极电介质层形成在基板的顶表面上和第一凹槽和第二凹槽的内表面上。 第一多晶硅层填充第一凹槽并以第一杂质密度掺杂杂质。 第二多晶硅层填充第二凹槽，并以第二杂质密度掺杂杂质。 在第二多晶硅层内限定空隙。 在栅极电介质和第一多晶硅层上形成第三多晶硅层，并以第三杂质密度掺杂杂质。 由于在第二多晶硅层中存在杂质，可以基本上防止第二凹陷内的空隙的迁移。

公开(公告)号：US07563677B2

公开(公告)日：2009-07-21

申请号：US11531239

申请日：2006-09-12

申请人： Dae-Han Yoo ,  Kong-Soo Lee ,  Chang-Hoon Lee ,  Yong-Woo Hyung ,  Hyeon-Deok Lee ,  Hyo-Jung Kim ,  Jung-Hwan Oh ,  Young-Sub You

发明人： Dae-Han Yoo ,  Kong-Soo Lee ,  Chang-Hoon Lee ,  Yong-Woo Hyung ,  Hyeon-Deok Lee ,  Hyo-Jung Kim ,  Jung-Hwan Oh ,  Young-Sub You

IPC分类号： H01L21/336

CPC分类号： H01L27/10894 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66621

摘要： A recessed gate electrode structure includes a first recess and a second recess in communication with the first recess both formed in a substrate. The second recess is larger than the first recess. A gate dielectric layer is formed on a top surface of the substrate and on an inner surface of the first and second recesses. A first polysilicon layer fills the first recess and is doped with impurities at a first impurity density. A second polysilicon layer fills the second recess and is doped with the impurities at a second impurity density. A void is defined within the second polysilicon layer. A third polysilicon layer is formed on the gate dielectric and first polysilicon layers and is doped with the impurities at a third impurity density. Due to impurities in the second polysilicon layer, migration of the void within the second recess may be substantially prevented.

摘要翻译： 凹陷栅极电极结构包括第一凹部和与形成在基板中的第一凹部连通的第二凹部。 第二凹部比第一凹部大。 栅极电介质层形成在基板的顶表面上和第一凹槽和第二凹槽的内表面上。 第一多晶硅层填充第一凹槽并以第一杂质密度掺杂杂质。 第二多晶硅层填充第二凹槽，并以第二杂质密度掺杂杂质。 在第二多晶硅层内限定空隙。 在栅极电介质和第一多晶硅层上形成第三多晶硅层，并以第三杂质密度掺杂杂质。 由于第二多晶硅层中的杂质，可以基本上防止第二凹陷内的空隙的迁移。

公开(公告)号：US07774505B2

公开(公告)日：2010-08-10

申请号：US11368757

申请日：2006-03-06

申请人： Tae-Young Kang ,  Woo-Hyuk Choi ,  Noh-Kyung Hong ,  Chang-Hoon Lee ,  Byeong-Cheol Hwang ,  Jae-Hyun Park ,  Bong-Hee Kim

发明人： Tae-Young Kang ,  Woo-Hyuk Choi ,  Noh-Kyung Hong ,  Chang-Hoon Lee ,  Byeong-Cheol Hwang ,  Jae-Hyun Park ,  Bong-Hee Kim

IPC分类号： H04J3/24 ,  G06F15/16

CPC分类号： H04L67/24 ,  H04L29/12009 ,  H04L29/12216 ,  H04L61/00 ,  H04L61/2007 ,  H04L67/38 ,  H04W8/26 ,  H04W60/00 ,  H04W80/00 ,  H04W88/184

摘要： Disclosed is a method for transmitting image data in real-time between mobile communication terminals in a mobile communication system, the mobile communication system including a host mobile communication terminal, at least one client mobile communication terminal, an SMS server, and a PDSN assigning IP addresses. The method includes when an IP address is received from the PDSN, transmitting by the host mobile communication terminal an invite message to the client mobile communication terminal via the SMS server; receiving by the client mobile communication terminal an IP address from the PDSN, and transmitting a register message to the host mobile communication terminal via the PDSN; updating by the host mobile communication terminal a buddy list, and transmitting the updated buddy list to the client mobile communication terminal via the PDSN; and exchanging by the host and the client mobile communication terminals the image data in real-time based on the updated buddy list.

摘要翻译： 公开了一种在移动通信系统中的移动通信终端之间实时发送图像数据的方法，该移动通信系统包括主机移动通信终端，至少一个客户端移动通信终端，SMS服务器和分配IP的PDSN 地址 该方法包括当从PDSN接收到IP地址时，由主机移动通信终端经由SMS服务器向客户移动通信终端发送邀请消息; 由客户端移动通信终端从PDSN接收IP地址，经由PDSN向主机移动通信终端发送注册消息; 通过主机移动通信终端更新好友列表，并且经由PDSN将更新的好友列表发送给客户移动通信终端; 并由主机和客户端移动通信终端根据更新的好友列表实时交换图像数据。

公开(公告)号：US20060209802A1

公开(公告)日：2006-09-21

申请号：US11368757

申请日：2006-03-06

申请人： Tae-Young Kang ,  Woo-Hyuk Choi ,  Noh-Kyung Hong ,  Chang-Hoon Lee ,  Byeong-Cheol Hwang ,  Jae-Hyun Park ,  Bong-Hee Kim

发明人： Tae-Young Kang ,  Woo-Hyuk Choi ,  Noh-Kyung Hong ,  Chang-Hoon Lee ,  Byeong-Cheol Hwang ,  Jae-Hyun Park ,  Bong-Hee Kim

IPC分类号： H04L12/66

CPC分类号： H04L67/24 ,  H04L29/12009 ,  H04L29/12216 ,  H04L61/00 ,  H04L61/2007 ,  H04L67/38 ,  H04W8/26 ,  H04W60/00 ,  H04W80/00 ,  H04W88/184

摘要： Disclosed is a method for transmitting image data in real-time between mobile communication terminals in a mobile communication system, the mobile communication system including a host mobile communication terminal, at least one client mobile communication terminal, an SMS server, and a PDSN assigning IP addresses. The method includes when an IP address is received from the PDSN, transmitting by the host mobile communication terminal an invite message to the client mobile communication terminal via the SMS server; receiving by the client mobile communication terminal an IP address from the PDSN, and transmitting a register message to the host mobile communication terminal via the PDSN; updating by the host mobile communication terminal a buddy list, and transmitting the updated buddy list to the client mobile communication terminal via the PDSN; and exchanging by the host and the client mobile communication terminals the image data in real-time based on the updated buddy list.

摘要翻译： 公开了一种在移动通信系统中的移动通信终端之间实时发送图像数据的方法，该移动通信系统包括主机移动通信终端，至少一个客户端移动通信终端，SMS服务器和分配IP的PDSN 地址 该方法包括当从PDSN接收到IP地址时，由主机移动通信终端经由SMS服务器向客户移动通信终端发送邀请消息; 由客户端移动通信终端从PDSN接收IP地址，经由PDSN向主机移动通信终端发送注册消息; 通过主机移动通信终端更新好友列表，并且经由PDSN将更新的好友列表发送给客户移动通信终端; 并由主机和客户端移动通信终端根据更新的好友列表实时交换图像数据。

公开(公告)号：US20160035617A1

公开(公告)日：2016-02-04

申请号：US14810621

申请日：2015-07-28

申请人： Jong-Su Kim ,  Dong-Woon Park ,  Tae-Hoi Park ,  Yong-Kug Bae ,  Tae-Hwan Oh ,  Chang-Hoon Lee ,  Boo-Hyun Ham

发明人： Jong-Su Kim ,  Dong-Woon Park ,  Tae-Hoi Park ,  Yong-Kug Bae ,  Tae-Hwan Oh ,  Chang-Hoon Lee ,  Boo-Hyun Ham

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/3213

CPC分类号： H01L21/76816 ,  G03F7/70633 ,  G03F7/70683 ,  H01L21/28518 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76897 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/0207

摘要： In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.

摘要翻译： 在制造半导体器件的方法中，提供了包括电路区域和覆盖标记区域的衬底。 在电路区域中的基板上形成导电栅极图案，使得覆盖标记区域没有栅极图案，并且在基板上在电路区域中的栅极图案之间形成导电接触图案。 在覆盖标记区域中的基板上形成反射镜图案，其中反射镜图案和接触图案包括相同的反射材料。 还讨论了相关半导体器件，覆盖标记和制造方法。