公开(公告)号：US20070166029A1

公开(公告)日：2007-07-19

申请号：US11653297

申请日：2007-01-16

申请人： Hsiao-Wen Lee ,  Tzu-Han Lin ,  Pai-Chun Peter Zung ,  Chien-Pang Lin

发明人： Hsiao-Wen Lee ,  Tzu-Han Lin ,  Pai-Chun Peter Zung ,  Chien-Pang Lin

IPC分类号： G03B17/00

CPC分类号： H04N5/2254 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/1469 ,  H01L2924/16195 ,  H04N5/2257

摘要： An image sensor module comprises an image sensor chip, at least one lens layer, and at least one bonding layer. The image sensor chip has an image capturing zone manufactured with an image capturing element, and a partition zone surrounding the image capturing zone. The at least one lens layer is stacked on the image sensor chip, having a transparent substrate and a lens mounted on the transparent substrate and adapted to focus the projected image onto the image capturing zone of the image sensor chip. The at least one bonding layer is arranged corresponding to the partition zone of the image sensor chip and bonded between the image sensor chip and the at least one lens layer, mixing of a glue agent and a plurality of spacer elements with which the height of each the spacer elements is determined to be the height of the bonding layer.

摘要翻译： 图像传感器模块包括图像传感器芯片，至少一个透镜层和至少一个结合层。 图像传感器芯片具有由图像捕获元件制造的图像捕获区域和围绕图像捕获区域的分隔区域。 至少一个透镜层堆叠在图像传感器芯片上，具有透明基板和安装在透明基板上的透镜，并且适于将投影图像聚焦到图像传感器芯片的图像捕获区域上。 所述至少一个接合层被布置成对应于图像传感器芯片的分隔区并且结合在图像传感器芯片和至少一个透镜层之间，胶粘剂与多个间隔元件的混合，每个 间隔元件被确定为接合层的高度。

公开(公告)号：US07122458B2

公开(公告)日：2006-10-17

申请号：US10896831

申请日：2004-07-22

申请人： Chia-Jen Cheng ,  Hui-Mei Yu ,  Li-Hsin Tseng ,  Tzu-Han Lin ,  Ching-Chiang Wu ,  Chun-Yen Lo ,  Li-Chuan Huang ,  Boe Su

发明人： Chia-Jen Cheng ,  Hui-Mei Yu ,  Li-Hsin Tseng ,  Tzu-Han Lin ,  Ching-Chiang Wu ,  Chun-Yen Lo ,  Li-Chuan Huang ,  Boe Su

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/00014

摘要： A method for fabricating a pad redistribution layer. First, at least one bonding pad exposed by a first passivation layer is provided. A diffusion barrier layer and a seed layer are then formed over the first passivation layer and the bonding pad. A patterned mask layer is then formed over the seed layer to expose a portion thereof over the bonding pad, and a metal layer is then formed thereon. A sacrificial layer is then formed over the substrate and the sacrificial layer over the patterned mask layer is removed. The conductive film exposed by the metal layer and the remaining sacrificial layer is then removed, leaving a pad redistribution layer for the bonding pad.

摘要翻译： 一种制造衬垫再分布层的方法。 首先，提供由第一钝化层暴露的至少一个接合焊盘。 然后在第一钝化层和接合焊盘上形成扩散阻挡层和种子层。 然后在种子层上形成图案化的掩模层，以将其部分暴露在焊盘上，然后在其上形成金属层。 然后在衬底上形成牺牲层，并去除图案化掩模层上的牺牲层。 然后去除由金属层和剩余的牺牲层暴露的导电膜，留下用于焊盘的焊盘再分布层。

公开(公告)号：US20060055035A1

公开(公告)日：2006-03-16

申请号：US10938594

申请日：2004-09-13

申请人： Tzu-Han Lin ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Chun-Yen Lo ,  Li-Hsin Tseng ,  Boe Su ,  Simon Lu

发明人： Tzu-Han Lin ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Chun-Yen Lo ,  Li-Hsin Tseng ,  Boe Su ,  Simon Lu

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L2224/02125 ,  H01L2224/05001 ,  H01L2224/05007 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.

摘要翻译： 提供了用于半导体器件封装的焊接凸块结构。 在一个实施例中，焊料凸块结构包括半导体衬底，所述衬底具有至少一个接触焊盘和具有形成在其中的至少一个开口的上钝化层，其暴露接触焊盘的一部分。 在接触垫的一部分上形成至少一个图案化和蚀刻的聚合物层。 在聚合物层之上形成至少一个图案化和蚀刻的导电金属层并与其对准。 并且在导电金属层的上方设置至少一层具有焊料高度的焊料材料，该焊料层与导电金属层对准，此后焊料层被回流，从而形成焊球。

公开(公告)号：US20060046434A1

公开(公告)日：2006-03-02

申请号：US10926764

申请日：2004-08-26

申请人： Boe Su ,  H.M. Yu ,  Chia-Jen Cheng ,  Tzu-Han Lin ,  Kuo-Wei Lin

发明人： Boe Su ,  H.M. Yu ,  Chia-Jen Cheng ,  Tzu-Han Lin ,  Kuo-Wei Lin

IPC分类号： H01L21/78 ,  H01L21/44 ,  H01L21/302

CPC分类号： H01L21/02076 ,  H01L21/78 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13116 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2224/13099

摘要： A method for preventing lead precipitation during wafer processing is disclosed. The method includes singulating a semiconductor wafer having a plurality of solder bumps and applying cold deionized (DI) water to the semiconductor wafer during singulation. Application of the cold DI water reduces or prevents lead precipitation during the singulation process, and thereby reduces the presence of bump oxidation.

摘要翻译： 公开了一种在晶片加工过程中防止铅析出的方法。 该方法包括在分割期间单片化具有多个焊料凸块的半导体晶片并将冷去离子（DI）水施加到半导体晶片。 冷去离子水的应用减少或防止在分离过程中的铅沉淀，从而减少凸起氧化的存在。