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    Conformal etch material and process
    52.
    发明授权
    Conformal etch material and process 有权
    保形蚀刻材料和工艺

    公开(公告)号：US08349739B2

    公开(公告)日：2013-01-08

    申请号：US12546812

    申请日：2009-08-25

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/302

    CPC classification number: H01L21/31111 ,  H01L21/30604 ,  H01L21/32134

    Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

    Abstract translation: 本公开提供了蚀刻基板的方法。 该方法包括在基板上形成抗蚀剂图案; 将蚀刻化学流体施加到所述基底，其中所述蚀刻化学流体包括扩散控制材料; 去除蚀刻化学液体; 并去除抗蚀剂图案。

    Method and photoresist with zipper mechanism
    53.
    发明授权
    Method and photoresist with zipper mechanism 有权
    方法和光刻胶拉链机制

    公开(公告)号：US08323870B2

    公开(公告)日：2012-12-04

    申请号：US12916759

    申请日：2010-11-01

    Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

    Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

    IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

    Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

    Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

    Method for manufacturing a semiconductor device using a modified photosensitive layer
    54.
    发明授权
    Method for manufacturing a semiconductor device using a modified photosensitive layer 有权
    使用改性感光层制造半导体器件的方法

    公开(公告)号：US08304179B2

    公开(公告)日：2012-11-06

    申请号：US12463501

    申请日：2009-05-11

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

    Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.

    Abstract translation: 本公开提供了一种用于制造半导体器件的方法。 该方法包括在基底上涂覆光致抗蚀剂。 光致抗蚀剂暴露于辐射。 辐射曝光的光致抗蚀剂被烘烤。 辐射曝光和烘烤的光致抗蚀剂被开发以产生图像图案。 用处理材料处理图像图案。 对基板和经处理的图像图案执行离子注入工艺。 图案图案从基板剥离。 处理材料的碳原子比小于光致抗蚀剂的碳原子比。

    SYSTEM AND METHOD OF VAPOR DEPOSITION
    55.
    发明申请
    SYSTEM AND METHOD OF VAPOR DEPOSITION 审中-公开
    蒸气沉积系统与方法

    公开(公告)号：US20120090547A1

    公开(公告)日：2012-04-19

    申请号：US13337846

    申请日：2011-12-27

    Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    IPC: C23C16/46

    CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

    Abstract: Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).

    Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的系统。 该系统包括化学品供应室，可操作以分配蒸气的供应喷嘴和可操作以随着蒸汽分配而原位向基板提供热量的加热元件。 该系统可以进一步包括反应室和/或混合室。

    System and method of vapor deposition
    56.
    发明授权
    System and method of vapor deposition 有权
    气相沉积的系统和方法

    公开(公告)号：US08105954B2

    公开(公告)日：2012-01-31

    申请号：US12254658

    申请日：2008-10-20

    Applicant: Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    Inventor： Chien-Wei Wang ,  David Ding-Chung Lu ,  Ching-Yu Chang

    IPC: H01L21/47

    CPC classification number: H01L21/0273 ,  B05D1/60 ,  B05D3/02 ,  G03F7/167 ,  H01L21/0276

    Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.

    Abstract translation: 提供了一种用于将涂料气相沉积到半导体衬底上的方法和系统。 在一个实施例中，沉积光致抗蚀剂。 可以通过气相沉积来进行原位烘烤工艺。 在一个实施例中，在沉积期间改变待沉积到衬底上的材料的化学成分的比例。 因此，可以提供具有梯度化学成分分布的层。 在一个实施例中，可以提供BARC层，其包括提供通过该层的n，k分布的梯度化学分量分布。 可能蒸气沉积的其他材料包括图案冷冻材料。

    NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION
    59.
    发明申请
    NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION 有权
    新型TARC材料用于降低水分降低

    公开(公告)号：US20110262871A1

    公开(公告)日：2011-10-27

    申请号：US13177741

    申请日：2011-07-07

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/20

    CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

    Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

    Abstract translation: 本文公开了各种光刻方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

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