TARGET MATERIAL
    53.
    发明申请
    TARGET MATERIAL 审中-公开

    公开(公告)号:US20180209034A1

    公开(公告)日:2018-07-26

    申请号:US15745994

    申请日:2016-07-26

    IPC分类号: C23C14/34 C22C27/04

    摘要: Provided is a target material which suppresses contamination of a gate electrode during sputtering and which is used to form a gate electrode capable of achieving stable TFT characteristics. This target material contains a total of 50 atom % or more of one or more elements (M) selected from among the group consisting of W, Nb, Ta, Ni, Ti and Cr, with the remainder comprising Mo and unavoidable impurities, wherein a content of K, which is one of the unavoidable impurities, is preferably 0.4 to 20.0 ppm by mass and a content of W as the element (M) is preferably 10 to 50 atom %.