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    STRUCTURE CONTAINING Sn LAYER OR Sn ALLOY LAYER
    2.
    发明申请
    STRUCTURE CONTAINING Sn LAYER OR Sn ALLOY LAYER 有权

    公开(公告)号：US20230072996A1

    公开(公告)日：2023-03-09

    申请号：US17760278

    申请日：2020-02-05

    Applicant: ISHIHARA CHEMICAL CO., LTD.

    Inventor： Takahiro TANAKA ,  Hironori YAMADA ,  Daiki TAKASE ,  Masaru HATABE

    IPC: H01L23/00

    Abstract: A structure including an Sn layer or an Sn alloy layer includes a substrate, an Sn layer or Sn alloy layer formed above the substrate, and an under barrier metal formed between the substrate and the Sn layer or Sn alloy layer. The under barrier metal is an Ni alloy layer containing Ni, and at least one selected from W, Ir, Pt, Au, and Bi, and can sufficiently inhibit generation of an intermetallic compound through a reaction, caused due to metal diffusion of a metal contained in the substrate, between the metal and Sn contained in the Sn layer or Sn alloy layer.

    TA POWDER, PRODUCTION METHOD THEREFOR, AND TA GRANULATED POWDER
    4.
    发明申请
    TA POWDER, PRODUCTION METHOD THEREFOR, AND TA GRANULATED POWDER 审中-公开
    TA粉，其生产方法和TA粉碎粉

    公开(公告)号：US20160104580A1

    公开(公告)日：2016-04-14

    申请号：US14895187

    申请日：2013-06-13

    Applicant: ISHIHARA CHEMICAL CO., LTD.

    Inventor： Takayuki MAESHIMA ,  Yasunori YONEHANA ,  Hisakazu SAKAI ,  Jyun FURUTANI ,  Issei SATOH

    IPC: H01G9/042 ,  B22F1/00 ,  B22F9/22

    CPC classification number: H01G9/042 ,  B22F1/0003 ,  B22F1/0018 ,  B22F9/22 ,  B22F2201/013 ,  B22F2301/20 ,  B22F2304/10 ,  C22C1/045 ,  H01G9/0029 ,  H01G9/15

    Abstract: Method of producing Ta powder for tantalum solid electrolytic capacitor capable of stably providing CV value of more than 220 k and to provide the Ta powder and its Ta granulated powder. In method of producing Ta powder by vaporizing TaCl5 through heating and reducing with H2 gas, the reduction is performed under conditions that feeding rate of TaCl5 vapor passing through section area of reaction field of 1 cm2 for 1 minute is 0.05˜5.0 g/cm2·min and residence time of TaCl5 vapor in the reduction reaction field is 0.1˜5 seconds and reduction temperature of TaCl5 is 1100˜1600° C., whereby Ta powder including a single phase of β-Ta of tetragonal system or mixed phase of β-Ta and α-Ta of cubic system and having average particle size of 30˜150 nm is obtained. Further, Ta granulated powder is obtained by granulating the Ta powder.

    Abstract translation: 制备能够稳定提供超过220k的CV值的钽固体电解电容器的Ta粉末的方法，并提供Ta粉末及其Ta粒状粉末。 在通过用氢气加热还原的TaCl 5蒸发生产Ta粉末的方法中，在通过1cm 2的反应场的面积的TaCl 5蒸气的进料速率为0.05〜5.0g / cm 2的条件下进行还原。 min和TaCl5蒸气在还原反应场中的停留时间为0.1〜5秒，TaCl 5的还原温度为1100〜1600℃，由此，包含单相的Ta粉末和-ba的四方晶系或混合相的Ta粉末 ; - 得到平均粒径为30〜150nm的立方体系的Ta和α-Ta。 此外，通过造粒Ta粉末获得Ta造粒粉末。

    CONDUCTIVE FILM FORMING METHOD AND SINTERING PROMOTER
    5.
    发明申请
    CONDUCTIVE FILM FORMING METHOD AND SINTERING PROMOTER 有权
    导电薄膜成型方法和烧结促进剂

    公开(公告)号：US20150118413A1

    公开(公告)日：2015-04-30

    申请号：US14384003

    申请日：2013-02-28

    Applicant: ISHIHARA CHEMICAL CO., LTD.

    Inventor： Yuichi Kawato ,  Kazushige Miyamoto ,  Yusuke Maeda ,  Tomio Kudo

    IPC: H01B13/00 ,  C09D11/322 ,  C09D11/52 ,  H01B1/02 ,  H01B13/32

    CPC classification number: H01B13/003 ,  C09D11/322 ,  C09D11/52 ,  C23C18/1216 ,  C23C18/1295 ,  C23C18/14 ,  H01B1/026 ,  H01B13/322 ,  H05K3/105 ,  H05K3/1283 ,  H05K2203/1131 ,  H05K2203/1157 ,  H05K2203/1476

    Abstract: In a conductive film forming method using photo sintering, a conductive film having low electric resistance is easily formed. Disclosed is a conductive film forming method in which a conductive film is formed using a photo sintering, which includes the steps of: forming a liquid film made of a copper particulate dispersion on a substrate, drying the liquid film to form a copper particulate layer, subjecting the copper particulate layer to photo sintering to form a conductive film, attaching a sintering promoter to the conductive film, and further subjecting the conductive film having the sintering promoter attached to photo sintering. The sintering promoter is a compound which removes copper oxide from metallic copper. Thereby, the sintering promoter removes a surface oxide film of copper particulates in the conductive film.

    Abstract translation: 在使用光烧结的导电膜形成方法中，容易形成具有低电阻的导电膜。 公开了一种导电膜形成方法，其中使用光烧结形成导电膜，其包括以下步骤：在基底上形成由铜微粒分散体制成的液膜，干燥该液膜以形成铜颗粒层， 使铜颗粒层进行光烧结以形成导电膜，将烧结促进剂附着到导电膜上，并进一步对具有附着的烧结促进剂的导电膜进行光烧结。 烧结促进剂是从金属铜中除去氧化铜的化合物。 由此，烧结促进剂除去导电膜中的铜微粒的表面氧化膜。

    STRUCTURE INCLUDING COPPER PLATING LAYER OR COPPER ALLOY PLATING LAYER
    6.
    发明申请
    STRUCTURE INCLUDING COPPER PLATING LAYER OR COPPER ALLOY PLATING LAYER 有权

    公开(公告)号：US20220316085A1

    公开(公告)日：2022-10-06

    申请号：US17595032

    申请日：2020-04-30

    Applicant: ISHIHARA CHEMICAL CO., LTD.

    Inventor： Masaru HATABE ,  Hironori MURAKAMI ,  Fuka YAMAOKA

    IPC: C25D21/12 ,  C25D3/38 ,  C25D5/18

    Abstract: A structure includes a copper or copper alloy plating layer, in which Kirkendall void formation is suppressed. The copper or copper alloy plating layer is formed by electroplating at a prescribed first cathode current density by using a copper or copper alloy electroplating bath and then completing the electroplating after the first cathode current density is changed to a lower second cathode current density. The first cathode current density is a single cathode current density in the electroplating at this current density or an average cathode current density in the electroplating by combining plural cathode current densities. The first cathode current density is at lowest 5 A/dm2. A layer formed by changing the first cathode current density to the second cathode current density is a surface layer part of the copper or copper alloy plating layer, which can have a thickness of 0.05 μm to 15 μm.

    CONDUCTIVE FILM FORMING METHOD AND SINTERING PROMOTER
    10.
    发明申请
    CONDUCTIVE FILM FORMING METHOD AND SINTERING PROMOTER 审中-公开
    导电薄膜成型方法和烧结促进剂

    公开(公告)号：US20150030784A1

    公开(公告)日：2015-01-29

    申请号：US14383956

    申请日：2013-02-28

    Applicant: ISHIHARA CHEMICAL CO., LTD.

    Inventor： Yuichi Kawato ,  Yusuke Maeda ,  Tomio Kudo

    IPC: H01B13/00 ,  B22F7/04 ,  B22F3/10 ,  B22F7/00

    CPC classification number: H01B13/0016 ,  B22F3/10 ,  B22F3/22 ,  B22F7/008 ,  B22F7/04 ,  B22F2202/11 ,  H01B13/0026 ,  H01B13/003 ,  H05K3/1208 ,  H05K3/1283 ,  H05K2203/1157

    Abstract: In a conductive film forming method using photo sintering, a conductive film having low electric resistance is easily formed. The conductive film forming method is a method in which a conductive film is formed using photo sintering. This method includes the steps of forming a layer made of a sintering promoter on a substrate, forming a liquid film made of a copper particulate dispersion on the layer of the sintering promoter, drying the liquid film to form a copper particulate layer, and subjecting the copper particulate layer to photo sintering. The sintering promoter is a compound which removes copper oxide from metallic copper. Thereby, the sintering promoter removes a surface oxide film of copper particulates in photo sintering.

    Abstract translation: 在使用光烧结的导电膜形成方法中，容易形成具有低电阻的导电膜。 导电膜形成方法是使用光烧结形成导电膜的方法。 该方法包括在基板上形成由烧结促进剂构成的层的工序，在烧结促进剂层上形成由铜粒子分散液构成的液膜，干燥该液膜形成铜粒子层， 铜颗粒层进行光烧结。 烧结促进剂是从金属铜中除去氧化铜的化合物。 由此，烧结促进剂在光烧结中除去铜微粒的表面氧化膜。

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