公开(公告)号：US08614535B2

公开(公告)日：2013-12-24

申请号：US13275710

申请日：2011-10-18

Applicant: Yutaka Tsuji ,  Shigeru Nakayama

Inventor： Yutaka Tsuji ,  Shigeru Nakayama

IPC: H03H9/25 ,  H01L41/22 ,  H04R17/00

CPC classification number: C04B35/443 ,  B24B37/042 ,  C04B2235/945 ,  C04B2235/963 ,  H03H9/02015 ,  H03H9/02543

Abstract: A substrate having appropriate strength and allowing firm bonding to a piezoelectric substrate and the like can be obtained at a lower cost. The substrate for an SAW device is formed of spinel, and PV value representing difference in level of one main surface of the substrate is at least 2 nm and at most 8 nm. Preferably, average roughness Ra of one main surface of the substrate is at least 0.01 nm and at most 0.5 nm. With such characteristics, the main surface of the substrate to be bonded to a piezoelectric substrate of the SAW device can be bonded satisfactorily to the piezoelectric material forming the piezoelectric substrate utilizing van der Waals interaction.

Abstract translation: 可以以更低的成本获得具有适当强度并且能够牢固地粘合到压电基板等的基板。 用于SAW器件的衬底由尖晶石形成，并且表示衬底的一个主表面的电平差的PV值为至少2nm且至多8nm。 优选地，基板的一个主表面的平均粗糙度Ra为0.01nm以上且0.5nm以下。 通过这样的特性，可以使用范德华相互作用，使与SAW器件的压电基板接合的基板的主表面令人满意地粘结到形成压电基板的压电材料上。

公开(公告)号：US20130334039A1

公开(公告)日：2013-12-19

申请号：US14002491

申请日：2012-03-01

Applicant: Hiroshi Goto ,  Yuki Iwasaki

Inventor： Hiroshi Goto ,  Yuki Iwasaki

IPC: C23C14/34

CPC classification number: C23C14/3407 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3418 ,  C04B2235/963 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

Abstract: Provided are an oxide sintered body and a sputtering target which are suitable for use in producing an oxide semiconductor film for display devices and combine high electroconductivity with a high relative density and with which it is possible to form an oxide semiconductor film having a high carrier mobility. In particular, even when used in production by a direct-current sputtering method, the oxide sintered body and the sputtering target are less apt to generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible. This oxide sintered body is an oxide sintered body obtained by mixing zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta, and sintering the mixture, the oxide sintered body having a Vickers hardness of 400 Hv or higher.

Abstract translation: 本发明提供一种氧化物烧结体和溅射靶，其适用于制造显示装置用氧化物半导体膜，并且具有高相对密度的高导电性，并且可以形成具有高载流子迁移率的氧化物半导体膜 。 特别是，即使在通过直流溅射法生产中使用时，氧化物烧结体和溅射靶也不易产生结节，并且具有优异的直流放电稳定性，这使得长期稳定的放电成为可能。 该氧化物烧结体是通过将氧化锌，氧化锡和选自Al，Hf，Ni，Si，Ga，In和Ta中的至少一种金属（M金属）的氧化物混合而获得的氧化物烧结体 ，并烧结混合物，维氏硬度为400Hv以上的氧化物烧结体。

公开(公告)号：US08597743B2

公开(公告)日：2013-12-03

申请号：US12063389

申请日：2006-08-04

Applicant: Yukihiro Kanechika ,  Masanobu Azuma

Inventor： Yukihiro Kanechika ,  Masanobu Azuma

IPC: B32B1/00 ,  B32B1/02 ,  B32B1/08 ,  C04B35/00

CPC classification number: H01J61/302 ,  C04B35/581 ,  C04B2235/3208 ,  C04B2235/3222 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/652 ,  C04B2235/6586 ,  C04B2235/6587 ,  C04B2235/662 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/725 ,  C04B2235/786 ,  C04B2235/963 ,  H01J61/827 ,  Y10T428/131 ,  Y10T428/24479

Abstract: Provided is an aluminum nitride sintered body with high optical transmissivity and which has a smooth surface in the unpolished condition after firing. The aluminum nitride sintered body has an oxygen concentration of 450 ppm or less, a concentration of impurity elements excluding oxygen, nitrogen, and aluminum of 350 ppm or less, and an average crystal grain diameter of between 2 μm and 20 μm, and also has an arithmetic mean surface height Ra of 1 μm or less and a maximum height Rz of 10 μm or less in the unpolished condition after firing.

Abstract translation: 提供具有高透光率的氮化铝烧结体，并且在烧成后具有未抛光状态的光滑表面。 氮化铝烧结体的氧浓度为450ppm以下，除氧，氮，铝以外的杂质元素浓度为350ppm以下，平均结晶粒径为2μm〜20μm，并且还具有 烧成后的未磨光状态下的算术平均表面高度Ra为1μm以下，最大高度Rz为10μm以下。

公开(公告)号：US08586493B2

公开(公告)日：2013-11-19

申请号：US12737316

申请日：2009-07-03

Applicant: Youichirou Kaga ,  Junichi Watanabe

Inventor： Youichirou Kaga ,  Junichi Watanabe

IPC: C04B35/584 ,  H01L23/15

CPC classification number: H05K1/0306 ,  C04B35/584 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3852 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  H01L23/12 ,  H01L23/15 ,  H01L23/3735 ,  H01L2924/0002 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A silicon nitride sintered body, wherein in a silicon nitride substrate consisting of crystal grains of β-type silicon nitride and a grain boundary phase containing at least one type of rare earth element (RE), magnesium (Mg) and silicon (Si), the grain boundary phase consists of an amorphous phase and a MgSiN2 crystal phase. The X-ray diffraction peak intensity of any crystal plane of a crystal phase containing the rare earth element (RE) is less than 0.0005 times the sum of the diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the β-type silicon nitride; and the X-ray diffraction peak intensity of (121) of the MgSiN2 crystal phase is 0.0005 to 0.003 times the sum of the X-ray diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the β-type silicon nitride.

Abstract translation: 一种氮化硅烧结体，其中，在由β型氮化硅的晶粒构成的氮化硅衬底和含有至少一种稀土元素（RE），镁（Mg）和硅（Si）的晶界相组成的氮化硅衬底中， 晶界相由非晶相和MgSiN 2结晶相组成。 包含稀土元素（RE）的晶相的任何晶面的X射线衍射峰强度小于（110），（200），（101），（210）的衍射峰强度之和的0.0005倍 ），（201），（310），（320）和（002） （110），（200），（101），（210），（210），（210）的X射线衍射峰强度之和为0.0005〜0.003倍，MgSiN2结晶相的（121）的X射线衍射峰强度为 201），（310），（320）和（002）。

公开(公告)号：US08585960B2

公开(公告)日：2013-11-19

申请号：US12283726

申请日：2008-09-15

Applicant: Tsuneaki Ohashi ,  Masakatsu Inoue ,  Toshiichi Ikami ,  Keiichiro Watanabe ,  Kunihiko Yoshioka ,  Kazuhi Matsumoto

Inventor： Tsuneaki Ohashi ,  Masakatsu Inoue ,  Toshiichi Ikami ,  Keiichiro Watanabe ,  Kunihiko Yoshioka ,  Kazuhi Matsumoto

IPC: C04B37/00

CPC classification number: H01J9/247 ,  B28B1/002 ,  C04B35/115 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/632 ,  C04B35/6342 ,  C04B37/005 ,  C04B2235/3206 ,  C04B2235/6023 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/786 ,  C04B2235/94 ,  C04B2235/945 ,  C04B2235/963 ,  C04B2235/9661 ,  C04B2237/064 ,  C04B2237/343 ,  C04B2237/708 ,  H01J61/361 ,  Y10T428/19

Abstract: A first inorganic powder molded body and a second inorganic powder molded body are obtained. Each of the bodies contains an inorganic powder, an organic dispersion medium having a reactive functional group and a gelling agent and is solidified by chemical reaction of the organic dispersion medium and the gelling agent. Slurry containing a powder component and an organic dispersion medium is applied to a joint surface of the first inorganic powder molded body. The inorganic powder molded bodies are allowed to abut on each other while interposing the slurry therebetween, and integrated together into a joined body. A sintered body is obtained by sintering the joined body.

Abstract translation: 获得第一无机粉末成型体和第二无机粉末成型体。 每个主体包含无机粉末，具有反应性官能团的有机分散介质和胶凝剂，并通过有机分散介质和胶凝剂的化学反应固化。 将含有粉末成分和有机分散介质的浆料施加到第一无机粉末成形体的接合面。 使无机粉末成形体彼此抵接，同时在其间插入浆料，并且将其一体化成接合体。 通过烧结接合体获得烧结体。

公开(公告)号：US20130277613A1

公开(公告)日：2013-10-24

申请号：US13865950

申请日：2013-04-18

Applicant: NITTO DENKO CORPORATION

Inventor： Hiroaki Miyagawa ,  Guang Pan ,  Hironaka Fujii ,  Bin Zhang ,  Amane Mochizuki ,  Toshitaka Nakamura

IPC: C04B35/64

CPC classification number: C04B38/0038 ,  B32B18/00 ,  C04B35/14 ,  C04B35/44 ,  C04B35/50 ,  C04B35/505 ,  C04B35/58 ,  C04B35/597 ,  C04B35/6261 ,  C04B35/6263 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/63488 ,  C04B35/64 ,  C04B38/067 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/5409 ,  C04B2235/6025 ,  C04B2235/612 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6581 ,  C04B2235/763 ,  C04B2235/963 ,  C04B2235/9638 ,  C04B2235/9646 ,  C04B2235/9653 ,  C04B2237/343 ,  C04B2237/562 ,  C04B2237/567 ,  C04B2237/704

Abstract: A method and apparatus for sintering flat ceramics using a mesh or lattice is described herein.

公开(公告)号：US08512589B2

公开(公告)日：2013-08-20

申请号：US13146839

申请日：2010-01-29

Applicant: Hirofumi Yoshida ,  Yukiko Nakamura ,  Satoshi Goto

Inventor： Hirofumi Yoshida ,  Yukiko Nakamura ,  Satoshi Goto

IPC: H01F1/34 ,  C09B35/38

CPC classification number: H01F41/0246 ,  C01G49/0072 ,  C04B35/2658 ,  C04B35/6262 ,  C04B35/62645 ,  C04B35/62655 ,  C04B35/62695 ,  C04B35/64 ,  C04B2235/3208 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3275 ,  C04B2235/3418 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/727 ,  C04B2235/78 ,  C04B2235/786 ,  C04B2235/94 ,  C04B2235/945 ,  C04B2235/963 ,  C04B2235/9638 ,  H01F1/344 ,  H01F1/36 ,  H01F3/08

Abstract: Disclosed is a MnZn ferrite core comprising basic components, subcomponents and unavoidable impurities. To the basic components comprising: iron oxide (as Fe2O3): 51.0-54.5 mol %, zinc oxide (as ZnO): 8.0-12.0 mol % and manganese oxide (as MnO): remainder, are added silicon oxide (as SiO2): 50-400 mass ppm and calcium oxide (as CaO): 50-4000 ppm as subcomponents and in the unavoidable impurities, phosphorous, boron, sulfur and chlorine are respectively kept to: less than 3 mass ppm, less than 3 mass ppm, less than 5 mass ppm, and less than 10 mass ppm. The ratio of the measure specific surface area to the ideal specific surface area of the MnZn ferrite core satisfies the formula: Measured specific surface area/ideal specific surface area

Abstract translation: 公开了包含碱性成分，亚成分和不可避免的杂质的MnZn铁氧体磁心。 对于包含氧化铁（以Fe 2 O 3计）：51.0-54.5mol％，氧化锌（ZnO）：8.0-12.0mol％和氧化锰（作为MnO））的基本组分：余量加入氧化硅（SiO 2）： 50-400质量ppm和氧化钙（作为CaO）：50-4000ppm作为次要成分，在不可避免的杂质中，磷，硼，硫和氯分别保持为：小于3质量ppm，小于3质量ppm，少 大于5质量ppm，小于10质量ppm。 MnZn铁氧体磁芯的测量比表面积与理想比表面积的比例满足下式：测量比表面积/理想比表面积<1500。

公开(公告)号：US08498093B2

公开(公告)日：2013-07-30

申请号：US12877349

申请日：2010-09-08

Applicant: Masao Nishioka

Inventor： Masao Nishioka

IPC: H01T23/00

CPC classification number: H01L21/6833 ,  C04B35/053 ,  C04B35/5607 ,  C04B35/5611 ,  C04B35/5626 ,  C04B35/62655 ,  C04B35/62695 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3277 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3847 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/963

Abstract: An electrostatic chuck includes an electrostatic electrode embedded in a ceramic base having a wafer-supporting surface capable of holding a wafer, the electrostatic electrode being parallel to the wafer-supporting surface. The ceramic base is composed of a dense ceramic having a MgO content of 99% by weight or more. The electrostatic electrode is a disc-like electrode composed of, for example, at least one metal selected from the group consisting of Ni, Co, and Fe. The electrostatic electrode includes a conductive tablet connected to the center thereof. The tablet is exposed at the bottom of a counter-bored hole formed so as to reach the tablet from a back surface of the ceramic base, and is connected to a feeding terminal, composed of Ni, inserted into the counter-bored hole.

Abstract translation: 静电卡盘包括嵌入在具有能够保持晶片的晶片支撑表面的陶瓷基体中的静电电极，静电电极平行于晶片支撑表面。 陶瓷基体由MgO含量为99重量％以上的致密陶瓷构成。 静电电极是由例如由Ni，Co，Fe组成的组中的至少一种金属构成的盘状电极。 静电电极包括连接到其中心的导电片。 片剂暴露在形成为从陶瓷基底的后表面到达片剂的反钻孔的底部，并且连接到插入到钻孔中的由Ni构成的馈电端子。

公开(公告)号：US08475613B2

公开(公告)日：2013-07-02

申请号：US12434069

申请日：2009-05-01

Applicant: Akiyoshi Hattori ,  Takahiro Takahashi

Inventor： Akiyoshi Hattori ,  Takahiro Takahashi

IPC: C03B29/00 ,  C04B33/34 ,  C04B37/00 ,  B32B37/00 ,  B32B9/00 ,  B29C65/00

CPC classification number: C04B37/005 ,  B32B18/00 ,  B32B2315/02 ,  C04B35/581 ,  C04B35/62665 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3418 ,  C04B2235/3865 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2235/9692 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/704

Abstract: A bonding agent is provided which includes a flux containing either calcium aluminate or calcium oxide and aluminum oxide and aluminum nitride powder.

Abstract translation: 提供了一种粘合剂，其包括含有铝酸钙或氧化钙和氧化铝和氮化铝粉末的助熔剂。

公开(公告)号：US20130160492A1

公开(公告)日：2013-06-27

申请号：US13335990

申请日：2011-12-23

Applicant: Guillermo R Villalobos ,  Bryan Sadowski ,  Michael Hunt ,  Robert E. Miklos ,  Shyam S. Bayya ,  Woohong Kim ,  Jasbinder S. Sanghera ,  Ishwar D. Aggarwal

Inventor： Guillermo R Villalobos ,  Bryan Sadowski ,  Michael Hunt ,  Robert E. Miklos ,  Shyam S. Bayya ,  Woohong Kim ,  Jasbinder S. Sanghera ,  Ishwar D. Aggarwal

IPC: C03B19/09 ,  B28B3/00

CPC classification number: C04B35/44 ,  B28B3/025 ,  B28B7/366 ,  C04B35/053 ,  C04B35/50 ,  C04B35/505 ,  C04B35/645 ,  C04B2235/3203 ,  C04B2235/3225 ,  C04B2235/443 ,  C04B2235/445 ,  C04B2235/763 ,  C04B2235/764 ,  C04B2235/9623 ,  C04B2235/963 ,  C04B2235/9653

Abstract: A method for making a smooth ceramic including loading ceramic powder to be densified into a hot press die, placing one or more spacers with a polished surface between a hot press punch and the ceramic powder, placing the die and punch into a hot press and hot pressing the ceramic powder, and removing a smooth ceramic shape that requires no subsequent polishing or processing and has a surface roughness of 5 nm RMS or better. The smooth ceramic shape may be transparent, and it may be spinel, magnesia, yttria, lutetia, scandia, YAG, any composites thereof, or any of their rare earth doped compounds. Also disclosed is the related smooth ceramic made by this process.

Abstract translation: 一种制造光滑陶瓷的方法，包括将陶瓷粉末加载到热压模中，将一个或多个抛光表面的间隔物放置在热压冲头和陶瓷粉末之间，将模具和冲头放入热压机 压制陶瓷粉末，除去不需要后续抛光或加工的光滑陶瓷形状，并具有5​​nm RMS或更好的表面粗糙度。 光滑的陶瓷形状可以是透明的，并且它可以是尖晶石，氧化镁，氧化钇，镥，Scandia，YAG，它们的任何复合材料，或它们的稀土掺杂化合物。 还公开了通过该方法制造的相关的光滑陶瓷。