SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE
    8.
    发明申请
    SILICON NITRIDE SUBSTRATE MANUFACTURING METHOD, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE 有权
    硅氮化物衬底制造方法,氮化硅衬底,氮化硅电路衬底和半导体模块

    公开(公告)号:US20110272187A1

    公开(公告)日:2011-11-10

    申请号:US13138136

    申请日:2010-01-13

    摘要: Provided is a manufacturing method with which a high thermal conductivity silicon nitride substrate having excellent sintering performance can be manufactured without the occurrence of a molding crack or degreasing crack, as well as to provide a silicon nitride substrate, and a silicon nitride circuit board and a semiconductor module using said silicon nitride substrate.In this silicon nitride substrate manufacturing method, in which a slurry is produced by mixing a silicon nitride powder, a sintering additive powder, and a binder in an organic solvent which is a dispersion medium, and the slurry is formed into a sheet, followed by degreasing and sintering, the oxygen content of the silicon nitride powder is 2.0 mass % or less and the specific surface area of the same is 3 to 11 m2/g, the additive ratio of the sintering additive powder is 4 to 15 mol %, and the water content ratio of the organic solvent is 0.03 to 3 mass %.

    摘要翻译: 提供一种可以制造出具有优异的烧结性能的高导热性氮化硅衬底而不发生模制裂纹或脱脂裂纹以及提供氮化硅衬底和氮化硅电路板和 使用所述氮化硅衬底的半导体模块。 在该氮化硅衬底制造方法中,其中通过在作为分散介质的有机溶剂中混合氮化硅粉末,烧结添加剂粉末和粘合剂来制备浆料,并且将浆料形成为片材,然后 脱脂烧结,氮化硅粉末的氧含量为2.0质量%以下,比表面积为3〜11m 2 / g,烧结添加剂粉末的添加比例为4〜15摩尔%, 有机溶剂的含水率为0.03〜3质量%。