公开(公告)号：US07794394B2

公开(公告)日：2010-09-14

申请号：US10517280

申请日：2003-05-22

申请人： John V. Frangioni

发明人： John V. Frangioni

IPC分类号： A61B1/06

CPC分类号： H01L31/111 ,  A61B5/0059 ,  A61B5/7425 ,  G01J3/36 ,  G01N21/6428 ,  G01N21/6456 ,  G02B5/201 ,  G02B23/12 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14647 ,  H01L27/14806 ,  H01L27/14837 ,  H01L27/14843 ,  H01L27/14868 ,  H01L31/101

摘要： An imaging device captures both a visible light image and a diagnostic image, the diagnostic image corresponding to emissions from an imaging medium within the object. The visible light image (which may be color or grayscale) and the diagnostic image may be superimposed to display regions of diagnostic significance within a visible light image. A number of imaging media may be used according to an intended application for the imaging device, and an imaging medium may have wavelengths above, below, or within the visible light spectrum. The devices described herein may be advantageously packaged within a single integrated device or other solid state device, and/or employed in an integrated, single-camera medical imaging system, as well as many non-medical imaging systems that would benefit from simultaneous capture of visible-light wavelength images along with images at other wavelengths.

摘要翻译： 成像装置捕获可见光图像和诊断图像，诊断图像对应于来自对象内的成像介质的发射。 可见光图像（其可以是彩色或灰度）和诊断图像可以叠加以在可见光图像内显示具有诊断意义的区域。 可以根据成像装置的预期应用使用多个成像介质，并且成像介质可以具有在可见光光谱之上，之下或之内的波长。 本文描述的装置可以有利地封装在单个集成装置或其他固态装置内，和/或用于集成的单相机医疗成像系统，以及许多非医学成像系统，其将受益于同时捕获 可见光波长图像以及其他波长的图像。

公开(公告)号：US07528361B2

公开(公告)日：2009-05-05

申请号：US11767195

申请日：2007-06-22

申请人： Rudolf Buchberger ,  Jaime Estevez-Garcia

发明人： Rudolf Buchberger ,  Jaime Estevez-Garcia

IPC分类号： G01J3/50 ,  H01J5/16

CPC分类号： H01L31/111

摘要： A semiconductor opto device is disclosed. One embodiment provides an optodiode. The optodiode has a relative spectral sensitivity that is adapted to the relative spectral sensitivity of an eye, wherein, correspondingly adapted to the spectral sensitivity of the eye, a switch-on or switch-off process of the optothyristor or optotriac is triggered.

摘要翻译： 公开了半导体光电装置。 一个实施例提供光电二极管。 光电二极管具有适应于眼睛的相对光谱灵敏度的相对光谱灵敏度，其中相应地适应于眼睛的光谱灵敏度，触发光闸晶体或光电三极管的接通或断开过程。

公开(公告)号：US20050230705A1

公开(公告)日：2005-10-20

申请号：US10512501

申请日：2003-04-28

申请人： Geoff Taylor

发明人： Geoff Taylor

IPC分类号： H01L20060101 ,  H01L27/146 ,  H01L27/148 ,  H01L29/205 ,  H01L29/417 ,  H01L29/74 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/111 ,  H01L31/115

CPC分类号： H01L31/111 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14806 ,  H01L27/14843 ,  H01L27/1485 ,  H01L29/205 ,  H01L29/74 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/035263 ,  H01L31/115 ,  Y02E10/544

摘要： An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elements, which are adapted to receive electromagnetic radiation in a desired portion of the THz region, are electrically coupled (or integrally formed with) the p-channel injector electrodes of the heterojunction thyristor device such the that antenna elements are electrically connected to the p-type modulation doped quantum well interface of the device. THz radiation supplied by the antenna elements to the p-type quantum well interface increases electron temperature of a two-dimensional electron gas at the p-type modulation doped quantum well interface thereby producing a current resulting from thermionic emission over a potential barrier provided by said first-type modulation doped quantum well interface. This current flows over the p-type channel barrier to the ntype quantum well interface, thereby causing charge to accumulate in the n-type quantum well interface. The accumulated charge in the n-type quantum well interface is related to the intensity of the received THz radiation. The heterojunction-thyristor-based THz detector is suitable for many applications, including data communication applications and imaging applications.

摘要翻译： 改进的THz检测机构包括由n型量子阱基双极晶体管和p型量子阱基双极晶体管逻辑形成的异质结晶闸管结构，其垂直布置以共享公共集电极区域。 适于在THz区域的所需部分接收电磁辐射的天线元件与异质结晶闸管器件的p沟道注入器电极电耦合（或整体形成），使得天线元件电连接到p 型调制掺杂量子阱接口。 由天线元件向p型量子阱界面提供的太赫兹辐射增加了在p型调制掺杂量子阱界面处的二维电子气的电子温度，从而产生由所述电子势垒产生的电流， 第一类调制掺杂量子阱界面。 该电流流过p型沟道势垒到n型量子阱界面，从而使电荷累积在n型量子阱界面中。 n型量子阱界面中的累积电荷与接收的THz辐射的强度有关。 基于异质结晶闸管的THz检测器适用于许多应用，包括数据通信应用和成像应用。

公开(公告)号：US20030169359A1

公开(公告)日：2003-09-11

申请号：US10383428

申请日：2003-03-07

申请人： Foven, Inc. a California Corporation

发明人： Richard B. Merrill ,  Richard F. Lyon

IPC分类号： H04N005/335

CPC分类号： H04N9/045 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14652 ,  H01L31/111 ,  H04N5/353 ,  H04N5/3537 ,  H04N5/3745 ,  H04N2209/047

摘要： An active pixel sensor is disposed on a semiconductor substrate of a first conductivity type, and comprises a plurality of semiconductor regions disposed in the substrate, each successive one of the semiconductor regions and alternating between the first conductivity type and a second conductivity type opposite to that of the first conductivity type being enclosed entirely within another enclosing one of the semiconductor regions. A first enclosing one of the semiconductor regions containing all other ones of the semiconductor regions is of the second conductivity type. A plurality of reset switches each has a first terminal coupled to a different one of the alternating semiconductor regions, and a second terminal switchably coupled to a reset potential. Each one of a plurality of storage nodes is coupled to a separate one of the plurality of alternating semiconductor regions.

摘要翻译： 有源像素传感器设置在第一导电类型的半导体衬底上，并且包括设置在衬底中的多个半导体区域，每个连续的一个半导体区域和第一导电类型与第二导电类型相反的第二导电类型之间交替。 的第一导电类型被完全封闭在另一封闭的半导体区域中。 包含半导体区域中的所有其他半导体区域的第一封装的一个半导体区域是第二导电类型。 多个复位开关各自具有耦合到交替半导体区域中的不同一个的第一端子和可切换地耦合到复位电位的第二端子。 多个存储节点中的每一个耦合到多个交替半导体区域中的单独一个。

公开(公告)号：US4450463A

公开(公告)日：1984-05-22

申请号：US278804

申请日：1981-06-29

申请人： Raymond Chin

发明人： Raymond Chin

IPC分类号： H01L27/144 ,  H01L31/0352 ,  H01L31/109 ,  H01L31/111 ,  H01L27/14

CPC分类号： B82Y20/00 ,  H01L27/1443 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/111

摘要： Disclosed is a multiple-quantum-layer detector for responding to photons having a predetermined amount of energy. The detector includes a purality of parallel layers of a first semiconducting material having a first conduction band energy level, with a plurality of layers of a second semiconducting material parallel to the first layers and having a second conduction band energy level differing from the first conduction band energy level by no more than the predetermined energy. The second layers alternate with the first to establish a plurality of parallel heterojunctions. First and second electrodes are provided for applying an electric potential across the alternating layers.

摘要翻译： 公开了一种用于响应具有预定量能量的光子的多量子层检测器。 检测器包括具有第一导带能量级的多层平行的第一半导体材料层，多层平行于第一层的第二半导体材料层，并且具有与第一导带不同的第二导带能级 能量水平不超过预定能量。 第二层与第一层交替以建立多个平行异质结。 提供第一和第二电极用于跨交替层施加电位。

公开(公告)号：US4399448A

公开(公告)日：1983-08-16

申请号：US230873

申请日：1981-02-02

申请人： John A. Copeland, III

发明人： John A. Copeland, III

IPC分类号： H01L31/10 ,  H01L31/107 ,  H01L31/111 ,  H01L31/12 ,  H01L29/161 ,  H01L27/14 ,  H01L33/00

CPC分类号： H01L31/111 ,  H01L31/1075 ,  H01L31/125

摘要： Large current gains and high degrees of sensitivity to impinging primary photons are realized in photon feedback photodetectors embodying the invention. A photocurrent generated by an internal photodiode (10, 11) in response to the primary photons (6) causes secondary photons to be emitted by internal serially connected luminescence diodes (12, 13; 14, 15). Secondary photons traveling away from the photodiode are redirected by a reflector (16) to impinge on the photodiode and thereby sustain the photocurrent. Gains of the order of 100 are realized by these photodetectors.

摘要翻译： 在体现本发明的光子反馈光电探测器中实现大电流增益和对入射光子的高度敏感度。 由内部光电二极管（10,11）响应于主光子（6）产生的光电流使得内部串联的发光二极管（12,13; 14,15）发射次级光子。 远离光电二极管的次级光子通过反射器（16）重新定向以照射在光电二极管上，从而维持光电流。 这些光电探测器实现了100级的增益。

公开(公告)号：US4107721A

公开(公告)日：1978-08-15

申请号：US762675

申请日：1977-01-26

申请人： Gabriel Lorimer Miller

发明人： Gabriel Lorimer Miller

IPC分类号： G01J1/02 ,  G02F2/00 ,  G02F2/02 ,  H01L31/10 ,  H01L31/11 ,  H01L31/111 ,  H01L27/14

CPC分类号： H01L31/111 ,  H01L31/1105

摘要： A phototransistor is operated with a floating base but with the transistor operating point defined by prebiasing the base, typically by injecting the base current through a prebias emitter in the collector region outside of the depletion layer. The phototransistor has a signal to noise ratio comparable to those of optimized avalanche photodiodes but operates at a significantly lower voltage and without need for temperature compensation. The phototransistor is especially well-suited for optical communications at high data rates.

摘要翻译： 光电晶体管以浮动基极工作，但通过预先偏置基极来限定晶体管工作点，通常通过将基极电流注入耗尽层外部的集电极区域中的预制发射极。 光电晶体管的信噪比与优化的雪崩光电二极管的信噪比相当，但工作在显着较低的电压，而不需要温度补偿。 光电晶体管特别适用于高数据速率的光通信。

公开(公告)号：US3725820A

公开(公告)日：1973-04-03

申请号：US3725820D

申请日：1972-01-17

申请人： MATSUSHITA ELECTRIC WORKS LTD

发明人： KOJIMA K ,  KOJIMA K ,  ABE T

IPC分类号： G08B23/00 ,  H01L29/00 ,  H01L31/111 ,  H02M1/092 ,  H03B17/00 ,  H03B7/06

CPC分类号： H03B17/00 ,  G08B23/00 ,  H01L29/00 ,  H01L31/111 ,  H02M1/092

摘要： A photosensitive solid oscillator, which comprises an impurity layer formed on a surface of a semi-conductor wafer, two separate impurity layers formed one the other surface of said wafer as spaced along the surface from each other, and electrodes respectively provided at least on each of the latter two impurity layers. The respective impurity layers on both surfaces of the wafer are of a reversely conducting type semiconductor with respect to said wafer and contain an impurity of higher concentration than in the wafer.

摘要翻译： 一种光敏固体振荡器，其包括形成在半导体晶片的表面上的杂质层，沿着所述表面间隔开形成一个所述晶片的另一个表面的两个分开的杂质层，以及至少分别设置在每一个上的电极 的后两个杂质层。 晶片两面各自的杂质层相对于晶片为反向导电型半导体，并且含有比晶片高的浓度的杂质。