公开(公告)号：US08189635B2

公开(公告)日：2012-05-29

申请号：US12768073

申请日：2010-04-27

申请人： Shiro Sakai

发明人： Shiro Sakai

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/12 ,  H01S5/34333 ,  Y10S977/72

摘要： A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.

摘要翻译： 具有纳米图案的激光二极管设置在基板上。 第一导电型覆盖层设置在基板上，第二导电型覆盖层设置在第一导电型覆盖层上。 在第一导电型覆盖层和第二导电型覆盖层之间插入有源层。 柱状纳米图案布置在第二导电型覆盖层的表面，以形成诸如分布反馈激光二极管的激光二极管。

公开(公告)号：US08139619B2

公开(公告)日：2012-03-20

申请号：US13209054

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202

摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

摘要翻译： 提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。 在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分 用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。 例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度 凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

公开(公告)号：US20120058591A1

公开(公告)日：2012-03-08

申请号：US12807399

申请日：2010-09-04

申请人： Brad M. Siskavich

发明人： Brad M. Siskavich

IPC分类号： H01L31/18

CPC分类号： H01L31/1876 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L31/0248 ,  H01L31/06875 ,  H01L31/184 ,  H01L31/1892 ,  H01L33/005 ,  H01L33/02 ,  H01S5/0202 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

摘要翻译： 一种制造外延结构的方法，包括将蚀刻停止层施加到衬底的一侧，然后在所述衬底的第一侧上生长至少一个外延层，翻转衬底，生长第二蚀刻停止层和至少一个外延层 将载体介质施加到每一侧上的最终外延层，将基板沿着外延平面分成两部分，以形成分离的外延结构，去除任何残余的基板并去除蚀刻停止。

公开(公告)号：US20120033701A1

公开(公告)日：2012-02-09

申请号：US13274710

申请日：2011-10-17

申请人： Yasuyuki BESSHO ,  Hiroki OHBO ,  Kunio TAKEUCHI ,  Seiichi TOKUNAGA ,  Yasumitsu KUNOH ,  Masayuki HATA

发明人： Yasuyuki BESSHO ,  Hiroki OHBO ,  Kunio TAKEUCHI ,  Seiichi TOKUNAGA ,  Yasumitsu KUNOH ,  Masayuki HATA

IPC分类号： H01S5/026

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B7/22 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4087 ,  H04N9/3161 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二 沿着至少第一凹槽的半导体激光器件衬底。

公开(公告)号：US08105857B2

公开(公告)日：2012-01-31

申请号：US12837306

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/18

CPC分类号： H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341

摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。 激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

公开(公告)号：US20110300653A1

公开(公告)日：2011-12-08

申请号：US12837306

申请日：2010-07-15

申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

IPC分类号： H01L33/48

CPC分类号： H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341

摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。 激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

公开(公告)号：US20110299560A1

公开(公告)日：2011-12-08

申请号：US12837291

申请日：2010-07-15

申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

IPC分类号： H01S5/10 ,  H01S5/323 ,  H01L33/32

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： In the method for fabricating a III-nitride semiconductor laser device, a substrate product is formed, and the substrate product has a laser structure including a substrate that is made of a hexagonal III-nitride semiconductor and has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface, and thereafter a first surface of the substrate product is scribed to form a scribed mark extending in a direction of the a-axis of the hexagonal III-nitride semiconductor. After forming the scribed mark, breakup of the substrate product is carried out by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region. This step results in forming another substrate product and a laser bar. The substrate product is divided into two, the first region and the second region, by a predetermined reference line, and the first and second regions are adjacent to each other. The laser bar has first and second end faces that extend from the first surface to a second surface and are formed by the breakup. The first and second end faces form a laser cavity of the III-nitride semiconductor laser device. The c-axis of the hexagonal III-nitride semiconductor of the substrate is inclined at an angle ALPHA with respect to a normal axis toward the m-axis of the hexagonal III-nitride semiconductor. The first and second end faces intersect with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and the normal axis.

摘要翻译： 在制造III族氮化物半导体激光器件的方法中，形成衬底产品，并且衬底产品具有包括由六边形III族氮化物半导体制成并具有半极性主表面的衬底的激光结构，并且半导体 区域形成在半极性主表面上，然后刻划基板产品的第一表面以形成在六边形III族氮化物半导体的a轴方向上延伸的划线标记。 在形成刻划之后，通过在衬底产品的第二区域压制同时支撑衬底产品的第一区域但不支撑第二区域来进行衬底产品的分解。 该步骤导致形成另一衬底产品和激光棒。 基板产品通过预定的参考线分成两个，第一区域和第二区域，并且第一和第二区域彼此相邻。 激光棒具有从第一表面延伸到第二表面并且通过分解形成的第一和第二端面。 第一和第二端面形成III族氮化物半导体激光器件的激光腔。 基板的六边形III族氮化物半导体的c轴相对于向六边形III族氮化物半导体的m轴的法线轴线倾斜角度ALPHA。 第一和第二端面与由六边形III族氮化物半导体的m轴和法线轴定义的m-n平面相交。

公开(公告)号：US20110292956A1

公开(公告)日：2011-12-01

申请号：US13209054

申请日：2011-08-12

申请人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

发明人： Shimpei TAKAGI ,  Yusuke YOSHIZUMI ,  Koji KATAYAMA ,  Masaki UENO ,  Takatoshi IKEGAMI

IPC分类号： H01S5/323 ,  H01S5/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202

摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

摘要翻译： 提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。 在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分 用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。 例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度 凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

公开(公告)号：US08064492B2

公开(公告)日：2011-11-22

申请号：US12693169

申请日：2010-01-25

申请人： Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

发明人： Yasuyuki Bessho ,  Hiroki Ohbo ,  Kunio Takeuchi ,  Seiichi Tokunaga ,  Yasumitsu Kunoh ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B7/22 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4087 ,  H04N9/3161 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二 沿着至少第一凹槽的半导体激光器件衬底。

公开(公告)号：US08022424B2

公开(公告)日：2011-09-20

申请号：US11806884

申请日：2007-06-05

申请人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

发明人： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Kayoko Kikuchi ,  Rintaro Koda ,  Norihiko Yamaguchi

IPC分类号： H01L33/14

CPC分类号： H01S5/18347 ,  H01L22/12 ,  H01L2924/0002 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/423 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.