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    SEMICONDUCTOR STACK AND VERTICAL CAVITY SURFACE EMITTING LASER
    51.
    发明申请
    SEMICONDUCTOR STACK AND VERTICAL CAVITY SURFACE EMITTING LASER 有权
    半导体堆叠和垂直孔表面发射激光

    公开(公告)号：US20130243024A1

    公开(公告)日：2013-09-19

    申请号：US13790025

    申请日：2013-03-08

    Applicant: Kei Hara

    Inventor： Kei Hara

    IPC: H01S5/343

    CPC classification number: H01S5/343 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18358 ,  H01S5/18383 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3434 ,  H01S5/34373

    Abstract: A semiconductor stack includes a semiconductor DBR (Distributed Bragg Reflector) formed on a substrate, and a resonator formed on the semiconductor DBR laminating wide-band semiconductor layers and active layers alternately. Each of the active layers includes MQWs (Multiple Quantum Wells) and two spacer layers formed one on each surface of the MQWs. The MQWs are formed by laminating barrier layers and quantum well layers alternately. There are n layers of the wide-band semiconductor layer formed, and a band gap Egm of an m-th wide-band semiconductor layer counting from the substrate and a band gap Egm-1 of an m−1-th wide-band semiconductor layer counting from the substrate satisfy Egm-1

    Abstract translation: 半导体堆叠包括形成在衬底上的半导体DBR（分布式布拉格反射器）和形成在半导体DBR上的谐振器，交替地层叠宽带半导体层和有源层。 每个活性层包括MQW（多量子阱）和在MQW的每个表面上形成的两个间隔层。 MQW通过交替层叠阻挡层和量子阱层而形成。 形成宽带半导体层的n层，从基板计数的第m宽带半导体层的带隙Egm和第m-1宽带半导体的带隙Egm-1 从衬底的层计数满足Egm-1

    TERAHERTZ QUANTUM CASCADE LASERS (QCLS)
    53.
    发明申请
    TERAHERTZ QUANTUM CASCADE LASERS (QCLS) 审中-公开
    TERAHERTZ QUANTUM CASCADE LASERS（QCLS）

    公开(公告)号：US20120207186A1

    公开(公告)日：2012-08-16

    申请号：US13148459

    申请日：2010-02-16

    Applicant: Mikhail Belkin ,  William Masselink

    Inventor： Mikhail Belkin ,  William Masselink

    IPC: H01S5/34

    CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/3406 ,  H01S2302/02

    Abstract: Quantum cascade lasers (QCLs), and methods of manufacture of QCLs, comprising an active portion. In some embodiments, the active portion can comprise: a plurality of tensiley strained quantum barrier layers, each comprising GayIn1-yAs; and a plurality of compressively strained quantum well layers, each comprising GaxIn1-xAs. In some embodiments, the active portion can comprise: a plurality of compressively strained quantum barrier layers, each comprising AlyIn1-yAs; and a plurality of tensiley strained quantum well layers, each comprising GaxIn1-xAs. The active portion can be grown on InP substrate.

    Abstract translation: 量子级联激光器（QCL）以及QCL的制造方法，其包括有源部分。 在一些实施方案中，活性部分可以包括：多个拉伸应变量子势垒层，每个包含GayIn1-yAs; 以及多个压缩应变量子阱层，每个包括GaxIn1-xAs。 在一些实施例中，有源部分可以包括：多个压缩应变量子势垒层，每个包含AlyIn1-yAs; 和多个拉伸应变量子阱层，每个包含GaxIn1-xAs。 活性部分可以在InP衬底上生长。

    GAN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION
    54.
    发明申请
    GAN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION 失效
    基于GAN的激光二极管与主动区域的错位分离

    公开(公告)号：US20110292957A1

    公开(公告)日：2011-12-01

    申请号：US12789936

    申请日：2010-05-28

    Applicant: Rajaram Bhat ,  Dmitry Sizov

    Inventor： Rajaram Bhat ,  Dmitry Sizov

    IPC: H01S5/323 ,  H01L21/28 ,  H01S5/343

    CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3406 ,  H01S2301/173

    Abstract: A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×106/cm2. The strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value. In addition, the cumulative strain-thickness product of the active region calculated for the growth on a the relaxed N-side waveguiding layer is less than its strain relaxation critical value. As a result, the N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations and the P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations. Additional embodiments are disclosed and claimed.

    Abstract translation: 提供一种GaN基边缘发射激光器，其包括半极性GaN衬底，有源区，N侧波导层，P侧波导层，N型覆层和P型覆层。 GaN衬底的特征在于大约为1×106 / cm2的穿透位错密度。 N侧波导层的应变厚度乘积超过其应变松弛临界值。 此外，对于在松弛的N侧波导层上生长计算的有源区域的累积应变 - 厚度乘积小于其应变松弛临界值。 结果，N型覆层和N侧波导层之间的N侧界面包括一组N侧失配位错和P型覆层与P侧之间的P侧界面 波导层包括一组P侧错配位错。 公开并要求保护附加实施例。

    Semiconductor laser
    55.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US07974323B2

    公开(公告)日：2011-07-05

    申请号：US12616944

    申请日：2009-11-12

    Applicant: Toru Yamamoto

    Inventor： Toru Yamamoto

    IPC: H01S5/00

    CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3406 ,  H01S5/34326 ,  H01S5/3436

    Abstract: A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well layers and the barrier layer being alternately stacked; a pair of first AlGaInP layers that has substantially zero strain against the GaAs, and is provided so that the first AlGaInP layers contact upper and lower surfaces of the multiple quantum well active layer respectively; and a pair of second AlGaInP layers that has a compressive strain against the GaAs, and is provided so that the second AlGaInP layers contact the pair of first AlGaInP layers respectively.

    Abstract translation: 半导体激光器包括：形成在由GaAs构成的半导体衬底上的多量子阱有源层，并且包括具有对GaAs的拉伸应变的GaInAsP的阱层和具有对GaAs的基本零应变的AlGaInP的势垒层 阱层和阻挡层交替堆叠; 一对对GaAs具有基本零应变的第一AlGaInP层，并且被设置成使得第一AlGaInP层分别接触多量子阱活性层的上表面和下表面; 以及一对具有针对GaAs的压缩应变的第二AlGaInP层，并且被设置成使得第二AlGaInP层分别与一对第一AlGaInP层接触。

    SURFACE EMITTING LASER DEVICE
    58.
    发明申请
    SURFACE EMITTING LASER DEVICE 有权
    表面发射激光器件

    公开(公告)号：US20100008674A1

    公开(公告)日：2010-01-14

    申请号：US12500757

    申请日：2009-07-10

    Applicant: Hitoshi Shimizu ,  Takeo Kageyama

    Inventor： Hitoshi Shimizu ,  Takeo Kageyama

    IPC: H04B10/00

    CPC classification number: H01S5/18311 ,  B82Y20/00 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/3201 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173

    Abstract: To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.

    Abstract translation: 提供一种包括基板的表面发射激光器件; 布置在所述基板上的光学谐振器，所述光学谐振器包括下部多层反射器和上部多层反射器; 布置在所述谐振器中的应变有源层，所述应变有源层具有由量子阱层和阻挡层形成的多量子阱结构; 以及电流限制层，其布置在所述应变有源层的上侧，所述电流限制层包括选择性氧化部分，其中所述电流限制层布置在所述选择性氧化部分中的应变影响所述应变有源层的位置。

    Semiconductor light emitting device
    59.
    发明申请
    Semiconductor light emitting device 审中-公开
    半导体发光器件

    公开(公告)号：US20090238227A1

    公开(公告)日：2009-09-24

    申请号：US12379946

    申请日：2009-03-04

    Applicant: Masashi Kubota ,  Kuniyoshi Okamoto ,  Taketoshi Tanaka ,  Yoshinori Tanaka

    Inventor： Masashi Kubota ,  Kuniyoshi Okamoto ,  Taketoshi Tanaka ,  Yoshinori Tanaka

    IPC: H01S5/00

    CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0283 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3406

    Abstract: A semiconductor light emitting device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, and has a quantum well layer containing In in a light emitting layer. A strain compensation layer made of a group III nitride semiconductor containing Al and having a lattice constant smaller than the lattice constant of the quantum well layer in a strain-free state is interposed in the light emitting layer of a quantum well structure having the quantum well layer and a barrier layer or in an adjacent layer adjacent to the light emitting layer.

    Abstract translation: 半导体发光器件由具有由非极性平面或半极性面限定的主要生长表面的III族氮化物半导体制成，并且在发光层中具有含有In的量子阱层。 在具有量子阱结构的量子阱结构的发光层中插入由含有Al并且具有比无应变状态的量子阱层的晶格常数小的晶格常数的III族氮化物半导体构成的应变补偿层 层和阻挡层，或者在与发光层相邻的相邻层中。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    60.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20090154515A1

    公开(公告)日：2009-06-18

    申请号：US12329738

    申请日：2008-12-08

    Applicant: Hideki ASANO

    Inventor： Hideki ASANO

    IPC: H01S5/10

    CPC classification number: H01S5/227 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/1064 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34306

    Abstract: In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.

    Abstract translation: 在具有导电半导体衬底的半导体发光器件中，至少以下层按下列顺序堆叠在其上：第一覆盖层; 活性层，其包含相对于导电性半导体基板具有不小于1％的压缩应变量的至少一个高应变量子阱层; 并且还提供了第二包覆层，邻近形成在有源层上并且包括具有不大于有源层的应变量的压缩应变量的层的应变缓冲层。

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