公开(公告)号：US11785852B2

公开(公告)日：2023-10-10

申请号：US17979783

申请日：2022-11-03

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

发明人： You Qian ,  Joan Josep Giner De Haro ,  Rakesh Kumar

IPC分类号： H10N30/067 ,  H10N30/073 ,  H04R17/02 ,  H10N30/08 ,  H10N30/87 ,  H10N30/00 ,  H10N30/06

CPC分类号： H10N30/067 ,  H04R17/02 ,  H10N30/06 ,  H10N30/073 ,  H10N30/08 ,  H10N30/1051 ,  H10N30/872 ,  B81B2201/0257 ,  B81C2201/013 ,  B81C2201/016 ,  B81C2201/019 ,  B81C2201/0167

摘要： A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

公开(公告)号：US20230275559A1

公开(公告)日：2023-08-31

申请号：US18302440

申请日：2023-04-18

申请人： Soitec

发明人： Arnaud Castex ,  Daniel Delprat ,  Bernard Aspar ,  Ionut Radu

IPC分类号： H03H9/02 ,  H03H3/04 ,  H10N30/072 ,  H10N30/073 ,  H10N30/00 ,  H10N30/853 ,  H03H3/10

CPC分类号： H03H9/02834 ,  H03H9/02574 ,  H03H3/04 ,  H10N30/072 ,  H10N30/073 ,  H10N30/1051 ,  H10N30/8542 ,  H03H3/10 ,  Y10T29/42 ,  H10N30/082

摘要： The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

公开(公告)号：US11744158B2

公开(公告)日：2023-08-29

申请号：US17016941

申请日：2020-09-10

申请人： Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V. ,  Christian-Albrechts-Universitaet zu Kiel

发明人： Bernhard Wagner ,  Fabian Lofink ,  Dirk Kaden ,  Simon Fichtner

IPC分类号： H01L41/187 ,  H10N30/853 ,  B81B7/02 ,  H10N30/045 ,  H10N30/50 ,  H10N30/00 ,  H10N30/20

CPC分类号： H10N30/853 ,  B81B7/02 ,  H10N30/045 ,  H10N30/1051 ,  H10N30/2042 ,  H10N30/50 ,  B81B2201/03

摘要： A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

公开(公告)号：US11711066B2

公开(公告)日：2023-07-25

申请号：US16655304

申请日：2019-10-17

申请人： Fraunhofer Gesellschaft Zur Förderung Der Angewandten Forschung E.V.

发明人： Vadim Lebedev

IPC分类号： H03H9/17 ,  H03H9/05 ,  H03H3/007 ,  C23C28/04 ,  H03H9/13 ,  H10N30/074 ,  H10N30/00 ,  C23C16/01 ,  C23C16/27

CPC分类号： H03H9/17 ,  C23C28/04 ,  H03H3/007 ,  H03H9/05 ,  H03H9/13 ,  H10N30/074 ,  H10N30/1051 ,  C23C16/01 ,  C23C16/27

摘要： The invention relates to a method for manufacturing an electroacoustic resonator comprising the steps of: Providing a first substrate having a first side and an opposite second side; depositing a diamond layer having a first side and an opposite second side on said first substrate, wherein the second side of the diamond layer is in contact with said first side of the first substrate; removing the first substrate; forming a piezoelectric layer on the second side of the diamond layer; applying a second substrate to the first side of the diamond layer.