公开(公告)号：US20020134302A1

公开(公告)日：2002-09-26

申请号：US09815508

申请日：2001-03-23

发明人： Lee W. Ferry ,  Richard G. Schrenker ,  Mohsen Banan

IPC分类号： C30B035/00 ,  C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/14 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A heat shield assembly for use in a crystal puller has an outer reflector interposed between the ingot and the crucible as the ingot is pulled from the molten source material. A cooling shield is interposed between the ingot and the outer reflector whereby the cooling shield is exposed to heat radiated from the ingot for increasing the rate at which the ingot is cooled, thereby increasing the axial temperature gradient of the ingot. In a further embodiment, an inner shield panel is disposed generally intermediate the cooling shield and the ingot in radially spaced relationship with the cooling shield and is constructed of a material substantially transparent to radiant heat from the ingot.

摘要翻译： 在晶体拉拔器中使用的隔热罩组件在铸锭从熔融源材料中拉出时，具有插入锭和坩埚之间的外部反射器。 在铸块和外部反射器之间插入冷却挡板，由此冷却屏蔽体暴露于从铸块辐射的热量，以提高铸锭的冷却速率，从而增加钢锭的轴向温度梯度。 在另一个实施例中，内屏蔽板通常设置在冷却屏蔽件和铸块之间，与冷却屏蔽件呈径向间隔开的关系，并且由对来自铸锭的辐射热基本上透明的材料构成。

公开(公告)号：US20020124795A1

公开(公告)日：2002-09-12

申请号：US10095853

申请日：2002-03-11

发明人： Winfried Schulmann ,  Helmut Kaiser

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

CPC分类号： C30B15/32 ,  C30B15/30 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The invention relates to a method and to a device for supporting a crystal ingot while pulling a single crystal, in particular such a crystal composed of silicon, according to the Czochralski method. To this end, a crystal support is provided which engages with a specialized bead, which is formed on the neck of the single crystal ingot and which has the shape of a bicone, by means of bearings in a housing. A support of the crystal ingot is thus achieved which may be disengaged at any time, and which has no disruptive effects on crystal growth and which acts independently of the length of the grown crystal. The bearings are moved into the support position on the bicone by a central pulling element which can be independently displaced relative to a second pulling element.

摘要翻译： 本发明涉及一种根据切克劳斯基法（Czochralski）方法提取单晶体，特别是由硅构成的晶体的方法和装置。 为此，提供了一种晶体支撑件，其通过壳体中的轴承与形成在单晶锭的颈部上并具有二甲基硅酮形状的专门化珠接合。 因此实现了晶粒的支撑，其可以在任何时间脱离，并且其对晶体生长没有破坏性影响，并且独立于生长晶体的长度起作用。 轴承通过中央牵引元件移动到二甲基硅酮上的支撑位置，中心牵引元件可相对于第二牵引元件独立地移位。

公开(公告)号：US5997635A

公开(公告)日：1999-12-07

申请号：US10626

申请日：1998-01-22

申请人： Toshimichi Kubota ,  Toshiro Kotooka ,  Makoto Kamogawa

发明人： Toshimichi Kubota ,  Toshiro Kotooka ,  Makoto Kamogawa

IPC分类号： C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/208 ,  C30B15/18

CPC分类号： C30B15/14 ,  Y10T117/1004 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： An apparatus and a method for fabricating a single-crystal semiconductor by means of CZ method are provided for improving the quality control through the modification of thermal cycle of a pulled single-crystal semiconductor. The apparatus includes a ring after heater which is capable of elevation. The method decreases a temperature gradient to smaller than 20.degree. C./cm, and preferably under 15.degree. C./cm, when the pulled single-crystal semiconductor is cooled from 1200.degree. C. to 1000.degree. C. The after heater therefore heats the single-crystal semiconductor where there is a temperature of 100-300.degree. C. lower than the range of 1200-1000.degree. C. A thermal shelter is provided to retain a temperature gradient of larger than 20.degree. C./cm when the single-crystal semiconductor is within the temperature range between the melting point and 1250.degree. C. The after heater and the shelter can be raised to an upper portion when polysilicon blocks are charged and a twisting step is carried out.

摘要翻译： 提供了一种通过CZ方法制造单晶半导体的装置和方法，用于通过改变拉制单晶半导体的热循环来改善质量控制。 该装置包括能够升高的加热器后环。 当将拉制的单晶半导体从1200℃冷却至1000℃时，该方法将温度梯度降低到小于20℃/ cm，优选在15℃/ cm以下。因此加热器因此加热 单晶半导体，其温度为100-300℃，低于1200-1000℃的范围。提供热保护层以保持大于20℃/ cm的温度梯度，当单个 晶体半导体在熔点和1250℃之间的温度范围内。当多晶硅块被充电并且进行扭转步骤时，后加热器和遮蔽物可以升高到上部。

公开(公告)号：US5925147A

公开(公告)日：1999-07-20

申请号：US769528

申请日：1996-12-19

申请人： Makoto Ito

发明人： Makoto Ito

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B27/02 ,  C30B29/06 ,  H01L21/208 ,  C30B15/10

CPC分类号： C30B15/14 ,  C30B15/00 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).

摘要翻译： 已经提出了生产单晶的方法，其能够提取和生长单晶，而不会精确控制晶体中的氧浓度，并且具有优异的后续制备的栅极氧化物膜的介电强度。 根据本发明的单晶的制造方法的特征在于，一旦分成外部和内部的耐热和隔热部件（7）的惰性气体流（33和32）的汇合。

公开(公告)号：US5917103A

公开(公告)日：1999-06-29

申请号：US653131

申请日：1996-05-24

申请人： Hiroyuki Watanabe ,  Tatsuhiro Sato ,  Hiroshi Matsui

发明人： Hiroyuki Watanabe ,  Tatsuhiro Sato ,  Hiroshi Matsui

IPC分类号： C03B23/20 ,  C03B19/04 ,  C03B19/09 ,  C03B20/00 ,  C30B15/12

CPC分类号： C03B19/095 ,  C03B23/20 ,  C30B15/12 ,  Y10S65/08 ,  Y10T117/1052

摘要： Quartz powder is fed into a rotating mold to form a crucible-like quartz powder layer body with the help of centrifugal force in the mold. The layer is melted by heating through the inner surface with an arc discharge to manufacture an outer crucible member. A hollow cylindrical inner crucible member having a beveled lower edge is welded to the outer crucible member while a temperature of the inner surface portion of the outer crucible member remains at 1400.degree. C. or higher by a remaining heat.

摘要翻译： 在模具中借助于离心力将石英粉进料到旋转模具中以形成坩埚状石英粉体层体。 该层通过电弧放电通过内表面加热熔化，以制造外坩埚构件。 将外坩埚部件的内表面部分的温度通过余热保持在1400℃以上的状态下，将具有倾斜下边缘的中空圆柱形内坩埚部件焊接到外坩埚部件。

公开(公告)号：US5324488A

公开(公告)日：1994-06-28

申请号：US73351

申请日：1993-06-07

申请人： Herbert Klingshirn ,  Reinhard Lang

发明人： Herbert Klingshirn ,  Reinhard Lang

IPC分类号： C30B15/02 ,  C30B15/04 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208 ,  B01D9/00

CPC分类号： C30B15/02 ,  C30B15/04 ,  Y10T117/1052 ,  Y10T117/1056

摘要： In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According to the invention, the known disadvantages of thermal disturbances and the introduction of impurities and particles are overcome by a recharging system with a gas-tight seal, comprising additional crucible, stock container for semiconductor material and dopant having the appropriate feedlines and an exhaust gas line. In addition, the process makes possible a regulatable and separate recharging of dopant via the additional crucible.

摘要翻译： 在Czochralski坩埚中拉晶晶锭，尤其是具有特别大的晶体直径的晶锭，通过连续添加固体或液体补充材料，坩埚的填充程度在拉拔过程中保持大致恒定。 根据本发明，通过具有气密密封的再充电系统克服了热扰动和引入杂质和颗粒的已知缺点，其包括另外的坩埚，用于半导体材料的储料容器和具有适当馈线的掺杂剂和排气 线。 此外，该方法可以通过另外的坩埚对掺杂剂进行可调节和分离的再充电。

公开(公告)号：US5143704A

公开(公告)日：1992-09-01

申请号：US722259

申请日：1991-06-27

申请人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

发明人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

IPC分类号： C30B15/12 ,  C30B15/14

CPC分类号： C30B15/14 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a silicon single crystal manufacturing apparatus of the type which continuously feeds starting material, a metallic heat keeping plate is arranged to cover a partition member dividing molten silicon into a single crystal growing section and a material melting section within a quartz crucible and an upper side of the material melting section. The metallic heat keeping plate is provided for the purpose of preventing the occurrence of solidification of the molten silicon on the inner side of the partition member and preventing excessive cooling of a silicon single crystal. The metallic heat keeping plate has a thickness of 3 mm or less and its material is tantalum or molybdenum. Further, the heat keeping plate includes a straight body portion formed with a plurality of openings for adjusting the temperature of the single crystal.

摘要翻译： 在连续供给原料的硅单晶制造装置中，金属保温板被配置为覆盖将熔融硅分割成单晶生长部分的分隔构件和石英坩埚内的材料熔化部分和上侧 的材料熔化部分。 金属保温板是为了防止在分隔件的内侧发生熔融硅的凝固而防止硅单晶的过度冷却。 金属保温板的厚度为3mm以下，其材料为钽或钼。 此外，保温板包括形成有用于调节单晶温度的多个开口的直体部。

公开(公告)号：US5139750A

公开(公告)日：1992-08-18

申请号：US690920

申请日：1991-06-14

申请人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

发明人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.

公开(公告)号：US5098675A

公开(公告)日：1992-03-24

申请号：US464957

申请日：1990-01-16

申请人： Shuitsu Matsuo ,  Kazuo Ito ,  Masayuki Saito ,  Yoshihisa Wada ,  Yukifumi Sakai

发明人： Shuitsu Matsuo ,  Kazuo Ito ,  Masayuki Saito ,  Yoshihisa Wada ,  Yukifumi Sakai

IPC分类号： C30B15/10 ,  C30B15/14

CPC分类号： C30B15/10 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal pull-up apparatus includes a crucible for containing a molten silicon material, an annular heater disposed so as to surround the crucible for heating the silicon material in the crucible, and a plurality of plate-like members made of heat insulation material and disposed so as to surround the heater, each of the plate-like members has an arc-shaped cross section not less than a two-third circle and is connected with each other at respective side edges thereof such that the plurality of the plate-like members are assembled into a shape of a cylinder having wave-like circumferential side walls.

摘要翻译： 硅单晶上拉装置包括用于容纳熔融硅材料的坩埚，设置成围绕用于加热坩埚中的硅材料的坩埚的环形加热器，以及由绝热材料制成的多个板状部件 并且设置成围绕加热器，每个板状构件具有不小于二分之三圆的弧形横截面，并且在其各自的侧边缘处彼此连接，使得多个板状构件 类似的构件被组装成具有波浪形周向侧壁的圆柱体的形状。

公开(公告)号：US5021224A

公开(公告)日：1991-06-04

申请号：US864982

申请日：1986-05-20

申请人： Kazuo Nakajima

发明人： Kazuo Nakajima

IPC分类号： C30B17/00 ,  C30B15/02 ,  C30B15/18 ,  C30B19/10 ,  C30B29/60

CPC分类号： C30B19/10 ,  C30B15/02 ,  C30B15/18 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.