公开(公告)号：US11566150B2

公开(公告)日：2023-01-31

申请号：US16497512

申请日：2017-03-27

申请人： HITACHI CHEMICAL COMPANY, LTD.

发明人： Tomohiro Iwano

IPC分类号： C09G1/02 ,  H01L21/321 ,  C01F17/235

摘要： A slurry containing abrasive grains and a liquid medium, the abrasive grains including first particles and second particles being in contact with the first particles, the first particles containing ceria, the first particles having a negative zeta potential, the second particles containing a hydroxide of a tetravalent metal element, and the second particles having a positive zeta potential.

公开(公告)号：US20230027829A1

公开(公告)日：2023-01-26

申请号：US17783559

申请日：2020-12-03

申请人： ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD

发明人： Xiaoming Ren ,  Changzheng Jia ,  Shoutian Li

IPC分类号： C09G1/02

摘要： Disclosed is a chemical mechanical polishing solution containing cerium oxide, polyacrylic acid, polyether amine and water. In this invention polyether amine can serve as an additive to reduce the dishing amount of patterned wafer by negatively charged cerium oxide, and improve the efficiency of planarization.

公开(公告)号：US20230016801A1

公开(公告)日：2023-01-19

申请号：US17848193

申请日：2022-06-23

申请人： Fujimi Incorporated

发明人： Shogo Tsubota ,  Masaaki Ito ,  Keiji Ashitaka ,  Jun Shinoda ,  Yusuke Kawasaki

IPC分类号： C09G1/02 ,  C09C1/30

摘要： The surface-modified colloidal silica according to an aspect of the present invention contains colloidal silica, and a surface-modifying group for modifying a surface of the colloidal silica, which has a polyoxyalkylene chain having a weight average molecular weight of 20,000 or more.

公开(公告)号：US20230014626A1

公开(公告)日：2023-01-19

申请号：US17901412

申请日：2022-09-01

申请人： FUJIMI INCORPORATED

发明人： Ryota MAE

IPC分类号： C09G1/02 ,  H01L21/3105 ,  B24B7/22 ,  C09K3/14

摘要： A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

公开(公告)号：US20230002641A1

公开(公告)日：2023-01-05

申请号：US17846929

申请日：2022-06-22

申请人： ENTEGRIS, INC.

发明人： Rajiv K. Singh ,  Sunny De ,  Akshay Rajopadhye ,  Aditya D. Verma

IPC分类号： C09G1/02 ,  H01L21/321

摘要： The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.

公开(公告)号：US20220415669A1

公开(公告)日：2022-12-29

申请号：US17902507

申请日：2022-09-02

申请人： FUJIMI INCORPORATED

发明人： Yoshihiro IZAWA ,  Kenta IDE

IPC分类号： H01L21/321 ,  C09G1/02 ,  C09G1/16 ,  H01L21/3105 ,  C09K3/14

摘要： A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

公开(公告)号：US20220396715A1

公开(公告)日：2022-12-15

申请号：US17840448

申请日：2022-06-14

申请人： ENTEGRIS, INC.

发明人： Rajiv K. Singh ,  Sunny De

IPC分类号： C09G1/02 ,  B24B37/04

摘要： The invention provides improved slurries for the polishing of hard materials such as those having a Mohs hardness of greater than about 6. Exemplary hard surfaces include sapphire, silicon carbide, silicon nitride, and gallium nitride, and diamond. In the compositions and method of the invention, novel compositions comprising a unique combination of additives which surprisingly were found to uniformly disperse diamond particles having a wide range of particle size in a slurry. In the method of the invention, the generally alkaline slurry compositions of the invention are capable of utilizing diamond particle sizes of greater than 40 microns while effecting good removal rates. In such cases, when utilized with a suitable pad, rapid and planar grinding of silicon carbide, silicon nitride, sapphire, gallium nitride, and diamond is possible, with uniform surface damage.

公开(公告)号：US11518911B2

公开(公告)日：2022-12-06

申请号：US16982940

申请日：2019-02-28

申请人： FUJIMI INCORPORATED

发明人： Yukinobu Yoshizaki ,  Yohei Takahashi ,  Yohei Nakata

IPC分类号： C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  B24B37/00 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768

摘要： The present invention provides, in polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, means that is capable of improving a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials.
The present invention relates to a polishing composition used for polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, the polishing composition containing: organic acid-immobilized silica; a dispersing medium; a selection ratio improver that improves a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials; and an acid, in which the selection ratio improver is organopolysiloxane having a hydrophilic group.

公开(公告)号：US20220372332A1

公开(公告)日：2022-11-24

申请号：US17754038

申请日：2020-09-22

申请人： Versum Materials US, LLC

发明人： LU GAN ,  JAMES ALLEN SCHLUETER ,  DNYANESH CHANDRAKANT TAMBOLI

IPC分类号： C09G1/02 ,  H01L21/768 ,  C09G1/04

摘要： Present invention provides Chemical Mechanical Planarization (CMP) polishing compositions for barrier layer applications, specifically for improving With-In Die Non-Uniformities (WID-NU). The CMP polishing compositions contain abrasive at a concentration equal and/or greater than (·) 2.0 wt. %; a planarization agent selected from the group consisting of ethylene oxide, propylene oxide, butylene oxide, polymers thereof, derivatives thereof, and combinations thereof, wherein the polymers have a molecular weight between 10 Dalton to 5 million Dalton, preferably 50 Dalton to 1 million Dalton; corrosion inhibitor; water soluble solvent; and optionally, rate boosting agent, pH adjusting agent, oxidizing agent, and chelator.

公开(公告)号：US20220372331A1

公开(公告)日：2022-11-24

申请号：US17732242

申请日：2022-04-28

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Naoki YARITA ,  Daijitsu HARADA ,  Harunobu MATSUI ,  Masaki TAKEUCHI

IPC分类号： C09G1/02 ,  C09K3/14

摘要： A polishing composition including a colloidal silica containing colloidal silica particles, a pH adjusting agent, and a chelating agent provides a substrate that has a surface having a high flatness, low defects and a low surface roughness with low cost and high productivity, and a substrate having high surface quality suitable as a substrate for mask blanks such as a glass substrate containing SiO2 as a main component, particularly, as a substrate for mask blanks used in EUVL.